BUL146F_技术文档

BUL146G, BUL146FG

SWITCHMODEt NPN

Bipolar Power Transistor

For Switching Power Supply Applications

The BUL146G / BUL146FG have an applications specific

state−of−the−art die designed for use in fluorescent electric lamp

ballasts to 130 W and in Switchmode Power supplies for all types of

electronic equipment.

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POWER TRANSISTOR

8.0 AMPERES

Features

• Improved Efficiency Due to Low Base Drive Requirements:

♦ High and Flat DC Current Gain

♦ Fast Switching

1000 VOLTS

45 and 125 WATTS

♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)

MARKING

DIAGRAMS

• Full Characterization at 125°C

• Two Packages Choices: Standard TO−220 or Isolated TO−220

• Parametric Distributions are Tight and Consistent Lot−to−Lot

• BUL146F, Case 221D, is UL Recognized to 3500 V

: File # E69369

• These Devices are Pb−Free and are RoHS Compliant*

RMS

BUL146G

AYWW

MAXIMUM RATINGS

TO−220AB

CASE 221A−09

STYLE 1

Rating

Symbol

Value

Unit

Vdc

Adc

1

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Emitter−Base Voltage

V

CEO

400

700

9.0

2

3

V

CES

V

EBO

Collector Current − Continuous

− Peak (Note 1)

I

6.0

15

C

I

CM

Base Current

− Continuous

− Peak (Note 1)

I

4.0

8.0

Adc

V

B

BM

BUL146FG

AYWW

RMS Isolation Voltage (Note 2)

BUL146F

4500

3500

1500

(for 1 sec, R.H. < 30%, T = 25_C)

V

ISOL1

V

ISOL2

V

ISOL3

C

TO−220 FULLPACK

CASE 221D

STYLE 2

UL RECOGNIZED

1

2

3

Total Device Dissipation @ T = 25_C

P

D

W

W/_C

C

BUL146

100

40

BUL146F

Derate above 25°C

BUL146

0.8

BUL146F

0.32

G

A

Y

WW

= Pb−Free Package

= Assembly Location

Operating and Storage Temperature

T , T

−65 to 150

_C

J

stg

= Year

= Work Week

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

R

_C/W

q

JC

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

BUL146

1.25

BUL146F

3.125

Thermal Resistance, Junction−to−Ambient

R

62.5

260

_C/W

_C

q

JA

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

T

L

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

2. Proper strike and creepage distance must be provided.

©

Semiconductor Components Industries, LLC, 2010

1

Publication Order Number:

April, 2010 − Rev. 9

BUL146/D

BUL146G, BUL146FG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

V

400

−

Vdc

mAdc

C

CEO(sus)

Collector Cutoff Current (V = Rated V

, I = 0)

I

CEO

−

100

CE

CEO

B

Collector Cutoff Current (V = Rated V

, V = 0)

I

−

100

500

100

CE

CES EB

CES

(T = 125°C)

C

Collector Cutoff Current (V = 500 V, V = 0)

CE

EB

Emitter Cutoff Current (V = 9.0 Vdc, I = 0)

I

−

100

mAdc

EB

C

EBO

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

V

−

0.82

0.93

1.1

Vdc

C

B

BE(sat)

Base−Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

1.25

C

B

Collector−Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

V

−

0.22

0.20

0.30

0.5

0.7

C

B

CE(sat)

(T = 125°C)

C

Collector−Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

C

B

(T = 125°C)

C

DC Current Gain (I = 0.5 Adc, V = 5.0 Vdc)

h

FE

14

−

34

−

C

CE

(T = 125°C)

30

20

13

12

20

C

DC Current Gain (I = 1.3 Adc, V = 1.0 Vdc)

12

8.0

7.0

10

−

C

CE

(T = 125°C)

C

−

DC Current Gain (I = 3.0 Adc, V = 1.0 Vdc)

−

C

CE

(T = 125°C)

C

−

DC Current Gain (I = 10 mAdc, V = 5.0 Vdc)

−

C

CE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)

f

−

14

95

−

MHz

pF

C

CE

T

Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)

C

OB

150

1500

CB

E

Input Capacitance (V = 8.0 V)

C

1000

pF

EB

IB

−

2.5

6.5

−

1.0 ms

3.0 ms

1.0 ms

3.0 ms

(I = 1.3 Adc

C

(T = 125°C)

C

I

B1

= 300 mAdc

Dynamic Saturation Voltage:

