BSS64 [ONSEMI]
NPN 通用放大器;
| 型号： | BSS64 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 通用放大器 放大器 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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BSS64
C
E
SOT-23
Mark: U3
B
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
80
120
V
V
5.0
V
Collector Current - Continuous
200
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BSS64
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 4.0 mA, IB = 0
I = 100 A, I = 0
80
120
5.0
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
µ
C
E
I = 100 A, I = 0
µ
E
C
VCB = 90 V, IE = 0
0.1
50
A
A
µ
µ
VCB = 90 V, I = 0, T = 150 C
°
E
A
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
200
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
I = 4.0 mA, I = 400
IC = 50 mA, IB = 15 mA
20
60
Collector-Emitter Saturation Voltage
0.15
0.2
1.2
V
V
V
A
µ
VCE(sat)
C
B
Base-Emitter Saturation Voltage
I = 4.0 mA, I = 400
A
µ
VBE(sat)
C
B
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10,
f = 35 MHz
MHz
pF
Output Capacitance
VCB = 10 V, f = 1.0 MHz
5.0
Cob
3
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
250
200
150
100
50
0.5
0.4
0.3
0.2
0.1
0
125 °C
25 °C
β = 10
25 °C
- 40 °C
125 °C
VCE = 5V
- 40 °C
0
1
10
100
200
0.1 0.2
0.5
1
2
5
10 20
50 100
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Base Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
1
0.8
0.6
0.4
0.2
0
β = 10
- 40 °C
0.8
25 °C
- 40 °C
25 °C
0.6
125 °C
125 °C
0.4
0.2
0
V
= 5V
CE
0.1
1
10
100 200
1
10
100
200
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Collector-Cutoff Current
vs. Ambient Temperature
50
10
260
VCB = 100V
I
= 1.0 mA
C
240
220
200
180
160
1
25
50
75
100
125
0.1
1
10
100
1000
TA - AMBIENT TEMPERATURE ( C)
°
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
Small Signal Current Gain
vs Collector Current
30
16
FREG = 20 MHz
VCE = 10V
f = 1.0 MHz
25
20
15
10
5
12
8
C
ib
4
C
cb
0
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
50
1
10
100
V
- COLLECTOR VOLTAGE (V)
CE
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
SOT-23
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
3
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failure to perform when properly used in accordance
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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