CAT28C16AKA-90T [ONSEMI]

16 kb CMOS Parallel EEPROM; 16 kb的CMOS并行EEPROM
CAT28C16AKA-90T
型号: CAT28C16AKA-90T
厂家: ONSEMI    ONSEMI
描述:

16 kb CMOS Parallel EEPROM
16 kb的CMOS并行EEPROM

存储 内存集成电路 光电二极管 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总10页 (文件大小:127K)
中文:  中文翻译
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CAT28C16A  
16 kb CMOS Parallel  
EEPROM  
Description  
The CAT28C16A is a fast, low power, 5Vonly CMOS Parallel  
EEPROM organized as 2K x 8bits. It requires a simple interface for  
insystem programming. Onchip address and data latches,  
http://onsemi.com  
selftimed write cycle with autoclear and V power up/down write  
CC  
protection eliminate additional timing and protection hardware. DATA  
Polling signals the start and end of the selftimed write cycle.  
Additionally, the CAT28C16A features hardware write protection.  
The CAT28C16A is manufactured using ON Semiconductor’s  
advanced CMOS floating gate technology. It is designed to endure  
100,000 program/erase cycles and has a data retention of 100 years.  
The device is available in JEDEC approved 24pin DIP and SOIC or  
32pin PLCC packages.  
SOIC24  
J, K, W, X SUFFIX  
CASE 751BK  
Features  
Fast Read Access Times: 90 ns, 120 ns, 200 ns  
Low Power CMOS Dissipation:  
PDIP24  
L SUFFIX  
CASE 646AD  
PLCC32  
N, G SUFFIX  
CASE 776AK  
– Active: 25 mA Max.  
– Standby: 100 mA Max.  
Simple Write Operation:  
– Onchip Address and Data Latches  
– Selftimed Write Cycle with Autoclear  
PIN FUNCTION  
Pin Name  
Function  
Address Inputs  
Fast Write Cycle Time: 10 ms Max  
End of Write Detection: DATA Polling  
Hardware Write Protection  
CMOS and TTL Compatible I/O  
100,000 Program/Erase Cycles  
100 Year Data Retention  
Commercial, Industrial and Automotive Temperature Ranges  
A A  
0
10  
I/O I/O  
Data Inputs/Outputs  
Chip Enable  
Output Enable  
Write Enable  
5 V Supply  
0
7
CE  
OE  
WE  
V
CC  
V
Ground  
SS  
PIN CONFIGURATION  
NC  
No Connect  
DIP Package (L)  
SOIC Package (J, K, W, X)  
PLCC Package (N, G)  
1
2
3
24  
23  
22  
A
A
V
A
A
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
7
CC  
4
3
2
1 32 31 30  
29  
6
8
5
6
7
8
A
A
A
A
A
A
A
A
A
NC  
NC  
OE  
A
10  
CE  
I/O  
6
5
4
3
2
1
0
8
A
5
9
28  
27  
26  
25  
24  
23  
22  
21  
9
4
5
6
7
8
21  
20  
19  
18  
17  
A
4
WE  
OE  
A
3
A
2
A
10  
9
TOP VIEW  
A
1
CE  
I/O  
10  
11  
12  
13  
A
0
7
9
16  
15  
14  
13  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
NC  
I/O  
0
6
5
4
3
7
I/O  
10  
11  
12  
0
6
1
14 15 16 17 18 19 20  
2
V
SS  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 6  
CAT28C16A/D  
CAT28C16A  
2,048 x 8  
EEPROM  
ARRAY  
ROW  
DECODER  
ADDR. BUFFER  
& LATCHES  
A A  
4
10  
INADVERTENT  
WRITE  
PROTECTION  
HIGH VOLTAGE  
GENERATOR  
V
CC  
CE  
OE  
WE  
CONTROL  
LOGIC  
I/O BUFFERS  
TIMER  
DATA POLLING  
I/O I/O  
0
7
ADDR. BUFFER  
& LATCHES  
A A  
0
3
COLUMN  
DECODER  
Figure 1. Block Diagram  
Table 1. MODE SELECTION  
Mode  
Read  
CE  
L
WE  
OE  
L
I/O  
Power  
ACTIVE  
ACTIVE  
H
D
OUT  
Byte Write (WE Controlled)  
L
H
D
IN  
Byte Write (CE Controlled)  
L
H
D
IN  
ACTIVE  
Standby, and Write Inhibit  
Read and Write Inhibit  
H
X
X
H
X
H
HighZ  
HighZ  
STANDBY  
ACTIVE  
Table 2. CAPACITANCE (T = 25°C, f = 1.0 MHz, V = 5 V)  
A
CC  
Symbol  
(Note 1)  
Test  
Max  
10  
6
Conditions  
Units  
pF  
C
Input/Output Capacitance  
Input Capacitance  
V
I/O  
= 0 V  
= 0 V  
I/O  
C
(Note 1)  
V
IN  
pF  
IN  
1. This parameter is tested initially and after a design or process change that affects the parameter.  
Table 3. ABSOLUTE MAXIMUM RATINGS  
Parameters  
Ratings  
Units  
°C  
°C  
V
Temperature Under Bias  
Storage Temperature  
–55 to +125  
–65 to +150  
Voltage on Any Pin with Respect to Ground (Note 2)  
with Respect to Ground  
–2.0 V to +V + 2.0 V  
CC  
V
CC  
2.0 to +7.0  
1.0  
V
Package Power Dissipation Capability (T = 25°C)  
W
A
Lead Soldering Temperature (10 secs)  
Output Short Circuit Current (Note 3)  
300  
°C  
mA  
100  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
2. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V + 0.5 V, which may overshoot to V + 2.0 V for periods of less than 20 ns.  
CC  
CC  
3. Output shorted for no more than one second. No more than one output shorted at a time.  
http://onsemi.com  
2
 
