CM1293-04SO [ONSEMI]

8-Channel Low Capacitance ESD Protection Array;
CM1293-04SO
型号: CM1293-04SO
厂家: ONSEMI    ONSEMI
描述:

8-Channel Low Capacitance ESD Protection Array

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CM1293  
8-Channel Low  
Capacitance ESD  
Protection Arrays  
Product Description  
http://onsemi.com  
The CM1293 family of diode arrays has been designed to provide  
ESD protection for electronic components or subsystems requiring  
minimal capacitive loading. These devices are ideal for protecting  
systems with high data and clock rates or for circuits requiring low  
capacitive loading. Each ESD channel consists of a pair of diodes in  
series which steer the positive or negative ESD current pulse to either  
MSOP10  
MR SUFFIX  
CASE 846AE  
the positive (V ) or negative (V ) supply rail. A Zener diode is  
P
N
embedded between V and V , offering two advantages. First, it  
P
N
protects the V rail against ESD strikes, and second, it eliminates the  
BLOCK DIAGRAM  
CC  
need for a bypass capacitor that would otherwise be needed for  
absorbing positive ESD strikes to ground. The CM1293 will protect  
against ESD pulses up to (8 kV contact discharge) per the  
IEC 6100042Level 4 standard.  
CH8  
CH7  
V
P
CH6 CH5  
This device is particularly wellsuited for protecting systems using  
®
highspeed ports such as USB2.0, IEEE1394 (FireWire , i.LINKt),  
Serial ATA, DVI, HDMI and corresponding ports in removable  
storage, digital camcorders, DVDRW drives and other applications  
where extremely low loading capacitance with ESD protection are  
required in a small package footprint.  
CH1 CH2  
V
CH3  
CH4  
N
CM129308MR  
MARKING DIAGRAM  
Features  
Eight Channels of ESD Protection  
Note: For 2 and 4 Channel Devices, See the CM1293A Datasheet  
Provides ESD Protection to IEC6100042  
D039  
8 kV Contact Discharge  
Low Loading Capacitance of 2.0 pF Max  
Low Clamping Voltage  
Channel I/O to I/O Capacitance 1.5 pF Typical  
Zener Diode Protects Supply Rail and Eliminates the Need for  
External ByPass Capacitors  
Each I/O Pin Can Withstand over 1000 ESD Strikes*  
These Devices are PbFree and are RoHS Compliant  
D039  
= CM129308MR  
ORDERING INFORMATION  
Device  
CM129308MR  
Package  
Shipping  
MSOP10 4000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Applications  
DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,  
LCD Displays  
Serial ATA Ports in Desktop PCs and Hard Disk Drives  
PCI Express Ports  
General Purpose HighSpeed Data Line ESD Protection  
*Standard test condition is IEC6100042 level 4 test circuit with each pin subjected to 8 kV contact discharge for 1000 pulses. Discharges  
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production  
test to verify that all of the tested parameters are within spec after the 1000 strikes.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
March, 2011 Rev. 4  
CM1293/D  
CM1293  
PACKAGE / PINOUT DIAGRAM  
Table 1. PIN DESCRIPTIONS  
8Channel, 10Lead MSOP10 Package  
Top View  
Pin  
1
Name  
CH1  
CH2  
CH3  
CH4  
Type  
I/O  
Description  
ESD Channel  
1
2
3
4
5
10  
9
8
7
6
CH8  
CH7  
CH1  
CH2  
CH3  
CH4  
V
P
2
I/O  
ESD Channel  
CH6  
CH5  
3
I/O  
ESD Channel  
V
N
4
I/O  
ESD Channel  
10Lead MSOP10  
5
V
GND  
I/O  
Negative Voltage Supply Rail  
ESD Channel  
N
6
CH5  
CH6  
7
I/O  
ESD Channel  
8
V
PWR  
I/O  
Positive Voltage Supply Rail  
ESD Channel  
P
9
CH7  
CH8  
10  
I/O  
ESD Channel  
SPECIFICATIONS  
Table 2. ABSOLUTE MAXIMUM RATINGS  
Parameter  
Rating  
6.0  
Units  
V
Operating Supply Voltage (V V )  
P
N
Operating Temperature Range  
40 to +85  
65 to +150  
°C  
°C  
V
Storage Temperature Range  
DC Voltage at any Channel Input  
(V 0.5) to (V + 0.5)  
N P  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
Table 3. STANDARD OPERATING CONDITIONS  
Parameter  
Rating  
Units  
°C  
Operating Temperature Range  
Package Power Rating  
40 to +85  
mW  
MSOP10 Package (CM129308MR)  
400  
http://onsemi.com  
2
CM1293  
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)  
Symbol  
Parameter  
Operating Supply Voltage (V V )  
Conditions  
Min  
Typ  
Max  
5.5  
Units  
V
V
P
3.3  
P
N
I
Operating Supply Current  
(V V ) = 3.3 V  
8.0  
mA  
V
P
P
N
V
Diode Forward Voltage  
Top Diode  
Bottom Diode  
I = 8 mA, T = 25°C  
F A  
F
0.60  
0.60  
0.80  
0.80  
0.95  
0.95  
I
Channel Leakage Current  
Channel Input Capacitance  
T = 25°C, V = 5 V, V = 0 V  
0.1  
1.0  
1.0  
1.5  
mA  
pF  
pF  
pF  
LEAK  
A
P
N
C
At 1 MHz, V = 3.3 V, V = 0 V, V = 1.65 V  
P N IN  
IN  
DC  
IN  
MUTUAL  
Channel Input Capacitance Matching  
At 1 MHz, V = 3.3 V, V = 0 V, V = 1.65 V  
0.02  
0.11  
P
N
IN  
C
Mutual Capacitance between Signal  
Pin and Adjacent Signal Pin  
At 1 MHz, V = 3.3 V, V = 0 V, V = 1.65 V  
P N IN  
V
ESD  
ESD Protection  
kV  
Peak Discharge Voltage at any  
Channel Input, in System  
Contact Discharge per  
IEC 6100042 Standard  
T = 25°C (Notes 3 and 4)  
A
8
V
CL  
Channel Clamp Voltage  
Positive Transients  
Negative Transients  
T = 25°C, I = 1 A, t = 8/20 mS  
V
A
PP  
P
(Note 4)  
+8.8  
1.4  
R
Dynamic Resistance  
Positive Transients  
Negative Transients  
I
= 1 A, t = 8/20 mS  
W
DYN  
PP  
P
Any I/O Pin to Ground (Note 4)  
0.7  
0.4  
1. All parameters specified at T = 40°C to +85°C unless otherwise noted.  
A
2. Human Body Model per MILSTD883, Method 3015, C  
= 100 pF, R  
= 1.5 KW, V = 3.3 V, V grounded.  
Discharge  
Discharge P N  
4. These measurements performed with no external capacitor on V (V floating).  
Discharge P N  
3. Standard IEC 6100042 with C  
= 150 pF, R  
= 330 W, V = 3.3 V, V grounded.  
Discharge  
P
P
http://onsemi.com  
3
 
