BUL44AJ_技术文档

BUL44G

SWITCHMODEt NPN

Bipolar Power Transistor

For Switching Power Supply Applications

The BUL44G have an applications specific state−of−the−art die

designed for use in 220 V line operated Switchmode Power supplies

and electronic light ballasts.

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POWER TRANSISTOR

2.0 AMPERES, 700 VOLTS,

40 AND 100 WATTS

Features

• Improved Efficiency Due to Low Base Drive Requirements:

High and Flat DC Current Gain h

Fast Switching

FE

No Coil Required in Base Circuit for Turn−Off (No Current Tail)

• Full Characterization at 125°C

• Tight Parametric Distributions are Consistent Lot−to−Lot

• These Devices are Pb−Free and are RoHS Compliant*

TO−220AB

CASE 221A−09

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

1

2

3

Collector−Emitter Sustaining Voltage

V

CEO

400

Vdc

Collector−Base Breakdown Voltage

Emitter−Base Voltage

V

700

9.0

Vdc

Adc

CES

EBO

V

MARKING DIAGRAM

Collector Current − Continuous

− Peak (Note 1)

I

C

2.0

5.0

I

CM

Base Current

− Continuous

− Peak (Note 1)

I

B

1.0

2.0

Adc

BM

BUL44G

AY WW

Total Device Dissipation @ T = 25_C

P

50

0.4

W

W/_C

C

D

Derate above 25°C

Operating and Storage Temperature

THERMAL CHARACTERISTICS

T , T

−65 to 150

_C

J

stg

BUL44 = Device Code

Characteristics

Symbol

Max

Unit

_C/W

_C

A

Y

= Assembly Location

= Year

Thermal Resistance, Junction−to−Case

R

q

JC

2.5

WW

G

= Work Week

= Pb−Free Package

Thermal Resistance, Junction−to−Ambient

R

q

JA

62.5

260

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

T

L

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

ORDERING INFORMATION

Device

Package

Shipping

50 Units / Rail

BUL44G

TO−220

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

©

Semiconductor Components Industries, LLC, 2010

1

Publication Order Number:

April, 2010 − Rev. 7

BUL44/D

BUL44G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

V

400

−

Vdc

mAdc

CEO(sus)

(I = 100 mA, L = 25 mH)

C

Collector Cutoff Current

I

−

100

CEO

(V = Rated V

, I = 0)

B

CE

CEO

Collector Cutoff Current (V = Rated V

,

I

−

100

500

100

CE

CES

V

= 0)

CE

(T = 125°C)

C

(T = 125°C)

C

EB

(V = 500 V, V = 0)

EB

Emitter Cutoff Current

(V = 9.0 Vdc, I = 0)

I

−

100

mAdc

EBO

EB

C

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

V

Vdc

BE(sat)

(I = 0.4 Adc, I = 40 mAdc)

−

0.85

0.92

1.1

C

B

(I = 1.0 Adc, I = 0.2 Adc)

1.25

C

B

Collector−Emitter Saturation Voltage

(I = 0.4 Adc, I = 40 mAdc)

V

CE(sat)

−

0.20

0.25

0.5

0.6

C

B

(T = 125°C)

C

(I = 1.0 Adc, I = 0.2 Adc)

C

B

(T = 125°C)

C

DC Current Gain

h

FE

−

(I = 0.2 Adc, V = 5.0 Vdc)

14

−

12

8.0

7.0

10

−

34

−

C

CE

(T = 125°C)

32

20

14

13

22

C

(I = 0.4 Adc, V = 1.0 Vdc)

C

−

CE

(T = 125°C)

C

−

(I = 1.0 Adc, V = 1.0 Vdc)

C

−

CE

(T = 125°C)

C

−

(I = 10 mAdc, V = 5.0 Vdc)

C

−

CE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

f

−

13

38

−

MHz

pF

T

(I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)

C

CE

Output Capacitance

C

OB

60

(V = 10 Vdc, I = 0, f = 1.0 MHz)

CB

E

Input Capacitance

C

380

600

pF

IB

(V = 8.0 V)

EB

−

2.5

2.7

−

1.0 ms

3.0 ms

1.0 ms

3.0 ms

(I = 0.4 Adc

(T = 125°C)

C

I

= 40 mAdc

B1

CC

Dynamic Saturation Voltage:

Determined 1.0 ms and

−

1.3

1.15

−

V

= 300 V)

(T = 125°C)

C

3.0 ms respectively after

V

Vdc

CE(dsat)

−

3.2

7.5

−

rising I reaches 90%

B1

(I = 1.0 Adc

(T = 125°C)

C

B1

of final I

B1

I

= 0.2 Adc

−

1.25

1.6

−

V

CC

= 300 V)

(T = 125°C)

C

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2

BUL44G

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

Turn−On Time

Turn−Off Time

Turn−On Time

Turn−Off Time

(I = 0.4 Adc, I = 40 mAdc

t

on

t

off

t

on

t

off

−

40

100

ns

ms

ns

ms

C

B1

I

= 0.2 Adc, V = 300 V)

