CAT130161JWI-GT3 [ONSEMI]
Voltage Supervisor with Microwire Serial CMOS EEPROM; 电压监控器与Microwire串行EEPROM CMOS型号: | CAT130161JWI-GT3 |
厂家: | ONSEMI |
描述: | Voltage Supervisor with Microwire Serial CMOS EEPROM |
文件: | 总14页 (文件大小:149K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CAT130xx
Voltage Supervisor with Microwire Serial
CMOS EEPROM
FEATURES
DESCRIPTION
Precision Power Supply Voltage Monitor
The CAT130xx (see table below) are memory and
supervisory solutions for microcontroller based
systems. A CMOS serial EEPROM memory and a
system power supervisor with brown-out protection
are integrated together. Memory interface is via
Microwire serial protocol.
5V, 3.3V, 3V & 2.5V systems
7 threshold voltage options
Active High or Low Reset
Valid reset guaranteed at VCC = 1 V
High Speed Operation
The CAT130xx provides a precision VCC sense circuit
with two reset output options: CMOS active low output
or CMOS active high. The RESET output is active
whenever VCC is below the reset threshold or falls
below the reset threshold voltage.
Selectable x8 or x16 memory organization
Low power CMOS technology
1,000,000 Program/Erase cycles
100 year data retention
The power supply monitor and reset circuit protect
system controllers during power up/down and against
brownout conditions. Seven reset threshold voltages
support 5V, 3.3V, 3V and 2.5V systems. If power
supply voltages are out of tolerance reset signals
become active, preventing the system microcontroller,
ASIC or peripherals from operating. Reset signals
become inactive typically 240ms after the supply
voltage exceeds the reset threshold level.
Industrial temperature range
RoHS-compliant 8-pin SOIC package
For Ordering Information details, see page 13.
PIN CONFIGURATION
SOIC (W)
MEMORY SIZE SELECTOR
CS
SK
DI
1
2
3
4
8
7
6
5
VCC
Product
13001
13004
13008
13016
Memory density
1-Kbit
¯¯¯¯
RST/ RST
ORG
DO
GND
4-Kbit
8-Kbit
16-Kbit
PIN FUNCTION
THRESHOLD SUFFIX SELECTOR
Pin Name
CS
SK
DI
DO
GND
ORG
¯¯¯¯
RST/ RST
Function
Chip Select
Clock Input
Serial Data Input
Serial Data Output
Ground
Memory Organization
Reset Output
Nominal Threshold
Voltage
Threshold Suffix
Designation
4.63V
4.38V
4.00V
3.08V
2.93V
2.63V
2.32V
L
M
J
T
S
R
Z
VCC
Power Supply
Note:
When the ORG pin is connected to VCC, the x16 organization is
selected. When it is connected to ground, the x8 pin is selected. If
the ORG pin is left unconnected, then an internal pullup device will
select the x16 organization.
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1121 Rev. B
CAT130xx
BLOCK DIAGRAM
VCC
DO
ORG
VOLTAGE
DETECTOR
EEPROM
RST or RST
CS
SK
DI
VSS
ABSOLUTE MAXIMUM RATINGS(1)
Parameters
Ratings
Units
Storage Temperature
Voltage on Any Pin with Respect to Ground(2)
-65 to +150
-0.5 to +6.5
°C
V
RELIABILITY CHARACTERISTICS(3)
Symbol Parameter
NEND(4) Endurance
Min
1,000,000
100
Units
Program/ Erase Cycles
Years
TDR
Data Retention
D.C. OPERATING CHARACTERISTICS
CC = +2.5V to +5.5V unless otherwise specified.
V
Limits
Symbol Parameter
ICC Supply Current
ISB
Test Condition
Units
mA
Min.
Typ.
Max.
