CPH3123-TL-E [ONSEMI]

双极晶体管,(-)50V,(-)3A,低饱和压,(PNP)NPN 单 CPH3;
CPH3123-TL-E
型号: CPH3123-TL-E
厂家: ONSEMI    ONSEMI
描述:

双极晶体管,(-)50V,(-)3A,低饱和压,(PNP)NPN 单 CPH3

晶体管
文件: 总7页 (文件大小:645K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : EN7221B  
CPH3123/CPH3223  
Bipolar Transistor  
http://onsemi.com  
(–)  
(–)  
(
) (  
)
50V,  
3A, Low V  
CE  
sat , PNP NPN Single CPH3  
Applications  
DC-DC converters, relay drivers, lamp drivers, motor drivers, ash  
Features  
Adoption of MBIT processes  
Large current capacity  
Low collector-to-emitter saturation voltage  
High-speed switching  
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)  
High allowable power dissipation  
( ): CPH3123  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(--50)100  
(--50)100  
(--)50  
(--)6  
CBO  
V
V
CES  
V
V
CEO  
V
V
EBO  
I
C
(--)3  
A
Collector Current (Pulse)  
Base Current  
I
(--)6  
A
CP  
I
B
(--)600  
0.9  
mA  
W
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
When mounted on ceramic substrate (600mm2×0.8mm)  
C
Tj  
150  
C
°
°
Tstg  
--55 to +150  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: CPH3  
7015A-003  
• JEITA, JEDEC  
: SC-59, TO-236, SOT-23  
• Minimum Packing Quantity : 3,000 pcs./reel  
CPH3123-TL-E  
CPH3223-TL-E  
Packing Type: TL  
Marking  
2.9  
0.15  
0.05  
3
TL  
1
2
CPH3123  
CPH3223  
0.95  
1 : Base  
2 : Emitter  
3 : Collector  
0.4  
Electrical Connection  
3
3
CPH3  
1
1
2
2
CPH3123  
CPH3223  
Semiconductor Components Industries, LLC, 2013  
September, 2013  
70412 TKIM/N1504 TSIM TB-00000301/71002 TSIM TA-100095, 3619 No.7221-1/7  
CPH3123/CPH3223  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
(--)1  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
V
=(--)40V, I =0A  
A
A
μ
μ
CBO  
CB E  
I
V
=(--)4V, I =0A  
(--)1  
560  
EBO  
EB C  
h
V
CE  
=(--)2V, I =(--)100mA  
200  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
V
=(--)10V, I =(--)500mA  
(390)380  
(24)13  
MHz  
pF  
mV  
mV  
V
T
CE C  
Cob  
V
CB  
=(--)10V, f=1MHz  
V
(sat)1  
(sat)2  
(sat)  
I
C
=(--)1A, I =(--)50mA  
(--115)90  
(--240)160  
(--)0.88  
(--230)130  
(--650)240  
(--)1.2  
CE  
B
Collector-to-Emitter Saturation Voltage  
V
I =(--)2A, I =(--)100mA  
C B  
CE  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-On Time  
V
I =(--)2A, I =(--)100mA  
C B  
BE  
V
I
C
=(--)10 A, I =0A  
(--50)100  
(--50)100  
(--)50  
V
μ
(BR)CBO  
E
V
I
C
=(--)100 A,R =0  
V
μ
Ω
(BR)CES  
BE  
=
V
I
C
=(--)1mA, R  
V
(BR)CEO  
BE  
V
I =(--)10 A, I =0A  
E
(--)6  
V
μ
(BR)EBO  
C
t
t
t
(30)35  
(230)300  
(18)25  
ns  
on  
Storage Time  
See specied Test Circuit.  
ns  
stg  
f
Fall Time  
ns  
Switching Time Test Circuit  
I
I
B1  
B1  
PW=20μs  
D.C.1%  
PW=20μs  
OUTPUT  
OUTPUT  
D.C.1%  
I
I
B2  
B2  
INPUT  
INPUT  
R
R
B
B
V
V
R
R
R
R
L
L
50Ω  
50Ω  
+
+
+
+
100μF  
470μF  
100μF  
= --5V  
470μF  
V
=5V  
BE  
V
= --25V  
V
V =25V  
CC  
CC  
BE  
I = --10I =10I = --1A  
I =10I = --10I =1A  
C B1 B2  
C
B1  
B2  
CPH3123  
CPH3223  
Ordering Information  
Device  
CPH3123-TL-E  
CPH3223-TL-E  
Package  
CPH3  
Shipping  
memo  
Pb Free  
Pb Free  
3,000pcs./reel  
3,000pcs./reel  
CPH3  
I
C
-- V  
I
C
-- V  
CE  
CE  
--2.0  
5.0  
CPH3123  
CPH3223  
--1.8  
--1.6  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
--2mA  
--0.2  
0
0.5  
0
I =0  
I =0  
B
B
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0  
-- V IT04564  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
Collector-to-Emitter Voltage, V  
CE  
Collector-to-Emitter Voltage, V  
-- V IT04565  
CE  
No.7221-2/7  
CPH3123/CPH3223  
I
C
-- V  
I
C
-- V  
BE  
BE  
--3.0  
--2.5  
--2.0  
--1.5  
--1.0  
3.0  
CPH3123  
= --2V  
CPH3223  
V =2V  
CE  
V
CE  
2.5  
2.0  
1.5  
1.0  
--0.5  
0
0.5  
0
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
