BZX84C5V1ET3G [ONSEMI]
Energy Rated Zeners in SOT-23 225 W;
| 型号： | BZX84C5V1ET3G |
| 厂家： | 
ONSEMI |
| 描述： | Energy Rated Zeners in SOT-23 225 W 测试 光电二极管 齐纳二极管 |
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
http://onsemi.com
Specification Features
3
1
Cathode
Anode
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 ms)
3
SOT−23
CASE 318
STYLE 8
1
2
• Pb−Free Package is Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
MARKING DIAGRAM
xxxM
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx = Specific Device Code
M
= Date Code
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
ORDERING INFORMATION
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
Watts
†
@ T ≤ 25°C
Device
Package
Shipping
L
Total Power Dissipation on FR−5 Board,
P
D
BZX84CxxxET1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
(Note 2) @ T = 25°C
225
1.8
mW
mW/°C
A
BZX84CxxxET1G SOT−23
(Pb−Free)
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
q
JA
BZX84CxxxET3
SOT−23 10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Total Power Dissipation on Alumina
P
D
Substrate, (Note 3) @ T = 25°C
300
2.4
mW
mW/°C
A
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
°C
q
JA
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Junction and Storage
Temperature Range
T , T
J
−65 to
+150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
July, 2004 − Rev. 3
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
A
I
unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
Z
Maximum Zener Impedance @ I
ZT
V
Z
V
R
ZT
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
I
V
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
C
Max. Capacitance @ V = 0 and f = 1 MHz
R
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Max
V
(V)
= 5 mA
V
(V)
= 1 mA
V
(V)
Reverse
Leakage
Current
q
VZ
(mV/k)
Z1
Z2
Z3
Z
(W)
@ I
Z
(W)
@ I
Z
ZT3
(W)
@
C (pF)
@
V = 0
R
ZT1
ZT2
@ I
@ I
@ I =20 mA
ZT1
(Note 4)
ZT2
(Note 4)
ZT3
(Note 4)
@ I =5 mA
ZT1
Device
Mark-
ing
ZT1
ZT2
I
V
(V)
=
=
I
=
f =
R
R
ZT3
@
Min Nom Max
Min
Max
2.9
4.7
5.3
6
Min
3.6
4.5
5
Max
4.2
mA
Min Max
Device
5 mA
1 mA
20 mA
40
15
15
10
6
1 MHz
450
260
225
200
185
155
140
130
130
110
105
100
80
BZX84C3V3ET1
BZX84C4V7ET1
BZX84C5V1ET1
BZX84C5V6ET1
BZX84C6V2ET1, G*
BZX84C6V8ET1
BZX84C7V5ET1
BZX84C10ET1
BZX84C12ET1
BZX84C15ET1
BZX84C16ET1
BZX84C18ET1
BZX84C24ET1
BA4
BA9
BB1
BB2
BB3
BB4
BB5
BB8
BC1
BC3
BC4
BC5
BC8
3.1
4.4
3.3
4.7
5.1
5.6
6.2
6.8
7.5
10
3.5
5
95
80
60
40
10
15
15
20
25
30
40
45
70
2.3
3.7
600
500
480
400
150
80
5
3
2
1
3
2
1
1
−3.5
0
5.4
2
−3.5 0.2
−2.7 1.2
−2.0 2.5
4.8
5.4
4.2
5.9
2
5.2
6
4.8
5.2
5.8
6.4
7
6.3
2
5.8
6.6
5.6
6.6
7.2
7.9
10.6
12.7
15.5
17
6.8
4
0.4
1.2
2.5
4.5
3.7
4.5
5.3
8.0
6.4
7.2
6.3
7.4
6
4
7
7.9
6.9
80
8
6
5
9.4
10.6
12.7
15.8
17.1
19.1
25.6
9.3
150
150
200
200
225
250
9.4
11.4
13.9
15.4
16.9
22.9
10.7
12.9
15.7
17.2
19.2
25.7
10
10
20
20
20
25
0.2
0.1
7
11.4
14.3
15.3
16.8
22.8
12
11.2
13.7
15.2
16.7
22.7
8
6.0 10.0
15
0.05 10.5
9.2 13.0
16
0.05 11.2 10.4 14.0
0.05 12.6 12.4 16.0
0.05 16.8 18.4 22.0
18
19
24
25.5
q
VZ
Max
(mV/k) Be-
low
V
@ I
Below
V
@ I
Below
Reverse
Leakage
Current
Z2
Z3
Z
Z
Z
ZT3
Below
@ I
ZT3
C (pF)
ZT1
ZT2
V
Z1
Below
=
= 10 m
@ I
= 2
ZT2
ZT3
ZT1
Below
@ I
Below
@ I
@ V
R
@ I
= 2 mA
0.1 mA
A
mA
ZT1
Device
Mark-
ing
= 0
f =
1 MHz
ZT1
=
ZT4
=
I
V
(V)
=
R
R
@
Min Nom Max
Min
Max
28.9
46
Min
Max
29.3
46.5
mA
Min Max
Device
BZX84C27ET1
BZX84C43ET1
2 mA
0.5 mA
10 mA
BC9
BK6
25.1
40
27
43
28.9
46
80
25
300
25.2
40.1
45
0.05 18.9 21.4 25.3
0.05 30.1 37.6 46.6
70
40
150
39.7
375
80
* The “G” suffix indicates Pb−Free package available.
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C
Z
http://onsemi.com
2
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
TYPICAL T VALUES
C
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1000
100
10
T = 255C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I = 1 mA
Z
I = 0.1 I
Z(AC) Z(DC)
f = 1 kHz
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
http://onsemi.com
3
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
0 V BIAS
1 V BIAS
100
10
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25°C
−55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
http://onsemi.com
4
BZX84C2V4ET1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B
S
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
1
2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
V
G
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
C
J
H
K
L
K
D
S
V
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
BZX84C2V4ET1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BZX84C2V4ET1/D
相关型号：
BZX84C5V1GS08
5.1V, 0.35W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SOT-23, 3 PIN
VISHAY
BZX84C5V1GS18
Zener Diode, 5.1V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC, SOT-23, 3 PIN
VISHAY
BZX84C5V1LR
DIODE VOLTAGE REGULATOR DIODE, TO-236AB, MICRO MINIATURE PACKAGE-3, Voltage Regulator Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明