Determined 1.0 ms and

−

0.6

2.5

−

V

CC

= 300 V)

(T = 125°C)

C

3.0 ms respectively after

V

CE(dsat)

rising I reaches 90% of

B1

−

3.0

7.0

−

final I

(I = 3.0 Adc

C

B1

(T = 125°C)

C

(see Figure 18)

I

B1

= 0.6 Adc

−

0.75

1.4

−

V

CC

= 300 V)

(T = 125°C)

C

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2

BUL146G, BUL146FG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

C

Characteristic

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

Symbol

Min

Typ

Max

Unit

Turn−On Time

Turn−Off Time

Turn−On Time

Turn−Off Time

(I = 1.3 Adc, I = 0.13 Adc

t

on

t

off

t

on

t

off

−

100

90

200

ns

ms

ns

ms

C

B1

I

= 0.65 Adc, V = 300 V)

(T = 125°C)

−

B2

CC

C

−

1.35

1.90

2.5

−

(T = 125°C)

C

(I = 3.0 Adc, I = 0.6 Adc

−

90

100

150

−

C

B1

CC

I

= 1.5 Adc, V = 300 V)

(T = 125°C)

C

−

1.7

2.1

2.5

−

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 mH)

CC

clamp

Fall Time

(I = 1.3 Adc, I = 0.13 Adc

B2

t

fi

−

115

120

200

ns

ms

ns

ms

ns

ms

ns

C

B1

I

= 0.65 Adc)

(T = 125°C)

−

C

Storage Time

Crossover Time

Fall Time

t

si

−

1.35

1.75

2.5

−

(T = 125°C)

C

t

c

−

200

210

350

−

(T = 125°C)

C

(I = 3.0 Adc, I = 0.6 Adc

t

fi

−

85

100

150

−

C

B2

B1

I

= 1.5 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

Fall Time

t

si

−

1.75

2.25

2.5

−

(T = 125°C)

C

t

−

175

200

300

−

c

fi

(T = 125°C)

C

(I = 3.0 Adc, I = 0.6 Adc

t

80

−

210

180

−

C

B2

B1

I

= 0.6 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

t

si

2.6

−

4.5

3.8

−

(T = 125°C)

C

t

c

−

230

400

350

−

(T = 125°C)

C

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3

BUL146G, BUL146FG

TYPICAL STATIC CHARACTERISTICS

100

V

CE

= 5 V

T = 125°C

J

T = 125°C

J

V

CE

= 1 V

T = 25°C

J

T = 25°C

J

T = -ꢀ20°C

J

T = -ꢀ20°C

J

10

1

0.01

1

0.01

0.1

1

10

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

2

10

1

T = 25°C

J

I = 1 A

C

2 A

3 A

5 A

6 A

1

I /I = 10

C B

0.1

T = 25°C

T = 125°C

J

I /I = 5

C B

0

0.01

0.1

1

10

0.1

1

10

I , BASE CURRENT (mA)

B

I COLLECTOR CURRENT (AMPS)

C

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Voltage

1.2

10000

1000

T = 25°C

J

f = 1 MHz

1.1

1

C

ib

0.9

0.8

0.7

0.6

100

10

1

C

ob

T = 25°C

J

T = 125°C

J

I /I = 5

C B

I /I = 10

0.5

0.4

C B

0.01

0.1

1

10

1

10

100

1000

I , COLLECTOR CURRENT (AMPS)

C

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Base−Emitter Saturation Region

Figure 6. Capacitance

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4

BUL146G, BUL146FG

TYPICAL SWITCHING CHARACTERISTICS

(I = I /2 for all switching)

B2

C

1000

800

600

400

4000

3500

3000

2500

2000

1500

I

= I /2

B(off) C

= 300 V

I

= I /2

B(off) C

= 300 V

I /I = 5

C B

I /I = 10

T = 25°C

T = 125°C

J

V

CC

V

CC

C B

PW = 20 ms

I /I = 5

C B

T = 125°C

J

I /I = 10

C B

1000

200

0

T = 25°C

J

500

0

2

4

6

8

0

2

4

6

8

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 7. Resistive Switching, t_on

