CPH3362-TL-W [ONSEMI]
Single P-Channel Power MOSFET;
| 型号： | CPH3362-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | Single P-Channel Power MOSFET |
| 文件： | 总5页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2321A
CPH3362
Power MOSFET
http://onsemi.com
100V, 1.7Ω, 0.7A, Single P-Channel
Features
On-resistance R (on)1=1.3Ω (typ)
Halogen free compliance
DS
4V drive
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Value
100
20
Unit
V
V
DSS
V
GSS
V
I
I
0.7
A
D
Drain Current (Pulse)
Power Dissipation
PW10s, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm)
2.8
A
DP
P
1
W
C
C
D
Junction Temperature
Storage Temperature
Tj
150
Tstg
55 to +150
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Value
125
Unit
Junction to Ambient
R
C/W
JA
When mounted on ceramic substrate (900mm20.8mm)
Electrical Characteristics at Ta 25C
Value
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
=1mA, V =0V
GS
100
V
A
A
V
BR DSS
D
I
I
V
V
V
V
=-100V, V =0V
GS
-1
DSS
DS
GS
DS
DS
=±16V, V =0V
DS
10
GSS
V
GS
(th)
=10V, I =1mA
1.2
2.6
D
Forward Transconductance
g
FS
=10V, I =0.3A
1.0
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=0.7A, V =10V
GS
1.3
1.4
1.7
1.96
2.1
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
=0.3A, V =4.5V
GS
=0.3A, V =4V
GS
1.45
142
12
Input Capacitance
Ciss
pF
pF
pF
Output Capacitance
Coss
Crss
V
=20V, f=1MHz
DS
Reverse Transfer Capacitance
7.3
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72314HK TC-00003137/40914TKIM PE No.A2321-1/5
CPH3362
Continued from preceding page.
Value
Typ
Parameter
Symbol
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
t (on)
3.9
ns
ns
ns
ns
nC
nC
nC
V
d
t
3.4
28
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
t
12
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
3.7
Qgs
Qgd
V =50V, V =10V, I =0.7A
DS GS
0.37
0.86
0.83
D
V
SD
I =0.7A, V =0V
S GS
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Packing Type:TL
Marking
Shipping
note
Device
Package
Pb-Free
and
Halogen Free
CPH3, SC-59
SOT-23, TO-236
3,000
pcs. / reel
CPH3362-TL-W
TL
Electrical Connection
Switching Time Test Circuit
No.A2321-2/5
CPH3362
No.A2321-3/5
CPH3362
No.A2321-4/5
CPH3362
Package Dimensions
CPH3362-TL-W
CPH3
CASE 318BA
ISSUE O
unit : mm
1: Gate
2: Source
3: Drain
Recommended Soldering
Footprint
0.6
0.95
0.95
Note on usage : Since the CPH3362 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
PS No.A2321-5/5
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