-- V  
--1.2  
IT04566  
0
0.2  
0.4  
0.6  
0.8  
1.0  
-- V  
1.2  
IT04567  
Base-to-Emitter Voltage, V  
Base-to-Emitter Voltage, V  
BE  
BE  
h
-- I  
h
-- I  
FE C  
FE  
C
1000  
1000  
CPH3223  
CPH3123  
V
=2V  
V
= --2V  
CE  
CE  
7
5
7
5
3
2
3
2
--25°C  
100  
100  
7
7
5
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
5
--0.01  
--0.1  
--1.0  
0.01  
0.1  
1.0  
Collector Current, I -- A  
IT04568  
Collector Current, I -- A  
IT04569  
C
C
f
-- I  
f
-- I  
T C  
T
C
1000  
1000  
CPH3123  
CPH3223  
7
5
7
5
V
= --10V  
V
=10V  
CE  
CE  
3
2
3
2
100  
7
5
100  
7
5
3
2
3
10  
0.01  
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0  
2
3
5
--0.01  
--0.1  
--1.0  
0.1  
Collector Current, I -- A  
IT04570  
Collector Current, I -- A  
IT04571  
C
C
Cob -- V  
Cob -- V  
CB  
CB  
100  
100  
CPH3123  
f=1MHz  
CPH3223  
f=1MHz  
7
5
7
5
3
2
3
2
10  
7
5
10  
--1.0  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
100  
--10  
--100  
IT04572  
0.1  
1.0  
10  
Collector-to-Base Voltage, V  
-- V  
Collector-to-Base Voltage, V  
CB  
-- V  
IT04573  
CB  
No.7221-3/7  
CPH3123/CPH3223  
V
(sat) -- I  
V
(sat) -- I  
CE  
CE  
C
C
5
5
CPH3123  
CPH3223  
3
2
I
/ I =20  
I
/ I =20  
C
B
C
B
3
2
--1000  
7
5
100  
3
2
7
5
--100  
7
5
3
2
3
2
--10  
10  
2
3
5
5
5
7
2
3
5
7
2
2
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
--0.01  
--0.1  
--1.0  
--10  
IT04574  
0.01  
0.1  
1.0  
10  
IT04575  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
V
(sat) -- I  
CE  
V
(sat) -- I  
CE  
C
C
7
5
7
5
CPH3123  
/ I =50  
CPH3223  
I / I =50  
C
I
C
B
B
3
2
3
2
--1000  
7
5
100  
3
2
7
5
--100  
7
5
3
2
3
2
--10  
10  
2
3
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
1.0  
2
3
5
--0.01  
--0.1  
--1.0  
--10  
IT04576  
0.01  
0.1  
Collector Current, I -- A  
Collector Current, I -- A  
IT04577  
C
C
V
(sat) -- I  
BE  
V
(sat) -- I  
BE  
C
C
3
3
CPH3123  
/ I =50  
CPH3223  
I
I
/ I =50  
C
B
C
B
2
2
--1.0  
1.0  
7
5
7
5
3
3
2
3
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
--0.01  
--0.1  
--1.0  
--10  
IT04578  
0.01  
0.1  
1.0  
10  
IT04579  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
A S O  
P
-- Ta  
C
1.0  
10  
I
=6A  
<50μs  
CPH3123 / CPH3223  
7
5
CP  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
I =3A  
C
3
2
1.0  
7
5
3
2
0.1  
7
5
CPH3123 / CPH3223  
Ta=25°C  
3
2
Single pulse  
0.1  
0
For PNP, minus sign is omitted.  
Mounted on a ceramic board (600mm2  
×
0.8mm)  
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
100  
-- V IT04580  
Collector-to-Emitter Voltage, V  
Ambient Temperature, Ta -- °C  
IT04581  
CE  
No.7221-4/7  
CPH3123/CPH3223  
Embossed Taping Specication  
CPH3123-TL-E, CPH3223-TL-E  
No.7221-5/7  
CPH3123/CPH3223  
Outline Drawing  
Land Pattern Example  
CPH3123-TL-E, CPH3223-TL-E  
Mass (g) Unit  
Unit: mm  
0.013  
mm  
* For reference  
0.6  
0.95  
0.95  
No.7221-6/7  
CPH3123/CPH3223  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No.7221-7/7  

相关型号:

CPH3140

High-Voltage Switching Applications
SANYO

CPH3140-TL-E

Bipolar Transistor, (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3
ONSEMI

CPH3143

CPH3143 / CPH3243
SANYO

CPH3144

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
SANYO

CPH3144_11

DC / DC Converter Applications
SANYO

CPH3145

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
SANYO

CPH3145-TL-E

Low VCE(sat) Bipolar Transistor, PNP, -50V, -2A
ONSEMI

CPH3146

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
SANYO

CPH3147

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
SANYO

CPH3148

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SANYO

CPH3151

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SANYO

CPH3152

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SANYO