Figure 8. Resistive Switching, t_off

2500

2000

4000

3500

3000

2500

2000

1500

1000

500

T = 25°C

T = 125°C

J

I

= I /2

B(off) C

= 15 V

I

= I /2

B(off) C

= 15 V

J

V

CC

V = 300 V

V

CC

V = 300 V

I /I = 5

C B

Z

I = 3 A

C

L = 200 mH

C

L = 200 mH

C

1500

1000

500

0

I = 1.3 A

C

T = 25°C

T = 125°C

J

I /I = 10

C B

0

1

2

3

4

5

6

7

8

3

4

5

6

7

I COLLECTOR CURRENT (AMPS)

C

h , FORCED GAIN

FE

Figure 9. Inductive Storage Time, t_si

Figure 10. Inductive Storage Time, t_si(h_FE)

250

200

150

100

250

200

150

100

50

I

= I /2

B(off) C

= 15 V

t

c

V

CC

V = 300 V

Z

t

L = 200 mH

C

c

t

fi

t

fi

I

= I /2

B(off) C

= 15 V

50

0

V

CC

V = 300 V

T = 25°C

T = 125°C

J

T = 25°C

T = 125°C

J

Z

J

L = 200 mH

C

J

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Inductive Switching, t_cand t_fi

I_C/I_B= 5

Figure 12. Inductive Switching, t_cand t_fi

I_C/I_B= 10

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5

BUL146G, BUL146FG

TYPICAL SWITCHING CHARACTERISTICS

(I = I /2 for all switching)

B2

C

250

200

150

130

120

110

100

90

I = 1.3 A

C

I = 1.3 A

C

I = 3 A

C

I

= I /2

B(off) C

= 15 V

V

CC

V = 300 V

I = 3 A

C

Z

80

I

= I /2

B(off) C

= 15 V

L = 200 mH

C

100

50

V

CC

V = 300 V

T = 25°C

T = 125°C

70

60

T = 25°C

T = 125°C

J

Z

J

L = 200 mH

C

J

3

4

5

6

7

8

9

10 11 12 13 14 15

3

4

5

6

7

8

9

10 11 12 13 14 15

h

FE

, FORCED GAIN

h

FE

, FORCED GAIN

Figure 14. Inductive Cross−Over Time

Figure 13. Inductive Fall Time

GUARANTEED SAFE OPERATING AREA INFORMATION

7

100

10

T

≤ 125°C

DC (BUL146)

5 ms

C

6

I /I ≥ 4

C B

1 ms

10 ms

1 ms

L = 500 mH

C

5

4

EXTENDED

SOA

1

3

2

V

BE(off)

0.1

-ꢀ5 V

1

0

0 V

-1, 5 V

600

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01

0

200

400

800

10

100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

V

CE

V

CE

Figure 16. Reverse Bias Switching Safe Operating Area

Figure 15. Forward Bias Safe Operating Area

There are two limitations on the power handling ability of a tran-

sistor: average junction temperature and second breakdown. Safe

operating area curves indicate I_C− V_CElimits of the transistor that

must be observed for reliable operation; i.e., the transistor must not

be subjected to greater dissipation than the curves indicate. The data

of Figure 15 is based on T_C= 25°C; T_J(pk)is variable depending on

power level. Second breakdown pulse limits are valid for duty

cycles to 10% but must be derated when T_C> 25°C. Second break-

down limitations do not derate the same as thermal limitations. Al-

lowable current at the voltages shown in Figure 15 may be found at

any case temperature by using the appropriate curve on Figure 17.

1,0

SECOND BREAKDOWN

DERATING

0,8

0,6

0,4

T

_J(pk)may be calculated from the data in Figure 20. At any case tem-

peratures, thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by second break-

down. For inductive loads, high voltage and current must be sus-

tained simultaneously during turn−off with the base−to−emitter

junction reverse−biased. The safe level is specified as a reverse−

biased safe operating area (Figure 16). This rating is verified under

clamped conditions so that the device is never subjected to an ava-

lanche mode.