3
25
Read or Write at 1MHz
12
10
VCC < 5.5V; All I/O Pins at VSS or VCC
Standby Current
μA
20
VCC < 3.6V; All I/O Pins at VSS or VCC
IL
I/O Pin Leakage
2
Pin at GND or VCC
μA
V
VIL
VIH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-0.5
2.0
0.8
VCC + 0.5
0.4
V
VOL
VOH
V
VCC ≥ 2.5V, IOL = 2.1mA
VCC ≥ 4.5V, IOH = -0.4mA
2.4
V
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than -1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Block Mode, VCC = 5 V, 25°C
Doc. No. MD-1121 Rev. B
2
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT130xx
A.C. CHARACTERISTICS (MEMORY)(1)
CC = +2.5V to 5.5V, TA = -40°C to 85°C, unless otherwise specified.
V
Symbol
fSK
Parameter
Min
DC
50
Max
Units
kHz
ns
Clock Frequency
2000
tCSS
CS Setup Time
tCSH
CS Hold Time
0
ns
tCSMIN
tSKHI
tSKLOW
tDIS
Minimum CS Low Time
Minimum SK High Time
Minimum SK Low Time
DI Setup Time
0.25
0.25
0.25
100
100
µs
µs
µs
ns
tDIH
DI Hold Time
ns
tPD1
Output Delay to 1
0.25
0.25
100
0.25
5
µs
tPD0
Output Delay to 0
µs
(1)
tHZ
Output Delay to High-Z
Output Delay to Status Valid
Program/Erase Pulse Width
Power-up to Ready Mode
ns
tSV
µs
tEW
ms
ms
(2), (3)
tPU
1
Notes:
(1) Test conditions according to “A.C. Test Conditions” table.
(2) Tested initially and after a design or process change that affects this parameter.
(3)
tPU is the delay between the time VCC is stable and the device is ready to accept commands.
A.C. TEST CONDITIONS
Input Rise and Fall Times ≤ 50 ns
Input Levels
Input Levels
0.4V to 2.4V (4.5V < VCC < 5.5V)
0.2VCC to 0.7VCC (2.5V < VCC < 4.5V)
Timing Reference Levels 0.8V, 2.0V (4.5V < VCC < 5.5V)
Timing Reference Levels 0.5VCC (2.5V < VCC < 4.5V)
Output Load
Current Source: IOL max / IOH max; CL = 100pF
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
3
Doc. No. MD-1121 Rev. B
CAT130xx
ELECTRICAL CHARACTERISTICS (SUPERVISORY FUNCTION)
VCC = Full range, TA = -40ºC to +85ºC unless otherwise noted. Typical values at TA = +25ºC and VCC = 5V for
L/M/J versions, VCC = 3.3V for T/S versions, VCC = 3V for R version and VCC = 2.5V for Z version.
Symbol
Parameter
Threshold Conditions
Min
Typ
Max Units
4.70
Reset Threshold Voltage
TA = +25ºC
L
4.56
4.50
4.31
4.25
3.93
3.89
3.04
3.00
2.89
2.85
2.59
2.55
2.28
2.25
4.63
VTH
TA = -40ºC to +85ºC
4.75
TA = +25ºC
4.38
4.00
3.08
2.93
2.63
2.32
4.45
M
J
TA = -40ºC to +85ºC
TA = +25ºC
4.50
4.06
TA = -40ºC to +85ºC
TA = +25ºC
4.10
3.11
V
T
S
R
Z
TA = -40ºC to +85ºC
TA = +25ºC
3.15
2.96
3.00
2.66
2.70
2.35
2.38
TA = -40ºC to +85ºC
TA = +25ºC
TA = -40ºC to +85ºC
TA = +25ºC
TA = -40ºC to +85ºC
Symbol Parameter
Reset Threshold Tempco
VCC to Reset Delay(2)
tPURST Reset Active Timeout Period
Conditions
Min
Typ(1) Max Units
30
20
ppm/ºC
µs
tRPD
VCC = VTH to (VTH -100mV)
TA = -40ºC to +85ºC
140
240
460
0.3
ms
VCC = VTH min, ISINK = 1.2 mA
R/S/T/Z
¯¯¯¯¯¯
RESET Output Voltage Low
(Push-pull, active LOW,
CAT130xx9)
VOL
V
V
VCC = VTH min, ISINK = 3.2 mA
J/L/M
0.4
0.3
