BTB16-700BW3G [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | BTB16-700BW3G |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTB16-600BW3G,
BTB16-700BW3G,
BTB16-800BW3G
Triacs
Silicon Bidirectional Thyristors
http://onsemi.com
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 16 A RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1500 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 7.5 A/ms minimum at 125°C
• These are Pb−Free Devices
MT2
MT1
G
MARKING
DIAGRAM
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
BTB16−xBWG
TO−220AB
CASE 221A
STYLE 4
Rating
Symbol
Value
Unit
AYWW
1
2
Peak Repetitive Off−State Voltage (Note 1)
J
V
V
DRM,
RRM
3
(T = −40 to 125°C, Sine Wave,
V
50 to 60 Hz, Gate Open)
x
A
Y
WW
G
= 6, 7 or 8
BTB16−600BW3G
600
700
800
= Assembly Location
= Year
BTB16−700BW3G
BTB16−800BW3G
= Work Week
= Pb−Free Package
On-State RMS Current
I
16
A
A
T(RMS)
(Full Cycle Sine Wave, 60 Hz, T = 80°C)
C
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
C
I
170
TSM
PIN ASSIGNMENT
T
= 25°C)
1
2
3
4
Main Terminal 1
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
120
A sec
Main Terminal 2
Gate
Non−Repetitive Surge Peak Off−State
V
V
V
V
DSM/
RSM
DSM/ RSM
Voltage (T = 25°C, t = 8.3 ms)
V
+100
J
Main Terminal 2
Peak Gate Current (T = 125°C, t ≤ 20 ms)
I
4.0
A
J
GM
Average Gate Power (T = 125°C)
P
1.0
W
°C
°C
J
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
T
J
−40 to +125
−40 to +150
ORDERING INFORMATION
T
stg
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BTB16−600BW3G TO−220AB
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
BTB16−700BW3G TO−220AB
(Pb−Free)
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
BTB16−800BW3G TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
May, 2009 − Rev. 2
BTB16−600BW3/D
BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
R
R
1.9
60
°C/W
q
JC
q
JA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
/
mA
DRM
(V = Rated V
, V
RRM
; Gate Open)
T = 25°C
T = 125°C
J
I
−
−
−
−
0.005
2.0
D
DRM
J
RRM
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I 22.5 A Peak)
Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 W)
V
−
−
1.55
V
TM
=
TM
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
2.5
2.5
2.5
−
−
−
50
50
50
Holding Current
(V = 12 V, Gate Open, Initiating Current = 150 mA)
D
I
−
−
60
mA
mA
H
Latching Current (V = 12 V, I = 50 mA)
I
D
G
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
−
70
90
70
Gate Trigger Voltage (V = 12 V, R = 30 W)
V
V
V
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.5
0.5
−
−
−
1.7
1.1
1.1
Gate Non−Trigger Voltage (T = 125°C)
V
GD
J
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.2
0.2
0.2
−
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(dI/dt)
dI/dt
7.5
−
−
−
−
−
50
−
A/ms
A/ms
V/ms
c
(Gate Open, T = 125°C, No Snubber)
J
Critical Rate of Rise of On−State Current
(T = 125°C, f = 120 Hz, I = 2 x I , tr ≤ 100 ns)
J
G
GT
Critical Rate of Rise of Off-State Voltage
(V = 0.66 x V , Exponential Waveform, Gate Open, T = 125°C)
dV/dt
1500
D
DRM
J
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
DRM
off state
TM
I
H
I
at V
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G
125
120
115
110
105
100
95
24
22
DC
180°
120°
20
30°
60°
90°
18
16
14
120°
12
180°
10
90
DC
8
6
4
2
0
90°
85
60°
80
30°
75
70
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON‐STATE CURRENT (AMP)
I , AVERAGE ON‐STATE CURRENT (AMP)
T(AV)
T(RMS)
Figure 1. Typical RMS Current Derating
Figure 2. On-State Power Dissipation
100
1
TYPICAL AT
MAXIMUM @ T = 125°C
J
T = 25°C
J
0.1
10
0.01
4
0.1
1
10
100
1000
1ꢀ·ꢀ10
t, TIME (ms)
Figure 4. Thermal Response
55
50
45
40
35
30
25
20
15
10
5
MAXIMUM @ T = 25°C
J
MT2 Positive
1
MT2 Negative
−40 −25 −10
5
20 35 50 65 80 95 110 125
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
T , JUNCTION TEMPERATURE (°C)
J
V , INSTANTANEOUS ON-STATE VOLTAGE (V)
T
Figure 3. On-State Characteristics
Figure 5. Typical Hold Current Variation
http://onsemi.com
4
BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G
1.8
100
10
1
V
= 12 V
V = 12 V
D
R = 30 W
L
D
1.6
1.4
1.2
1
R = 30 W
L
Q1
Q3
Q2
Q1
Q3
0.8
0.6
0.4
Q2
−40 −25 −10
5
20 35 50 65 80 95 110 125
−40 −25 −10
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Gate Trigger Current Variation
Figure 7. Typical Gate Trigger Voltage Variation
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
-
TRIGGER
CONTROL
200 V
+
CHARGE
MT2
1N914
51 W
MT1
G
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
5
BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
L
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
ON Semiconductor and
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BTB16−600BW3/D
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