BTB12-600TW3G [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | BTB12-600TW3G |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTB12-600TW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 600 V
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• On-State Current Rating of 12 A RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 10 V/ꢀ s minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 1.75 A/ms minimum at 110°C
• These are Pb−Free Devices
TRIACS
12 AMPERES RMS
600 VOLTS
MT2
MT1
G
MARKING
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
DIAGRAM
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
J
V
V
DRM,
RRM
(T = −40 to 110°C, Sine Wave,
V
50 to 60 Hz, Gate Open)
BTB12−600TW3G
600
12
BTB12−6TWG
On-State RMS Current
I
A
A
T(RMS)
TO−220AB
CASE 221A
STYLE 4
AYWW
(Full Cycle Sine Wave, 60 Hz, T = 80°C)
C
1
2
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
126
3
TSM
T
= 25°C)
C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
66
A sec
Non−Repetitive Surge Peak Off−State
V
V
V
V
V
DSM/
RSM
DSM/ RSM
= Pb−Free Package
Voltage (T = 25°C, t = 10ms)
+100
J
Peak Gate Current (T = 110°C, t = 20 ꢀ s)
I
4.0
A
J
GM
Peak Gate Power
P
GM
20
W
(Pulse Width ≤ 1.0 ꢀ s, T = 80°C)
C
PIN ASSIGNMENT
Average Gate Power (T = 110°C)
P
1.0
W
°C
°C
J
G(AV)
1
2
3
4
Main Terminal 1
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +110
−40 to +150
J
Main Terminal 2
Gate
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Main Terminal 2
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
ORDERING INFORMATION
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Device
Package
Shipping
50 Units / Rail
BTB12−600TW3G TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
October, 2008 − Rev. 0
BTB12−600TW3/D
BTB12−600TW3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
R
R
1.8
60
°C/W
ꢁ
JC
ꢁ
JA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
/
mA
DRM
(V = Rated V
, V
; Gate Open)
T = 25°C
T = 110°C
J
I
−
−
−
−
0.005
1.0
D
DRM RRM
J
RRM
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I 17 A Peak)
Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ꢂ)
V
−
−
1.55
V
TM
=
TM
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
1.2
1.2
1.2
−
−
−
5.0
5.0
5.0
Holding Current
(V = 12 V, Gate Open, Initiating Current = 100 mA)
D
I
−
−
10
mA
mA
H
Latching Current (V = 12 V, I = 7.5 mA)
I
D
G
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
−
15
15
15
Gate Trigger Voltage (V = 12 V, R = 30 ꢂ)
V
V
V
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.5
0.5
−
−
−
1.3
1.3
1.3
Gate Non−Trigger Voltage (T = 110°C)
V
GD
J
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.2
0.2
0.2
−
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(dI/dt)
1.75
−
−
−
−
−
45
−
A/ms
A/ꢀ s
V/ꢀ s
c
(Gate Open, T = 110°C, No Snubber)
J
Critical Rate of Rise of On−State Current
dI/dt
(T = 110°C, f = 120 Hz, I = 2 x I , tr ≤ 100 ns)
J
G
GT
Critical Rate of Rise of Off-State Voltage
(V = 0.66 x V , Exponential Waveform, Gate Open, T = 125°C)
dV/dt
10
D
DRM
J
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
BTB12−600TW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
DRM
off state
TM
I
H
I
at V
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
BTB12−600TW3G
125
110
20
18
DC
180°
120°
120°, 90°, 60°, 30°
16
14
12
10
8
95
90°
180°
60°
6
80
65
30°
4
DC
2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
, RMS ON‐STATE CURRENT (AMP)
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
T(RMS)
Figure 1. Typical RMS Current Derating
Figure 2. On-State Power Dissipation
1
100
0.1
TYPICAL AT
T = 25°C
J
10
0.01
4
0.1
1
10
100
1000
1·10
t, TIME (ms)
Figure 4. Thermal Response
12
11
10
9
1
8
MT2 Positive
7
6
5
4
3
MT2 Negative
2
1
0
−40 −25 −10
5
20 35 50 65 80 95 110
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
T , JUNCTION TEMPERATURE (°C)
J
V , INSTANTANEOUS ON-STATE VOLTAGE (V)
T
Figure 5. Typical Hold Current Variation
Figure 3. On-State Characteristics
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4
BTB12−600TW3G
100
10
1
2
V
= 12 V
D
V
= 12 V
D
1.8
1.6
1.4
1.2
1
R = 30
ꢂ
L
R = 30
ꢂ
L
Q1
Q3
Q1
Q3
0.8
0.6
0.4
0.2
0
Q2
Q2
−40 −25 −10
5
20 35 50 65 80 95 110
−40 −25 −10
5
20 35 50 65 80 95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Gate Trigger Current Variation
Figure 7. Typical Gate Trigger Voltage Variation
100
10
1
5000
V
= 12 V
D
V = 600 Vpk
D
R = 30
ꢂ
L
T = 110°C
J
4K
3K
2K
1K
0
Q2
Q1
Q3
10
100
1000
−40 −25 −10
5
20 35 50 65 80 95 110
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Typical Latching Current Variation
Figure 9. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
-
TRIGGER
200 V
+
CHARGE
MT2
1N914
51
ꢂ
MT1
NON‐POLAR
C
G
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
BTB12−600TW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
J
L
V
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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BTB12−600TW3/D
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