VCC > 1.0V, ISINK = 50µA
VCC = VTH max, ISOURCE = -500µA
R/S/T/Z
0.8VCC
¯¯¯¯¯¯
RESET Output Voltage High
VOH
(Push-pull, active LOW,
CAT130xx9)
VCC = VTH max, ISOURCE = -800µA
J/L/M
VCC - 1.5
VCC > VTH max, ISINK = 1.2mA
R/S/T/Z
RESET Output Voltage Low
0.3
0.4
VOL
V
V
(Push-pull, active HIGH,
CAT130xx1)
VCC > VTH max, ISINK = 3.2mA
J/L/M
RESET Output Voltage High
1.8V < VCC ≤ VTH min,
ISOURCE = -150µA
VOH
0.8VCC
(Push-pull, active HIGH,
CAT130xx1)
Notes:
(1) Production testing done at TA = +25ºC; limits over temperature guaranteed by design only.
¯¯¯¯¯¯
(2) RESET output for the CAT130xx9; RESET output for the CAT130xx1.
Doc. No. MD-1121 Rev. B
4
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT130xx
RESET CONTROLLER DESCRIPTION
PIN DESCRIPTION
The reset signal is asserted LOW for the CAT130xx9
and HIGH for the CAT130xx1 when the power supply
voltage falls below the threshold trip voltage
and remains asserted for at least 140ms (tPURST) after
the power supply voltage has risen above the
threshold. Reset output timing is shown in Figure 1.
¯¯¯¯¯¯
RESET/RESET: The reset output is available in two
versions: CMOS Active Low (CAT130xx9) and CMOS
Active High (CAT130xx1). Both versions are push-pull
outputs for high efficiency.
DI: The serial data input pin accepts op-codes,
addresses and data. The input data is latched on the
rising edge of the SK clock input.
The CAT130xx devices protect μPs against brownout
failure. Short duration VCC transients of 4μsec or less and
100mV amplitude typically do not generate a Reset pulse.
DO: The serial data output pin is used to transfer data
out of the device. The data is shifted out on the rising
edge of the SK clock.
Figure 2 shows the maximum pulse duration of
negative-going VCC transients that do not cause a
reset condition. As the amplitude of the transient goes
further below the threshold (increasing VTH - VCC), the
maximum pulse duration decreases. In this test, the
VCC starts from an initial voltage of 0.5V above the
threshold and drops below it by the amplitude of the
overdrive voltage (VTH - VCC).
SK: The serial clock input pin accepts the clock
provided by the host and used for synchronizing
communication between host and CAT130xx device.
CS: The chip select input pin is used to enable/disable
the CAT130xx. When CS is high, the device is
selected and accepts op-codes, addresses and data.
Upon receiving a Write or Erase instruction, the falling
edge of CS will start the internal write cycle to the
selected memory location.
T
= 25ºC
AMB
ORG: The memory organization input selects the memory
configuration as either register of 16 bits (ORG tied to
VCC or floating) or 8 bits (ORG connected to GND).
CAT130xxZ
DEVICE OPERATION
CAT130xxM
The CAT130xx products combine the accurate
voltage monitoring capabilities of a standalone voltage
supervisor with the high quality and reliability of
standard EEPROMs from Catalyst Semiconductor.