CAT28C16A  
Table 4. RELIABILITY CHARACTERISTICS (Note 4)  
Symbol Parameter  
(Note 5)  
Min  
100,000  
100  
Max  
Units  
Cycles/Byte  
Years  
N
T
Endurance  
END  
(Notes 5)  
Data Retention  
ESD Susceptibility  
LatchUp  
DR  
V
ZAP  
2,000  
100  
V
I
(Note 6)  
mA  
LTH  
4. This parameter is tested initially and after a design or process change that affects the parameter.  
5. For the CAT28C16A20, the minimum endurance is 10,000 cycles and the minimum data retention is 10 years.  
6. Latchup protection is provided for stresses up to 100 mA on address and data pins from 1 V to V + 1 V.  
CC  
Table 5. D.C. OPERATING CHARACTERISTICS (V = 5 V 10%, unless otherwise specified.)  
CC  
Limits  
Min  
Typ  
Max  
Symbol  
Parameter  
Test Conditions  
CE = OE = V ,  
Units  
I
V
V
Current (Operating, TTL)  
35  
mA  
CC  
CC  
IL  
f = 1/t min, All I/O’s Open  
RC  
I
(Note 7)  
Current (Operating, CMOS)  
CE = OE = V  
,
25  
mA  
CCC  
CC  
ILC  
f = 1/t min, All I/O’s Open  
RC  
I
V
V
Current (Standby, TTL)  
CE = V , All I/O’s Open  
1
mA  
mA  
mA  
mA  
SB  
CC  
IH  
I
(Note 8)  
Current (Standby, CMOS)  
CE = V , All I/O’s Open  
100  
10  
SBC  
CC  
IHC  
I
Input Leakage Current  
Output Leakage Current  
V
V
= GND to V  
CC  
10  
10  
LI  
IN  
I
LO  
= GND to V ,  
CC  
10  
OUT  
CE = V  
IH  
V
(Note 8)  
(Note 7)  
High Level Input Voltage  
Low Level Input Voltage  
High Level Output Voltage  
Low Level Output Voltage  
Write Inhibit Voltage  
2
V
CC  
+ 0.3  
V
V
V
V
V
IH  
V
0.3  
2.4  
0.8  
0.4  
IL  
V
OH  
I
I
= 400 mA  
OH  
V
OL  
= 2.1 mA  
OL  
V
WI  
3.0  
7. V  
8. V  
= 0.3 V to +0.3 V  
ILC  
IHC  
= V 0.3 V to V + 0.3 V  
CC  
CC  
Table 6. A.C. CHARACTERISTICS, READ CYCLE (V = 5 V 10%, unless otherwise specified.)  
CC  
28C16A90  
Min Max  
28C16A12  
Min Max  
28C16A20  
Min Max  
Symbol  
Parameter  
Read Cycle Time  
Units  
ns  
t
90  
120  
200  
RC  
t
CE Access Time  
90  
90  
50  
120  
120  
60  
200  
200  
80  
ns  
CE  
t
Address Access Time  
OE Access Time  
ns  
AA  
OE  
t
ns  
t
(Note 9)  
(Note 9)  
CE Low to Active Output  
OE Low to Active Output  
CE High to HighZ Output  
OE High to HighZ Output  
0
0
0
0
0
0
ns  
LZ  
t
ns  
OLZ  
t
(Notes 9, 10)  
50  
50  
50  
50  
55  
55  
ns  
HZ  
t
(Notes 9,  
10)  
ns  
OHZ  
t
(Note 9)  
Output Hold from Address Change  
0
0
0
ns  
OH  
9. This parameter is tested initially and after a design or process change that affects the parameter.  
10.Output floating (HighZ) is defined as the state when the external data line is no longer driven by the output buffer.  
http://onsemi.com  
3
 
