BZX84B3V0LT3 [ONSEMI]
3V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3;型号: | BZX84B3V0LT3 |
厂家: | ONSEMI |
描述: | 3V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3 |
文件: | 总7页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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3
1
Cathode
Anode
Features
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Tight Tolerance Series Available (See Page 4)
• Pb−Free Packages are Available
MARKING
DIAGRAM
3
SOT−23
CASE 318
STYLE 8
xxx M G
G
1
2
1
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx
M
= Device Code
= Date Code*
= Pb−Free Package
G
(Note: Microdot may be in either location)
* Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
MAXIMUM RATINGS
†
Device
BZX84CxxxLT1
Package
Shipping
Rating
Symbol
Max
Unit
SOT−23
3000/Tape & Reel
3000/Tape & Reel
Total Power Dissipation on FR−5 Board,
(Note 1) @ T = 25°C
Derated above 25°C
P
D
225
1.8
556
mW
mW/°C
°C/W
A
BZX84CxxxLT1G SOT−23
(Pb−Free)
Thermal Resistance, Junction−to−Ambient
R
q
JA
BZX84CxxxLT3
SOT−23 10,000/Tape & Reel
Total Power Dissipation on Alumina
P
D
BZX84CxxxLT3G SOT−23 10,000/Tape & Reel
(Pb−Free)
Substrate, (Note 2) @ T = 25°C
300
2.4
417
mW
mW/°C
°C/W
A
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
BZX84BxxxLT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
Junction and Storage Temperature Range
T , T
−65 to
+150
°C
J
stg
BZX84BxxxLT1G
SOT−23
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
BZX84BxxxLT3
SOT−23 10,000/Tape & Reel
BZX84BxxxLT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
July, 2009 − Rev. 13
BZX84C2V4LT1/D
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
A
I
F
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
F
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
V
I
Z
ZT
Maximum Zener Impedance @ I
V
F
R
ZT
ZT
I
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
Zener Voltage Regulator
C
Max. Capacitance @ V = 0 and f = 1 MHz
R
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2
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
@ I
(Volts)
V
(V)
= 1 mA
V
(V)
= 20 mA
Max Reverse
Leakage
Current
q
VZ
Z1
Z2
Z3
= 5 mA
@ I
@ I
(mV/k)
@ I = 5 mA
ZT1
ZT1
ZT2
(Note 3)
ZT3
(Note 3)
Z
(W)
@ I
5 mA
Z
(W)
@ I
1 mA
Z
ZT3
(W)
@ I =
ZT3
(Note 3)
ZT1
ZT2
C (pF)
I
V
R
Volts
Device
=
=
@ V = 0
R
ZT1
ZT2
R
@
Min
Nom
2.4
2.7
3
Max
2.6
Min
1.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
Min
Max
3.2
Min
Max
0
mA
Device*
Marking
f = 1 MHz
20 mA
BZX84C2V4LT1, G
BZX84C2V7LT1, G
BZX84C3V0LT1, G
BZX84C3V3LT1, G
BZX84C3V6LT1, G
BZX84C3V9LT1, G
BZX84C4V3LT1, G
BZX84C4V7LT1, G
BZX84C5V1LT1, G
BZX84C5V6LT1, G
BZX84C6V2LT1, G
BZX84C6V8LT1, G
BZX84C7V5LT1, G
BZX84C8V2LT1, G
BZX84C9V1LT1, G
BZX84C10LT1, G
BZX84C11LT1, G
BZX84C12LT1, G
BZX84C13LT1, G
BZX84C15LT1, G
BZX84C16LT1, G
BZX84C18LT1, G
BZX84C20LT1, G
BZX84C22LT1, G
BZX84C24LT1, G
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
2.2
2.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
600
600
600
600
600
600
600
500
480
400
150
80
2.6
3
50
50
1
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
450
2.9
1.9
3.6
50
50
40
40
30
30
15
15
10
6
20
10
5
0
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
2.8
3.2
2.1
3.3
3.6
3.9
4.1
4.4
4.5
5
3.9
1
0
3.1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.5
2.3
4.2
1
0
3.4
3.8
2.7
4.5
5
1
0
3.7
4.1
2.9
4.7
3
1
−2.5
0
4
4.6
3.3
5.1
3
1
4.4
5
3.7
4.7
5.3
6
5.4
3
2
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Z2
4.8
5.4
4.2
5.9
2
2
Z3
5.2
6
4.8
5.2
5.8
6.4
7
6.3
1
2
Z4
5.8
6.6
5.6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
6.8
3
4
Z5
6.4
7.2
6.3
7.4
6
2
4
1.2
Z6
7
7.9
6.9
80
8
6
1
5
2.5
Z7
7.7
8.7
7.6
80
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
8.8
6
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
Z8
8.5
9.6
8.4
100