RESET OVERDRIVE V - V
[mV]
TH
CC
Figure 2. Maximum Transient Duration without
Causing a Reset Pulse vs. Overdrive Voltage
VTH
VCC
V
RVALID
tRPD
tPURST
tRPD
tPURST
RESET
RESET
CAT130xx9
CAT130xx1
Figure 1. RESET Output Timing
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
5
Doc. No. MD-1121 Rev. B
CAT130xx
The format for all instructions sent to the device is a
logical “1” start bit, a 2-bit (or 4-bit) opcode, 6-bit
(13001) / 8-bit (13004) / 9-bit (13008) / 10-bit (13016)
address (an additional bit when organized as x8) and
for write operations a 16-bit data field (8-bit for x8
organization). The instruction format is shown in
Instruction Set Table.
EMBEDDED EEPROM OPERATION
The CAT130xx has a nonvolatile embedded memory
intended for use with industry standard micropro–
cessors. The memory can be organized as either
registers of 16 bits or 8 bits. The CAT130xx operates
on a single power supply and will generate on chip the
high voltage required during any write operation.
INSTRUCTION SET
Start
Address
Data
Instruction Device
Bit
Opcode
Comments
x 8
x 16
x 8
x 16
READ
ERASE
WRITE
EWEN
EWDS
ERAL
13001
13004
13008
13016
13001
13004
13008
13016
13001
13004
13008
13016
13001
13004
13008
13016
13001
13004
13008
13016
13001
13004
13008
13016
13001
13004
13008
13016
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10
10
10
10
11
11
11
11
01
01
01
01
00
00
00
00
00
00
00
00
00
00
00
00
00
00
00
00
A6-A0
A8-A0
A5-A0
A7-A0
Read Address AN-A0
A9-A0
A8-A0
A10-A0
A6-A0
A9-A0
Clear Address AN-A0
Write Address AN-A0
Write Enable
A5-A0
A8-A0
A7-A0
A9-A0
A8-A0
A10-A0
A6-A0
A9-A0
A5-A0
D7-D0 D15-D0
D7-D0 D15-D0
D7-D0 D15-D0
D7-D0 D15-D0
A8-A0
A7-A0
A9-A0
A8-A0
A10-A0
11xxxxx
11xxxxxxx
11xxxxxxxx
A9-A0
11xxxx
11xxxxxx
11xxxxxxx
11xxxxxxxxx 11xxxxxxxx
Write Disable
00xxxxx
00xxxxxxx
00xxxxxxxx
00xxxx
00xxxxxx
00xxxxxxx
00xxxxxxxxx 00xxxxxxxx
Clear All Addresses
Write All Addresses
10xxxxx
10xxxxxxx
10xxxxxxxx
10xxxx
10xxxxxx
10xxxxxxx
10xxxxxxxxx 10xxxxxxxx
WRAL
01xxxxx
01xxxxxxx
01xxxxxxxx
01xxxx
D7-D0 D15-D0
D7-D0 D15-D0
01xxxxxx
01xxxxxxx D7-D0 D15-D0
01xxxxxxxxx 01xxxxxxxx D7-D0 D15-D0
Doc. No. MD-1121 Rev. B
6
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT130xx
Read
Instructions, addresses, and write data are clocked
into the DI pin on the rising edge of the clock (SK).
The DO pin is normally in a high impedance state
except when reading data from the device, or when
checking the ready/busy status during a write
operation. The serial communication protocol follows
the timing shown in Figure 3.
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT130xx
will come out of the high impedance state and, after
sending an initial dummy zero bit, will begin shifting
out the data addressed (MSB first). The output data
bits will toggle on the rising edge of the SK clock and
are stable after the specified time delay (tPD0 or tPD1).
The READ instruction timing is illustrated in Figure 4.
The ready/busy status can be determined after the
start of internal write cycle by selecting the device (CS
high) and polling the DO pin; DO low indicates that the
write operation is not completed, while DO high
indicates that the device is ready for the next
instruction. If necessary, the DO pin may be placed
back into a high impedance state during chip select by
shifting a dummy “1” into the DI pin. The DO pin will
enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high
impedance state is recommended in applications
where the DI pin and the DO pin are to be tied
together to form a common DI/O pin. The Ready/Busy
flag can be disabled only in Ready state; no change is
allowed in Busy state.