CAT28C16A  
2.4 V  
2.0 V  
0.8 V  
INPUT PULSE LEVELS  
REFERENCE POINTS  
0.45 V  
Figure 2. A.C. Testing Input/Output Waveform (Note 11)  
11. Input rise and fall times (10% and 90%) < 10 ns.  
1.3V  
1N914  
3.3K  
DEVICE  
UNDER  
TEST  
OUT  
C = 100 pF  
L
C INCLUDES JIG CAPACITANCE  
L
Figure 3. A.C. Testing Load Circuit (example)  
Table 7. A.C. CHARACTERISTICS, WRITE CYCLE (V = 5 V 10%, unless otherwise specified.)  
CC  
28C16A90  
Min Max  
28C16A12  
Min Max  
28C16A20  
Min Max  
10  
Symbol  
Parameter  
Write Cycle Time  
Units  
ms  
ns  
t
5
5
WC  
t
Address Setup Time  
Address Hold Time  
CE Setup Time  
0
100  
0
0
100  
0
10  
100  
0
AS  
AH  
CS  
CH  
t
ns  
t
ns  
t
CE Hold Time  
0
0
0
ns  
t
(Note 12)  
CE Pulse Time  
110  
0
110  
0
150  
15  
15  
150  
50  
10  
50  
5
ns  
CW  
t
OE Setup Time  
ns  
OES  
OEH  
t
OE Hold Time  
0
0
ns  
t
(Note 12)  
WE Pulse Width  
Data Setup Time  
Data Hold Time  
110  
60  
0
110  
60  
0
ns  
WP  
t
ns  
DS  
DH  
t
ns  
t
DL  
Data Latch Time  
Write Inhibit Period After Powerup  
5
10  
5
10  
ns  
t
(Note 13)  
0.05  
100  
0.05  
100  
20  
ms  
INIT  
12.A write pulse of less than 20 ns duration will not initiate a write cycle.  
13.This parameter is tested initially and after a design or process change that affects the parameter.  
http://onsemi.com  
4
 