150
150
150
170
200
200
225
225
250
250
9.7
8
6
3.8
Z9
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
9.3
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
7
4.5
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
8
5.4
12
8
6.0
13
8
7.0
15
15.5
17
10.5
11.2
12.6
14
15.4
16.8
9.2
16
10.4
12.4
14.4
16.4
18.4
18
19
20
21.1
23.2
25.5
22
85
24
80
V
Below
= 0.1 m-
A
Max Reverse
Leakage
Current
q
VZ
(mV/k) Below
Z2
V
Below
= 2 mA
@ I
ZT2
V Below
Z3
Z1
Z
Z
Z
@ I
ZT1
@ I
ZT3
= 10 mA
ZT1
ZT2
ZT3
@ I
= 2 mA
ZT1
Below
Below
Below
C (pF)
I
V
R
Device
Marking
@ I
ZT1
=
@ I
0.5 mA
=
@ I
10 mA
=
@ V = 0
R
ZT4
ZT3
R
@
Min
Nom
Max
28.9
32
Min
Max
28.9
32
Min
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
(V)
18.9
21
Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
mA
Device
2 mA
f = 1 MHz
BZX84C27LT1, G
BZX84C30LT1, G
BZX84C33LT1, G
BZX84C36LT1, G
BZX84C39LT1, G
BZX84C43LT1, G
BZX84C47LT1, G
BZX84C51LT1, G
BZX84C56LT1, G
BZX84C62LT1, G
BZX84C68LT1, G
BZX84C75LT1, G
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
80
80
25
300
300
325
350
350
375
375
400
425
450
475
500
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
45
50
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
70
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
70
70
70
45
40
40
40
40
35
35
35
35
80
35
55
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
38
90
38
60
41
130
150
170
180
200
215
240
255
41
70
46
46
80
50
50
90
54
54
100
110
120
130
140
60
60
66
66
72
72
73.2
80.2
79
79
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
*
The “G” suffix indicates Pb−Free package available.
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3
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
Max Reverse
Leakage
Current
Z
ZT
(W) @
q
VZ
(mV/k)
@ I = 5 mA
I
ZT
= 5 mA
V
Z
(Volts) @ I
= 5 mA
ZT
C (pF)
I
V
R
(Note 4)
Max
80
(Note 4)
Nom
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
12
R
ZT
@ V =0,
Device
Marking
@
R
Min
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
11.8
14.7
15.7
17.6
21.6
23.5
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
12.2
15.3
16.3
18.4
22.4
24.5
mA
Volts
2
Min
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
f = 1 MHz
260
225
200
185
155
140
135
130
130
110
Device
BZX84B4V7LT1, G
T10
T11
T12
T13
T14
T15
T16
T17
T18
T22
T19
T20
T24
T25
3
2
1
3
2
1
−3.5
−2.7
−2
BZX84B5V1LT1, G
BZX84B5V6LT1, G
BZX84B6V2LT1, G
BZX84B6V8LT1, G
BZX84B7V5LT1, G
BZX84B8V2LT1, G
BZX84B9V1LT1, G
BZX84B12LT1, G
BZX84B15LT1, G
BZX84B16LT1, G
BZX84B18LT1, G
BZX84B22LT1, G
BZX84B24LT1, G
60
2
40
2
10
4
0.4
15
4
1.2
15
5
2.5
15
0.7
0.5
5
3.2
15
6
3.8
25
0.1
8
6
10
15
30
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
15.4
16.8
9.2
13
16
40
10.4
12.4
16.4
18.4
14
105
100
85
18
45
16
22
55
20
24
70
22
80
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
* The “G” suffix indicates Pb−Free package available.
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4
BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
C
TYPICAL T VALUES
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
-1
-ꢀ2
-ꢀ3
1
2
3
4
5
6
7
8
9
10
11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1
1000
100
10
T = 25°C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I
Z(AC)
f = 1 kHz
= 0.1 I
Z(DC)
I = 1 mA
Z
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
0.5
1
0.4
1
10
V , NOMINAL ZENER VOLTAGE
100
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+ꢀ25°C
-ꢀ55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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6
BZX84B4V7LT1, BZX84C2V4LT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
SEE VIEW C
Y14.5M, 1982.
3
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
e
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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