THERMAL DERATING

0,2

0,0

20

40

60

80

100

120

140

160

T , CASE TEMPERATURE (°C)

C

Figure 17. Forward Bias Power Derating

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6

BUL146G, BUL146FG

10

5

4

V

CE

90% I

I

C

9

8

7

6

5

t

fi

3

dyn 1 ms

t

si

2

dyn 3 ms

1

t

c

10% I

C

V

10% V

CLAMP

0

CLAMP

-1

-2

-3

-4

-5

4

3

2

1

0

90% I

B

I

B

90% I 1

B

1 ms

3 ms

I

B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

TIME

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

+15 V

I PEAK

C

100 mF

1 mF

MTP8P10

MUR105

MJE210

100 W

3 W

150 W

3 W

V

CE

PEAK

V

CE

MTP8P10

MPF930

R

B1

I 1

B

I

MPF930

+10 V

out

I

B

A

I 2

B

50 W

B2

V(BR)CEO(sus)

L = 10 mH

INDUCTIVE SWITCHING

L = 200 mH

RB2 = 0

RBSOA

COMMON

MTP12N10

150 W

3 W

L = 500 mH

RB2 = 0

RB2 = ∞

500 mF

V

= 20 VOLTS

I (pk) = 100 mA

V

CC

= 15 VOLTS

V

CC

= 15 VOLTS

CC

RB1 SELECTED FOR

DESIRED I 1

RB1 SELECTED

FOR DESIRED I 1

C

1 mF

B

-V

off

Table 1. Inductive Load Switching Drive Circuit

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7

BUL146G, BUL146FG

TYPICAL THERMAL RESPONSE

1

D = 0.5

0.2

0.1

P

(pk)

0.1

R (t) = r(t) R

q q

JC JC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.05

0.02

t

1

t

2

T

- T = P

C

R (t)

q

JC

J(pk)

(pk)

SINGLE PULSE

DUTY CYCLE, D = t /t

1 2

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 20. Typical Thermal Response (Z_q_JC(t)) for BUL146

1.00

D = 0.5

0.2

P

(pk)

R

(t) = r(t) R

q

JC

q

JC

0.10

0.1

= 3.125°C/W MAX

q

JC

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t

0.05

0.02

t

1

t

2

T

- T = P

C

R (t)

q

JC

J(pk)

(pk)

DUTY CYCLE, D = t /t

SINGLE PULSE

1 2

0.01

0.10

1.00

10.00

100.00

1000

t, TIME (ms)

Figure 21. Typical Thermal Response for BUL146F

ORDERING INFORMATION

Device

Package

Shipping

BUL146G

TO−220AB

(Pb−Free)

50 Units / Rail

BUL146FG

TO−220 (Fullpack)

(Pb−Free)

50 Units / Rail

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8

BUL146G, BUL146FG

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

CLIP

0.099″ MIN

LEADS

HEATSINK

0.110″ MIN

Figure 22a. Screw or Clip Mounting

Position for Isolation Test Number 1

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

*Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**

4-40 SCREW

CLIP

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

HEATSINK

NUT

Figure 23a. Screw−Mounted

Figure 23b. Clip−Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a

.

screw torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain

a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in lbs will

.

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

.

Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the

package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom-

.

mend exceeding 10 in lbs of mounting torque under any mounting conditions.

**For more information about mounting power semiconductors see Application Note AN1040.

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9

BUL146G, BUL146FG

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

C

S

B

F

T

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

4.09

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

A

B

C

D

F

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.161

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

A

K

Q

Z

1

2

3

U

H

G

H

J

K

L

N

Q

R

S

T

L

R

J

V

G

U

V

Z

D

0.080

2.04

N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TO−220 FULLPAK

CASE 221D−03

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

SEATING

−T−

PLANE

−B−

C

F

S

Q

INCHES

DIM MIN MAX

MILLIMETERS

U

MIN

MAX

16.12

10.63

4.83

A

B

C

D

F

0.625

0.408

0.180

0.026

0.116

0.635 15.88

0.418 10.37

0.190

0.031

0.119

4.57

0.65

2.95

1

2 3

0.78

3.02

H

−Y−

G

H

J

0.100 BSC

2.54 BSC

K

0.125

0.018

0.530

0.048

0.135

0.025

3.18

0.45

3.43

0.63

K

L

0.540 13.47

1.23

13.73

1.36

5.08 BSC

0.053

G

N

L

J

N

Q

R

S

U

0.200 BSC

R

0.124

0.099

0.101

0.238

0.128

0.103

0.113

0.258

3.15

2.51

2.57

6.06

3.25

2.62

2.87

6.56

D 3 PL

M

STYLE 2:

PIN 1. BASE

0.25 (0.010)

B

Y

2. COLLECTOR

3. EMITTER

http://onsemi.com

10

BUL146G, BUL146FG

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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11


型号：	BUL146F
厂家：	ONSEMI
描述：	功率 8A 400V NPN 局域网开关晶体管功率双极晶体管
文件：	总11页 (文件大小：229K)
中文：	中文翻译
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