C106M1G [ONSEMI]

Sensitive Gate Silicon Controlled Rectifiers; 敏感栅硅控整流器
C106M1G
元器件型号: C106M1G
生产厂家: ON SEMICONDUCTOR    ON SEMICONDUCTOR
描述和应用:

Sensitive Gate Silicon Controlled Rectifiers
敏感栅硅控整流器

栅极 触发装置 可控硅整流器 PC 局域网
PDF文件: 总6页 (文件大小:62K)
下载文档:  下载PDF数据表文档文件
型号参数:C106M1G参数

C106M1LEADFREE

Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-202, TO-202, 3 PIN

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0 CENTRAL

C106M1TIN/LEAD

Silicon Controlled Rectifier,

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0 CENTRAL

C106M2

SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS

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11 CENTRAL

C106M2

Thyristor SCR 600V 20A 3-Pin(3+Tab) TO-225 Box

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0 NJSEMI

C106M-2

Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA

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0 MOTOROLA

C106M-2

Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC PACKAGE-3

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0 NEC

C106M3

The Type C106 Silicon Controlled Rectifier

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0 NJSEMI

C106M4

The Type C106 Silicon Controlled Rectifier

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0 NJSEMI

C106M-600V

Thyristors logic level

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22 TGS

C106MG

Sensitive Gate Silicon Controlled Rectifiers

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363 ONSEMI

C106N

4-A Sensitive-Gate Silicon Controlled Rectifiers

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22 GESS

C106N1

Thyristor SCR 600V 20A 3-Pin(3+Tab) TO-225 Box

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0 NJSEMI

C106N1

Thyristor SCR 600V 20A 3-Pin(3+Tab) TO-225 Box

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0 NJSEMI

C106Q

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 15; Max TMS Bridge Input Voltage: 2.55; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-126

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0 DIGITRON

C106Q1

The Type C106 Silicon Controlled Rectifier

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0 NJSEMI