CAT28C16A  
DEVICE OPERATION  
Read  
Data stored in the CAT28C16A is transferred to the data bus when WE is held high, and both OE and CE are held low. The  
data bus is set to a high impedance state when either CE or OE goes high. This 2line control architecture can be used to  
eliminate bus contention in a system environment.  
t
RC  
ADDRESS  
CE  
t
CE  
t
OE  
OE  
t
OLZ  
V
IH  
WE  
t
LZ  
t
OHZ  
t
AA  
t
HZ  
t
OH  
HIGHZ  
DATA OUT  
DATA VALID  
DATA VALID  
Figure 4. Read Cycle  
t
WC  
ADDRESS  
t
AS  
t
AH  
t
t
CH  
CS  
CE  
OE  
WE  
t
t
t
OES  
OEH  
WP  
t
DL  
HIGHZ  
DATA OUT  
DATA IN  
DATA VALID  
t
t
DH  
DS  
Figure 5. Byte Write Cycle [WE Controlled]  
Byte Write  
edge of WE or CE, whichever occurs last. Data, conversely,  
is latched on the rising edge of WE or CE, whichever occurs  
first. Once initiated, a byte write cycle automatically erases  
the addressed byte and the new data is written within 10 ms.  
A write cycle is executed when both CE and WE are low,  
and OE is high. Write cycles can be initiated using either WE  
or CE, with the address input being latched on the falling  
http://onsemi.com  
5
CAT28C16A  
DATA Polling  
complement of that data on I/O (I/O –I/O are  
7
0
6
DATA polling is provided to indicate the completion of a  
byte write cycle. Once a byte write cycle is initiated,  
attempting to read the last byte written will output the  
indeterminate) until the programming cycle is complete.  
Upon completion of the selftimed byte write cycle, all I/O’s  
will output true data during a read cycle.  
t
WC  
ADDRESS  
t
AS  
t
t
DL  
AH  
t
CW  
CE  
OE  
t
OEH  
t
OES  
t
CH  
t
CS  
WE  
HIGHZ  
DATA OUT  
DATA IN  
DATA VALID  
t
t
DS  
DH  
Figure 6. Byte Write Cycle [CE Controlled]  
ADDRESS  
CE  
WE  
OE  
t
OEH  
t
OES  
t
OE  
t
WC  
I/O  
7
D
OUT  
= X  
D
OUT  
= X  
D
IN  
= X  
Figure 7. DATA Polling  
Hardware Data Protection  
The following is a list of hardware data protection features  
that are incorporated into the CAT28C16A.  
a write sequence, after V has reached 3.0 V  
min.  
CC  
1. V sense provides for write protection when V  
3. Write inhibit is activated by holding any one of  
OE low, CE high or WE high.  
CC  
CC  
falls below 3.0 V min.  
2. A power on delay mechanism, t  
(see AC  
4. Noise pulses of less than 20 ns on the WE or CE  
inputs will not result in a write cycle.  
INIT  
characteristics), provides a 5 to 20 ms delay before  
http://onsemi.com  
6
CAT28C16A  
PACKAGE DIMENSIONS  
PLCC 32  
CASE 776AK01  
ISSUE O  
PIN#1 IDENTIFICATION  
E1  
E
E2  
D1  
D
A2  
A3  
TOP VIEW  
END VIEW  
SYMBOL  
MIN  
NOM  
MAX  
b1  
A2  
A3  
b
0.38  
2.54  
2.80  
0.54  
0.33  
b1  
D
0.66  
0.82  
12.32  
11.36  
9.56  
12.57  
11.50  
11.32  
15.11  
14.04  
13.86  
b
e
D1  
D2  
E
D2  
SIDE VIEW  
14.86  
13.90  
12.10  
E1  
E2  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC MS-016.  
e
1.27 BSC  
http://onsemi.com  
7
CAT28C16A  
PACKAGE DIMENSIONS  
SOIC24, 300 mils  
CASE 751BK01  
ISSUE O  
SYMBOL  
MIN  
NOM  
MAX  
2.65  
0.30  
2.55  
0.51  
0.33  
15.40  
10.51  
7.60  
2.35  
A
A1  
A2  
b
0.10  
2.05  
0.31  
0.20  
15.20  
10.11  
7.34  
E1  
E
c
D
E
E1  
e
1.27 BSC  
h
0.25  
0.40  
0º  
0.75  
1.27  
8º  
L
b
e
θ
PIN#1 IDENTIFICATION  
5º  
15º  
θ1  
TOP VIEW  
h
D
h
q1  
A2  
q
A
q1  
L
c
A1  
SIDE VIEW  
END VIEW  
Notes:  
(1) All dimensions are in millimeters. Angles in degrees.  
(2) Complies with JEDEC MS-013.  
http://onsemi.com  
8
CAT28C16A  
PACKAGE DIMENSIONS  
PDIP24, 600 mils  
CASE 646AD01  
ISSUE A  
SYMBOL  
MIN  
NOM  
MAX  
A
A1  
A2  
b
6.35  
0.39  
3.18  
0.36  
4.95  
0.55  
1.77  
0.38  
32.25  
E1  
E
b1  
c
0.77  
0.21  
D
31.50  
E
E1  
e
15.24  
12.32  
15.87  
14.73  
D
2.54 BSC  
TOP VIEW  
15.24  
2.93  
17.78  
5.08  
eB  
L
A2  
A
c
L
A1  
b1  
e
b
eB  
SIDE VIEW  
END VIEW  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC MS-011.  
http://onsemi.com  
9
CAT28C16A  
Example of Ordering Information  
Prefix  
Device #  
Suffix  
CAT  
28C16A  
N
I
20  
T
Temperature Range  
Speed  
Tape & Reel (Note 15)  
Company ID  
(Optional)  
Product Number  
T: Tape & Reel  
28C16A  
Blank = Commercial (0°C to +70°C)  
I = Industrial (40°C to +85°C)  
A = Automotive (40°C to +105°C)  
90: 90 ns  
12: 120 ns  
20: 200 ns  
Package  
N: PLCC  
J: SOIC (JEDEC)  
K: SOIC (EIAJ)  
L: PDIP (Lead Free, Halogen Free)  
G: PLCC (Lead Free, Halogen Free)  
W: SOIC (JEDEC) (Lead Free, Halogen Free)  
X: SOIC (EIAJ) (Lead Free, Halogen Free)  
14.The device used in the above example is a CAT28C16ANI20T (PLCC, Industrial Temperature, 200 ns Access Time, Tape & Reel).  
15.For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
CAT28C16A/D  
 

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