For the CAT13004/08/16, after the initial data word
has been shifted out and CS remains asserted with
the SK clock continuing to toggle, the device will auto-
matically increment to the next address and shift out
the next data word in a sequential READ mode. As
long as CS is continuously asserted and SK continues
to toggle, the device will keep incrementing to the next
address automatically until it reaches to the end of the
address space, then loops back to address 0. In the
sequential READ mode, only the initial data word is
preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit.
Figure 3. Sychronous Data Timing
t
t
t
SKLOW
SKHI
CSH
SK
t
t
t
DIS
DIH
VALID
VALID
DI
t
CSS
CS
t
t
t
CSMIN
DIS
PD0, PD1
DO
DATA VALID
Figure 4. Read Instruction Timing
SK
t
CSMIN
CS
STANDBY
A
A
A
0
N
N-1
DI
1
1
0
t
HZ
t
HIGH-Z
HIGH-Z
PD0
DO
0
7
D
D
D
D
0
N
N-1
1
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
Doc. No. MD-1121 Rev. B
CAT130xx
Erase/Write Enable and Disable
Write
The CAT130xx powers up in the write disable state.
Any writing after power-up or after an EWDS (write
disable) instruction must first be preceded by the
EWEN (write enable) instruction. Once the write
instruction is enabled, it will remain enabled until power
to the device is removed, or the EWDS instruction is
sent. The EWDS instruction can be used to disable all
CAT130xx write and erase instructions, and will prevent
any accidental writing or clearing of the device. Data
can be read normally from the device regardless of the
write enable/disable status. The EWEN and EWDS
instructions timing is shown in Figure 5.
After receiving a WRITE command (Figure 6), address
and the data, the CS (Chip Select) pin must be
deselected for a minimum of tCSMIN. The falling edge of
CS will start the self clocking for auto-clear and data
store cycles on the memory location specified in the
instruction. The clocking of the SK pin is not
necessary after the device has entered the self
clocking mode. The ready/busy status of the
CAT130xx can be determined by selecting the device
and polling the DO pin. Since this device features
Auto-Clear before write, it is NOT necessary to erase
a memory location before it is written into.
Figure 5. EWEN/EWDS Instruction Timing
SK
STANDBY
CS
DI
1
0
0
*
* ENABLE=11
DISABLE=00
Figure 6. Write Instruction Timing
SK
t
CSMIN
STANDBY
STATUS
VERIFY
CS
A
A
A
0
D
D
0
N
N-1
N
DI
1
0
1
t
t
SV
HZ
BUSY
HIGH-Z
DO
READY
HIGH-Z
t
EW
Doc. No. MD-1121 Rev. B
8
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT130xx
Erase All
Erase
Upon receiving an ERAL command (Figure 8), the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN. The falling edge of CS will start the self clocking
clear cycle of all memory locations in the device. The
clocking of the SK pin is not necessary after the
device has entered the self clocking mode. The
ready/busy status of the CAT130xx can be determi–
ned by selecting the device and polling the DO pin.
Once cleared, the contents of all memory bits return to
a logical “1” state.
Upon receiving an ERASE command and address,
the CS (Chip Select) pin must be deasserted for a
minimum of tCSMIN (Figure 7). The falling edge of CS
will start the self clocking clear cycle of the selected
memory location. The clocking of the SK pin is not
necessary after the device has entered the self
clocking mode. The ready/busy status of the
CAT130xx can be determined by selecting the device
and polling the DO pin. Once cleared, the content of a
cleared location returns to a logical “1” state.
