BZX84C36ET1G [ONSEMI]
Zener Voltage Regulators; 齐纳稳压器
| 型号： | BZX84C36ET1G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Voltage Regulators |
| 文件： | 总6页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
http://onsemi.com
Specification Features
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
SOT−23
CASE 318
STYLE 8
3
1
Cathode
Anode
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
MARKING DIAGRAM
Pb−Free Packages are Available*
xxx M G
Mechanical Characteristics
G
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
1
xxx
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
W
ORDERING INFORMATION
@ T 25C
L
†
Device
Package
Shipping
Total Power Dissipation on FR−5 Board,
P
D
(Note 2) @ T = 25C
225
1.8
556
mW
mW/C
C/W
A
BZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Derated above 25C
Tape & Reel
Thermal Resistance, Junction−to−Ambient
R
q
JA
SZBZX84CxxxET1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Total Power Dissipation on Alumina
P
D
Substrate, (Note 3) @ T = 25C
300
2.4
417
mW
mW/C
C/W
A
Derated above 25C
BZX84CxxxET3G
SOT−23
10,000 /
Tape & Reel
Thermal Resistance, Junction−to−Ambient
R
q
(Pb−Free)
JA
Junction and Storage Temperature Range
T , T
−65 to
+150
C
SZBZX84CxxxET3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
DEVICE MARKING INFORMATION
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2012 − Rev. 8
BZX84C2V4ET1/D
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25C
A
I
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
Z
Maximum Zener Impedance @ I
ZT
V
Z
V
R
ZT
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
I
V
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
C
Max. Capacitance @ V = 0 and f = 1 MHz
R
Zener Voltage Regulator
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2
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
V
Z2
(V)
Max
V
(V)
= 5 mA
@ I
= 1
mA
V
(V)
Reverse
Leakage
Current
q
VZ
(mV/k)
Z1
ZT2
Z3
Z
(W)
@ I
Z
(W)
@ I
Z
ZT3
(W)
@
C (pF)
@
ZT1
ZT2
@ I
@ I =20 mA
ZT1
(Note 4)
ZT3
(Note 4)
(Note 4)
@ I =5 mA
ZT1
V = 0
ZT1
=
ZT2
=
R
I
V
(V)
Device
I
=
f =
R
mA
R
ZT3
@
Min Nom Max
Min Max
Min
Max
Min Max
Device*
Marking
1 MHz
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
5 mA
1 mA
20 mA
50
50
50
40
40
30
30
15
15
10
6
BZX84C2V4ET1G
BZX84C2V7ET1G
BZX84C3V0ET1G
BZX84C3V3ET1G
BZX84C3V6ET1G
BZX84C3V9ET1G
BZX84C4V3ET1G
BZX84C4V7ET1G
BZX84C5V1ET1G
BZX84C5V6ET1G
BZX84C6V2ET1G
BZX84C6V8ET1G
BZX84C7V5ET1G
BZX84C8V2ET1G
BZX84C9V1ET1G
BZX84C10ET1G
BZX84C11ET1G
BZX84C12ET1G
BZX84C13ET1G
BZX84C15ET1G
BZX84C16ET1G
BZX84C18ET1G
BZX84C20ET1G
BZX84C22ET1G
BZX84C24ET1G
BA1
BA2
BA3
BA4
BA5
BA6
BA7
BA9
BB1
BB2
BB3
BB4
BB5
BB6
BB7
BB8
BB9
BC1
BC2
BC3
BC4
BC5
BC6
BC7
BC8
2.2
2.5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.6
2.9
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
600
600
600
600
600
600
600
500
480
400
150
80
2.6
3.0
3.2
3.6
50
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
−3.5
−3.5
−3.5
−3.5
−3.5
0
0
0
0
0
20
10
2.8
3.2
3.3
3.9
3.1
3.5
3.6
4.2
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
3.4
3.8
3.9
4.5
3.7
4.1
4.1
4.7
−3.5 −2.5
−3.5
4.0
4.6
4.4
5.1
0
4.4
5.0
4.5
5.4
−3.5 0.2
−2.7 1.2
4.8
5.4
5.0
5.9
5.2
6.0
5.2
6.3
−2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
5.8
6.6
5.8
6.8
6.4
7.2
6.4
7.4
6
7.0
7.9
80
7.0
8.0
6
7.7
8.7
80
7.7
8.8
6
8.5
9.6
100
150
150
150
170
200
200
225
225
250
250
8.5
9.7
8
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
9.4
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11
10.2 11.6
11.2 12.7
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
12
13
12.3
14
11
15
13.7 15.5
0.05 10.5
13
16
15.2
16.7
17
19
0.05 11.2 10.4
0.05 12.6 12.4
14
18
16
20
18.7 21.1
20.7 23.2
22.7 25.5
0.05
14
14.4
18
22
0.05 15.4 16.4
0.05 16.8 18.4
20
85
24
22
80
q
VZ
Max
(mV/k)
Below
V
@ I
Below
Reverse
Leakage
Current
Z2
Z
Z
Z
ZT3
Below
@ I
ZT3
C (pF)
ZT1
ZT2
V
Z1
Below
=
V
Below
= 10 mA
@ I
= 2
ZT2
Z3
ZT1
Below
@ I
Below
@ I
@ V
R
@ I
= 2 mA
0.1 mA
@ I
mA
ZT1
ZT3
= 0
f =
1 MHz
ZT1
=
ZT4
=
I
V
(V)
Device
Marking
=
R
R
@
Min Nom Max
Min Max
Min
Max
Min Max
mA
Device*
BZX84C27ET1G
BZX84C30ET1G
BZX84C33ET1G
BZX84C36ET1G
BZX84C39ET1G
BZX84C43ET1G
BZX84C47ET1G
BZX84C51ET1G
BZX84C56ET1G
BZX84C62ET1G
BZX84C68ET1G
BZX84C75ET1G
2 mA
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
10 mA
BC9
BD1
BD2
BD3
BD4
BK6
BD5
BD6
BD7
BD8
BD9
BE1
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
28.9
32
35
38
41
46
50
54
60
66
72
79
80
25
28.9
32
35
38
41
46
50
54
60
66
72
79
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
45
0.05 18.9 21.4 25.3
0.05 21 24.4 29.4
70
70
70
70
45
40
40
40
40
35
35
35
80
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
50
80
55
0.05 23.1 27.4 33.4
0.05 25.2 30.4 37.4
0.05 27.3 33.4 41.2
0.05 30.1 37.6 46.6
90
60
130
150
170
180
200
215
240
255
70
80
90
0.05 32.9
42
51.8
100
110
120
130
140
0.05 35.7 46.6 57.2
0.05 39.2 52.2 63.8
0.05 43.4 58.8 71.6
0.05 47.6 65.6 79.8
0.05 52.5 73.4 88.6
73.2
80.2
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25C
Z
* Include SZ-prefix devices where applicable.
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3
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
TYPICAL T VALUES
C
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55C to +150C)
(Temperature Range −55C to +150C)
1000
100
10
1000
100
10
T = 255C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I = 1 mA
Z
I = 0.1 I
Z(AC) Z(DC)
f = 1 kHz
5 mA
20 mA
75C 25C
0.6 0.7
0C
150C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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4
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25C
A
0 V BIAS
1 V BIAS
100
10
1
+150C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25C
−55C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25C
A
T = 25C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 9. 8 20 ms Pulse Waveform
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5
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
q
2.10
0
2.40
−−−
2.64
10
0.083
0
0.094
−−−
0.104
10
A
E
L
STYLE 8:
PIN 1. ANODE
A1
L1
VIEW C
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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BZX84C2V4ET1/D
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