CPH3910-TL-E [ONSEMI]
N 沟道 JFET,25V,20 至 40mA,40mS,CPH3;型号: | CPH3910-TL-E |
厂家: | ONSEMI |
描述: | N 沟道 JFET,25V,20 至 40mA,40mS,CPH3 |
文件: | 总5页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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N-Channel JFET
25 V, 20 to 40 mA, 40 mS, CPH3
CPH3
CASE 318BA
CPH3910
ELECTRICAL CONNECTION
Features
• V
: −25 V max.
• ⎢y ⎥: 40 mS typ.
GDS
3
fs
1: Source
2: Drain
3: Gate
• C : 6.0 pF typ.
iss
• N : 2.1 dB typ.
F
1
2
• This is a Pb−Free Device
Applications
MARKING DIAGRAM
• For AM Tuner RF Amplification
• Low Noise Amplifier
ABSOLUTE MAXIMUM RATINGS (at T = 25°C)
A
Symbol
Parameter
Drain−to−Source Voltage
Gate−to−Drain Voltage
Gate Current
Ratings
Unit
V
V
25
−25
DSX
GDS
V
V
I
G
10
mA
mA
mW
°C
ORDERING INFORMATION
I
D
Drain Current
50
†
Device
CPH3910−TL−E
Package
Shipping
3 000 /
Tape & Reel
P
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
400
CPH3
(Pb−Free)
T
j
150
T
stg
−55 to +150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (at T = 25°C)
A
Symbol
Parameter
Gate−to−Drain Breakdown Voltage
Gate Cutoff Current
Test Conditions
= −10 mA, V = 0 V
Min
Typ
Max
Unit
V
V
I
−25
(BR)GDS
G
DS
I
V
V
V
V
V
V
V
= −10 V, V = 0 V
−1.0
−1.8
40
nA
V
GSS
GS
DS
DS
DS
DS
DS
DS
DS
V
GS
(off)
Cutoff Voltage
= 5 V, I = 100 mA
−0.6
20
−1.2
D
I
Drain Current
= 5 V, V = 0 V
mA
mS
pF
pF
dB
DSS
GS
⎢y ⎥
fs
Forward Transfer Admittance
Input Capacitance
= 5 V, V = 0 V, f = 1 kHz
30
40
6.0
2.3
2.1
GS
C
= 5 V, V = 0 V, f = 1 MHz
GS
iss
rss
C
Reverse Transfer Capacitance
Noise Figure
= 5 V, V = 0 V, f = 1 MHz
GS
N
= 5 V, V = 0 V,
2.8
F
GS
f = 100 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2022 − Rev. 2
CPH3910/D
CPH3910
TYPICAL PERFORMANCE CHARACTERISTICS
30
25
20
15
40
V
GS
= 0 V
35
V
= 0 V
GS
30
25
20
−0.2 V
−0.2 V
−0.4 V
−0.6 V
−0.4 V
−0.6 V
15
10
5
10
5
−0.8 V
−1.0 V
−0.8 V
−1.0 V
0
0
0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
V
DS
, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
V
DS
, Drain−to−Source Voltage (V)
Figure 2. ID − VDS
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
T = −25°C
A
V
DS
= 5 V
V
DS
= 5 V
25°C
I
= 40 mA
DSS
75°C
30 mA
20 mA
0
−2.0
0
−2.0
−1.5
−1.0
−0.5
0
0.5
−1.5
−1.0
−0.5
0
0.5
V
GS
, Gate−to−Source Voltage (V)
V
GS
, Gate−to−Source Voltage (V)
Figure 3. ID − VGS
Figure 4. ID − VGS
100
7
100
V
= 5 V
V
V
= 5 V
= 0 V
DS
DS
f = 1 kHz
= 30 mA
GS
7
5
5
I
f = 1 kHz
DSS
3
2
10
7
3
2
5
3
2
10
10
1.0
1.0
2
3
5
7
2
3
5
7
2
3
5
7
10
100
100
I , Drain Current (mA)
D
I
, Drain Current (mA)
DSS
Figure 5. XyfsX − ID
Figure 6. XyfsX − IDSS
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2
CPH3910
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10
7
10
7
V
= 5 V
= 100 mA
DS
V
= 0 V
GS
I
D
5
f = 1 MHz
3
2
5
1.0
7
3
2
5
3
2
1.0
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
10
100
10
100
I
, Drain Current (mA)
V
DS
, Drain−to−Source Voltage (V)
Figure 8. Ciss − VDS
DSS
Figure 7. VGS(off) − IDSS
10
450
V
= 0 V
GS
400
350
300
250
200
150
100
50
f = 1 MHz
7
5
3
2
1.0
1.0
0
2
3
5
7
2
3
5
7
10
100
0
20
40
60
80
100 120
140 160
V
DS
, Drain−to−Source Voltage (V)
T , Ambient Temperature (5C)
A
Figure 9. Crss − VDS
Figure 10. PD − TA
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH3
CASE 318BA
ISSUE O
DATE 30 NOV 2011
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65437E
CPH3
PAGE 1 OF 1
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