CPH3457-TL-W [ONSEMI]
N 沟道，功率 MOSFET，30V，3A，95mΩ;
| 型号： | CPH3457-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，30V，3A，95mΩ |
| 文件： | 总5页 (文件大小：1010K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1804B
CPH3457
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 3A, 95m , Single CPH3
Features
•
ON-resistance R (on)1=73m (typ.)
1.8V drive
Halogen free compliance
Protection diode in
Ω
DS
•
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Value
Unit
V
V
V
30
DSS
GSS
±12
V
I
I
3
A
D
Drain Current (Pulse)
Power Dissipation
PW≤10μs, duty cycle 1%
12
1.0
A
≤
DP
P
When mounted on ceramic substrate (900mm2 0.8mm)
W
°C
°C
×
D
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH3
7015A-004
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
CPH3457-TL-H
CPH3457-TL-W
Packing Type: TL
Marking
2.9
0.15
0.05
3
TL
1
2
0.95
1 : Gate
0.4
Electrical Connection
2 : Source
3 : Drain
3
CPH3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK TC-00003117/90110TKIM PE No. A1804-1/5
CPH3457
at Ta=25°C
Electrical Characteristics
Value
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
V
I
I
=1mA, V =0V
30
(BR)DSS
D
GS
V
V
V
V
I
=30V, V =0V
1
A
A
m
DSS
GSS
DS
GS
DS
DS
GS
I
=±8V, V =0V
±10
1.3
m
DS
V
g
=10V, I =1mA
0.4
V
(th)
GS
D
Forward Transconductance
=10V, I =1.5A
2.7
S
FS
D
R
(on)1
DS
(on)2
DS
(on)2
DS
=1.5A, V =4.5V
73
95
95
133
203
m
Ω
Ω
Ω
D
GS
Static Drain-to-Source On-State Resistance
R
R
I
D
I
D
=0.75A, V =2.5V
m
m
GS
=0.3A, V =1.8V
135
265
35
GS
Input Capacitance
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
pF
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
28
t
t
t
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
5.1
10
(on)
d
r
Turn-OFF Delay Time
Fall Time
137
36
(off)
d
f
Total Gate Charge
Qg
V
V
V
=15V, V =4.5V, I =3A
GS
3.5
0.57
0.93
0.87
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
=15V, V =4.5V, I =3A
GS
D
=15V, V =4.5V, I =3A
GS
D
V
I =3A, V =0V
GS
1.2
SD
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
=15V
DD
V
IN
4.5V
0V
I
=1.5A
D
R =10Ω
L
V
V
D
IN
OUT
PW=10ms
D.C.≤1%
G
P. G
50Ω
CPH3457
S
Ordering Information
Device
Package
CPH3
Shipping
memo
CPH3457-TL-H
3,000pcs./reel
Pb-Free and Halogen Free
CPH3457-TL-W
No. A1804-2/5
CPH3457
I
-- V
I
-- V
GS(th)
D
DS
D
6
5
4
3
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ta=25°C
V
=10V
DS
1
0
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, V
-- V
IT15268
Gate-to-Source Voltage, V
GS
-- V
HD15269
DS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
300
250
200
150
100
250
200
150
100
Ta=25°C
I
=0.3A
D
0.75A
1.5A
50
0
50
0
0
2
4
6
8
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT15790
Ambient Temperature, Ta -- °C
IT15791
GS
g
-- I
I
-- V
FS
D
S
SD
7
5
7
5
V
=10V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
3
2
1.0
0.1
7
5
7
5
3
2
0.01
3
2
7
5
3
2
0.1
0.01
0.001
2
3
5
7
2
3
5
7
1.0
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
HD15273
0.1
Drain Current, I -- A
HD15272
Forward Diode Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
7
5
f=1MHz
V
V
=15V
=4.5V
DD
GS
Ciss
3
2
100
7
5
100
3
2
7
5
10
3
2
7
5
t (on)
d
3
2
10
2
3
5
7
2
3
5
7
1
2
3
4
5
6
7
8
9
10
0.1
1.0
Drain Current, I -- A
IT15274
Drain-to-Source Voltage, V
DS
-- V
IT15275
D
No. A1804-3/5
CPH3457
S O A
V
-- Qg
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2
V
=15V
DS
I
=12A (PW≤10ms)
DP
I
=3A
D
10
7
5
I =3A
D
3
2
1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
0.1
7
5
Ta=25°C
3
0.5
0
2 Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT15276
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0.1
1.0
10
-- V HD15792
Drain-to-Source Voltage, V
DS
Total Gate Charge, Qg -- nC
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
HD15789
No. A1804-4/5
CPH3457
Outline Drawing
Land Pattern Example
CPH3457-TL-H, CPH3457-TL-W
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.6
0.95
0.95
Note on usage : Since the CPH3457 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1804-5/5
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