CM1293  
PERFORMANCE INFORMATION  
Input Channel Capacitance Performance Curves  
Figure 1. Typical Variation of CIN vs. VIN  
(f = 1 MHz, VP = 3.3 V, VN = 0 V, 0.1 mF Chip Capacitor between VP and VN, 255C)  
Figure 2. Typical Variation of CIN vs. Temp  
(f = 1 MHz, VIN = 30 mV, VP = 3.3 V, VN = 0 V, 0.1 mF Chip Capacitor between VP and VN)  
http://onsemi.com  
4
CM1293  
PERFORMANCE INFORMATION (Cont’d)  
Typical Filter Performance (Nominal Conditions unless Specified Otherwise, 50 W Environment)  
Figure 3. Insertion Loss (S21) vs. Frequency (0 VDC Bias, VP = 3.3 V)  
Figure 4. Insertion Loss (S21) vs. Frequency (2.5 VDC Bias, VP = 3.3 V)  
http://onsemi.com  
5
CM1293  
APPLICATION INFORMATION  
Design Considerations  
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic  
series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically  
a connector) and the ESD protection device. Refer to Application of Positive ESD Pulse between Input Channel and Ground,  
which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to power  
supply is represented by L and L . The voltage V on the line being protected is:  
1
2
CL  
V
CL  
= Fwd Voltage Drop of D + V  
+ L x d(I  
) / dt + L x d(I  
) / dt  
1
SUPPLY  
1
ESD  
2
ESD  
where I  
is the ESD current pulse, and V  
is the positive supply voltage.  
ESD  
SUPPLY  
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge  
per the IEC6100042 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(I  
)/dt can be  
ESD  
9  
approximated by DI  
/Dt, or 30/(1x10 ). So just 10 nH of series inductance (L and L combined) will lead to a 300 V  
ESD  
1
2
increment in V  
!
CL  
Similarly for negative ESD pulses, parasitic series inductance from the V pin to the ground rail will lead to drastically  
N
increased negative voltage on the line being protected.  
The CM1293 has an integrated Zener diode between V and V . This greatly reduces the effect of supply rail inductance  
P
N
L on V by clamping V at the breakdown voltage of the Zener diode. However, for the lowest possible V , especially when  
2
CL  
P
CL  
V is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 mF ceramic chip  
P
capacitor be connected between V and the ground plane.  
P
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected  
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the V pin of the Protection  
P
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the  
ESD device to minimize stray series inductance.  
L
2
V
CC  
POSITIVE SUPPLY RAIL  
V
P
PATH OF ESD CURRENT PULSE I  
ESO  
LINE BEING  
PROTECTED  
SYSTEM OR  
CIRCUITRY  
BEING  
L
1
D
D
1
0.22 mF  
CHANNEL  
INPUT  
ONE  
CHANNEL  
PROTECTED  
2
V
CL  
25 A  
0 A  
GROUND RAIL  
V
N
CHASSIS GROUND  
Figure 5. Application of Positive ESD Pulse between Input Channel and Ground  
http://onsemi.com  
6
CM1293  
PACKAGE DIMENSIONS  
MSOP 10, 3x3  
CASE 846AE01  
ISSUE O  
SYMBOL  
MIN  
NOM  
MAX  
A
A1  
A2  
b
1.10  
0.15  
0.95  
0.27  
0.23  
3.10  
5.05  
3.10  
0.00  
0.75  
0.17  
0.13  
2.90  
4.75  
2.90  
0.05  
0.85  
c
D
3.00  
4.90  
E
E1  
E
E1  
e
3.00  
0.50 BSC  
0.60  
L
0.40  
0.80  
L1  
L2  
θ
0.95 REF  
0.25 BSC  
0º  
8º  
DETAIL A  
TOP VIEW  
D
A2  
A
END VIEW  
c
A1  
e
b
q
SIDE VIEW  
L2  
Notes:  
(1) All dimensions are in millimeters. Angles in degrees.  
(2) Complies with JEDEC MO-187.  
L
L1  
DETAIL A  
FireWire is a registered trademark of Apple Computer, Inc.; i.LINK is a trademark of Sony Corporation.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
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Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
CM1293/D  

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