(T = 125°C)

−

B2

CC

C

(I = 0.4 Adc, I = 40 mAdc

−

1.5

2.0

2.5

−

C

B2

B1

CC

I

= 0.2 Adc, V = 300 V)

(T = 125°C)

C

(I = 1.0 Adc, I = 0.2 Adc

−

85

150

−

C

B1

CC

I

= 0.5 Adc, V = 300 V)

(T = 125°C)

C

(I = 1.0 Adc, I = 0.2 Adc

−

1.75

2.10

2.5

−

C

B2

B1

CC

I

= 0.5 Adc, V = 300 V)

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 mH)

CC

clamp

Fall Time

(I = 0.4 Adc, I = 40 mAdc

B2

t

fi

−

125

120

200

ns

ms

ns

ms

ns

ms

ns

C

B1

I

= 0.2 Adc)

(T = 125°C)

C

−

Storage Time

Crossover Time

Fall Time

t

si

−

0.7

0.8

1.25

−

(T = 125°C)

C

t

−

110

200

−

c

fi

(T = 125°C)

C

(I = 1.0 Adc, I = 0.2 Adc

t

−

110

120

175

−

C

B2

B1

I

= 0.5 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

Fall Time

t

si

−

1.7

2.25

2.75

−

(T = 125°C)

C

t

c

−

180

210

300

−

(T = 125°C)

C

(I = 0.8 Adc, I = 160 mAdc

t

fi

70

−

180

170

−

C

B2

B1

I

= 160 mAdc)

(T = 125°C)

C

Storage Time

Crossover Time

t

si

2.6

−

4.2

3.8

−

(T = 125°C)

C

t

c

−

190

350

300

−

(T = 125°C)

C

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3

BUL44G

TYPICAL STATIC CHARACTERISTICS

100

V

CE

= 1 V

V

CE

= 5 V

T = 125°C

J

T = 125°C

J

T = 25°C

J

T = 25°C

J

T = -ꢀ20°C

J

10

1.0

0.01

0.1

1.0

10

0.01

0.1

1.0

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain at 1 Volt

Figure 2. DC Current Gain at 5 Volts

2.0

10

T = 25°C

J

I /I = 10

C B

1.0

I /I = 5

C B

1.0

0.1

2 A

1.5 A

1 A

T = 25°C

J

0.4 A

T = 125°C

J

I = 0.2 A

C

0

1.0

0.01

10

100

1000

0.1

1.0

10

I , BASE CURRENT (mA)

B

I , COLLECTOR CURRENT (AMPS)

C

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Voltage

1000

100

10

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

T = 25°C

C

IB

J

f = 1 MHz

C

OB

T = 25°C

J

T = 125°C

J

I /I = 5

C B

I /I = 10

C B

1.0

10

1.0

10

100

0.01

0.1

1.0

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 5. Base−Emitter Saturation Region

Figure 6. Capacitance

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4

BUL44G

TYPICAL SWITCHING CHARACTERISTICS

(I = I /2 for all switching)

B2

C

300

250

200

150

100

50

6.0

5.0

4.0

3.0

2.0

1.0

0

I

= I

B(off) C/2

= 300 V

I

= I

B(off) C/2

= 300 V

V

CC

I /I = 5

C B

CC

PW = 20 ms

I /I = 10

C B

T = 25°C

J

T = 125°C

J

I /I = 5

C B

T = 25°C

J

T = 125°C

J

I /I = 10

C B

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 7. Resistive Switching, t_on

Figure 8. Resistive Switching, t_off

2500

2.0

1.5

T = 25°C

T = 125°C

J

I

= I

B(off) C/2

= 15 V

I

= I

B(off) C/2

= 15 V

J

I /I = 5

C B

V

CC

2000

1500

1000

V = 300 V

Z

V = 300 V

Z

L = 200 mH

C

L = 200 mH

C

I = 1 A

C

1.0

500

0

T = 25°C

T = 125°C

J

I = 0.4 A

C

I /I = 10

C B

0.5

0.4

0.8

1.2

1.6

2.0

2.4

5.0 6.0 7.0 8.0 9.0

10

11

12

13

14

15

I , COLLECTOR CURRENT (AMPS)

C

h , FORCED GAIN

FE

Figure 9. Inductive Storage Time, t_si

Figure 10. Inductive Storage Time

250

200

150

100

200

150

100

50

I

= I

B(off) C/2

= 15 V

V

CC

V = 300 V

Z

t

c

L = 200 mH

C

t

c

t

fi

t

fi

I

= I

B(off) C/2

= 15 V

V

CC

50

0

V = 300 V

Z

T = 25°C

T = 125°C

J

T = 25°C

T = 125°C

J

L = 200 mH

C

J

0.4

0.8

1.2

1.6

2.0

2.4

0.4

0.8

1.2

1.6

2.0

2.4

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Inductive Switching,

t_cand t_fiI_C/I_B= 5

Figure 12. Inductive Switching,

t_cand t_fiI_C/I_B= 10

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5

BUL44G

TYPICAL SWITCHING CHARACTERISTICS

(I = I /2 for all switching)