Figure 7. Erase Instruction Timing
SK
STANDBY
STATUS VERIFY
CS
t
CS
A
A
0
A
N-1
N
DI
1
1
1
t
t
SV
HZ
HIGH-Z
DO
BUSY
EW
READY
HIGH-Z
t
Figure 8. ERAL Instruction Timing
SK
CS
STATUS VERIFY
STANDBY
t
CS
DI
1
0
0
1
0
t
t
HZ
SV
HIGH-Z
DO
BUSY
READY
HIGH-Z
t
EW
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
9
Doc. No. MD-1121 Rev. B
CAT130xx
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN (Figure 9). The falling edge of CS will start the
self clocking data write to all memory locations in the
device. The clocking of the SK pin is not necessary
after the device has entered the self clocking mode.
The ready/busy status of the CAT130xx can be deter–
mined by selecting the device and polling the DO pin.
It is not necessary for all memory locations to be
cleared before the WRAL command is executed.
Figure 9. WRAL Instruction Timing
SK
CS
STATUS VERIFY
STANDBY
t
CSMIN
D
D
0
DI
1
0
0
0
1
N
t
t
SV
HZ
DO
BUSY
READY
HIGH-Z
t
EW
Doc. No. MD-1121 Rev. B
10
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT130xx
PACKAGE OUTLINE DRAWING
8-LEAD 150 MIL SOIC (W)
E1
E
h x 45
D
C
A
q1
e
A1
L
b
SYMBOL
MIN
0.10
1.35
0.33
0.19
4.80
5.80
3.80
NOM
MAX
0.25
1.75
0.51
0.25
5.00
6.20
4.00
A1
A
b
C
D
E
E1
e
1.27 BSC
h
0.25
0.40
0°
0.50
1.27
8°
L
q1
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC specification MS-012 dimensions.
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
11
Doc. No. MD-1121 Rev. B
CAT130xx
PACKAGE MARKING
8-LEAD SOIC
130XXZWI
4YYWWA
○
CSI = Catalyst Semiconductor, Inc.
XX = Device Code (see Marking Code table below)
Z = Supervisory Output Code (see Marking Code table below)
I = Temperature Range
YY = Production Year
WW = Production Week
A = Product Revision
4 = Lead Finish NiPdAu
Device Marking Codes
XX
13001
13004
13008
13016
01
04
08
16
Supervisory Marking Codes
Z
Output Active Low
Output Active High
9
1
Doc. No. MD-1121 Rev. B
12
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT130xx
EXAMPLE OF ORDERING INFORMATION
Prefix
Device # Suffix
13001
CAT
9
S
W
I
-
G
T3
Lead Finish
G: NiPdAu (PPF)
Company ID
Temperature Range
Tape & Reel
I = Industrial (-40ºC to 85ºC)
T: Tape & Reel
3: 3000 units / Reel
Product Type with
Memory Density
13001: 1-Kb EEPROM
13004: 4-Kb EEPROM
13008(5): 8-Kb EEPROM
13016(5): 16-Kb EEPROM
Package
W: SOIC
Reset Threshold Voltage
L: 4.50V – 4.75V
M: 4.25V – 4.50V
J: 3.89V – 4.10V
T: 3.00V – 3.15V
S: 2.85V – 3.00V
R: 2.55V – 2.70V
Z: 2.25V – 2.38V
Supervisor Output Type
9: CMOS Active Low
1: CMOS Active High
Notes:
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).
(2) The standard lead finish is NiPdAu pre-plated (PPF) lead frames.
(3) The device used in the above example is a CAT130019SWI-GT3 (1Kb EEPROM, with Active Low CMOS output, with a reset threshold between
2.85V - 3.00V, in an SOIC, Industrial Temperature, NiPdAu, Tape and Reel.
(4) For additional package and temperature options, please contact your nearest ON Semiconductor Sales office.
(5) For 8-Kb and 16-Kb embedded EEPROM option availability please contact your nearest ON Semiconductor Sales office.
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
13
Doc. No. MD-1121 Rev. B
CAT130xx
REVISION HISTORY
Date
Rev. Description
17-Jan-07
7-Nov-08
A
B
Initial Issue
Change logo and fine print to ON Semiconductor
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Doc. No. MD-1121, Rev. B
14
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
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