B2

C

190

170

150

130

110

170

160

150

I

= I

B(off) C/2

= 15 V

I

= I

B(off) C/2

= 15 V

I = 1 A

C

V

CC

V = 300 V

Z

V = 300 V

Z

L = 200 mH

C

L = 200 mH

C

140

130

120

I = 0.4 A

C

I = 0.4 A

C

110

100

90

70

I = 1 A

C

T = 25°C

T = 125°C

J

T = 25°C

T = 125°C

J

90

80

50

5.0 6.0 7.0 8.0 9.0

10

11

12

13

14

15

5.0 6.0 7.0

8.0 9.0

10

11

12

13

14 15

h

FE

, FORCED GAIN

h

FE

, FORCED GAIN

Figure 14. Inductive Crossover Time

Figure 13. Inductive Fall Time

GUARANTEED SAFE OPERATING AREA INFORMATION

2.5

2.0

1.5

1.0

0.5

0

10

1.0

10ꢂms

1ꢂms

T

≤ 125°C

C

1ꢂms

DC (BUL44)

5ꢂms

GAIN ≥ 4

L = 500 mH

C

50ꢂms

Extended

SOA

-5 V

0.1

-1.5 V

0 V

0.01

10

100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0

100

200

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

300

400

500

600

700

1000

V

CE

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

1.0

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of figure 15 is

SECOND BREAK-

DOWN DERATING

0.8

0.6

0.4

based on T = 25°C; T

is variable depending on power

level. Second breakdown pulse limits are valid for duty cycles

C

J(PK)

to 10% but must be derated when T > 25°C. Second

C

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on figure

15 may be found at any case temperature by using the

THERMAL DERATING

appropriate curve on figure 17. T

may be calculated from

J(PK)

0.2

0

the data in figure 20. At any case temperatures, thermal

limitations will reduce the power than can be handled to

values less than the limitations imposed by second

breakdown. For inductive loads, high voltage and current

must be sustained simultaneously during turn−off with the

base−to−emitter junction reverse−biased. The safe level is

specified as a reverse−biased safe operating area (Figure 16).

This rating is verified under clamped conditions so that the

device is never subjected to an avalanche mode.

20

40

60

80

100

120

140

16

T , CASE TEMPERATURE (°C)

C

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I −V

C

CE

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6

BUL44G

10

5

4

V

CE

90% I

I

C

9

8

7

6

5

t

fi

3

dyn 1 ms

t

si

2

dyn 3 ms

1

t

c

10% I

C

V

10% V

CLAMP

0

CLAMP

-1

-2

-3

-4

-5

4

3

2

1

0

90% I

B

I

B

90% I 1

B

1 ms

3 ms

I

B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

TIME

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

+15 V

I PEAK

C

100 mF

1 mF

MTP8P10

MUR105

MJE210

100 W

3 W

150 W

3 W

V

CE

PEAK

V

CE

MTP8P10

MPF930

R

B1

I 1

B

I

MPF930

+10 V

out

I

B

A

I 2

B

50 W

B2

V(BR)CEO(sus)

L = 10 mH

INDUCTIVE SWITCHING

L = 200 mH

RB2 = 0

RBSOA

COMMON

MTP12N10

150 W

3 W

L = 500 mH

RB2 = 0

RB2 = ∞

500 mF

V

= 20 VOLTS

I (pk) = 100 mA

V

CC

= 15 VOLTS

V

CC

= 15 VOLTS

CC

RB1 SELECTED FOR

DESIRED I 1

RB1 SELECTED

FOR DESIRED I 1

C

1 mF

B

-V

off

Table 1. Inductive Load Switching Drive Circuit

TYPICAL THERMAL RESPONSE

1.0

0.5

0.2

0.01

0.1

0.05

R

= r(t) R

q

JC

q

JC(t)

P

(pk)

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t

0.02

t

1

SINGLE PULSE

T

- T = P

C

R

q

(pk) JC1

(t)

t

2

J(pk)

DUTY CYCLE, D = t /t

1 2

0.01

0.1

1.0

10

100

1000

t, TIME (ms)

Figure 20. Typical Thermal Response (Z_q_JC(t)) for BUL44

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7

BUL44G

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

C

S

B

F

T

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

4.09

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

A

B

C

D

F

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.161

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

A

K

Q

Z

1

2

3

U

H

G

H

J

K

L

N

Q

R

S

T

L

R

J

V

G

U

V

Z

D

0.080

2.04

N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BUL44/D

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8


型号：	BUL44AJ
厂家：	ONSEMI
描述：	2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN 局域网开关晶体管
文件：	总8页 (文件大小：180K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUL44AJ [ONSEMI]

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