CPH3910-TL-E [ONSEMI]

N 沟道 JFET,25V,20 至 40mA,40mS,CPH3;
CPH3910-TL-E
型号: CPH3910-TL-E
厂家: ONSEMI    ONSEMI
描述:

N 沟道 JFET,25V,20 至 40mA,40mS,CPH3

文件: 总5页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
N-Channel JFET  
25 V, 20 to 40 mA, 40 mS, CPH3  
CPH3  
CASE 318BA  
CPH3910  
ELECTRICAL CONNECTION  
Features  
V  
: 25 V max.  
y : 40 mS typ.  
GDS  
3
fs  
1: Source  
2: Drain  
3: Gate  
C : 6.0 pF typ.  
iss  
N : 2.1 dB typ.  
F
1
2
This is a PbFree Device  
Applications  
MARKING DIAGRAM  
For AM Tuner RF Amplification  
Low Noise Amplifier  
ABSOLUTE MAXIMUM RATINGS (at T = 25°C)  
A
Symbol  
Parameter  
DraintoSource Voltage  
GatetoDrain Voltage  
Gate Current  
Ratings  
Unit  
V
V
25  
25  
DSX  
GDS  
V
V
I
G
10  
mA  
mA  
mW  
°C  
ORDERING INFORMATION  
I
D
Drain Current  
50  
Device  
CPH3910TLE  
Package  
Shipping  
3 000 /  
Tape & Reel  
P
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
400  
CPH3  
(PbFree)  
T
j
150  
T
stg  
55 to +150  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS (at T = 25°C)  
A
Symbol  
Parameter  
GatetoDrain Breakdown Voltage  
Gate Cutoff Current  
Test Conditions  
= 10 mA, V = 0 V  
Min  
Typ  
Max  
Unit  
V
V
I
25  
(BR)GDS  
G
DS  
I
V
V
V
V
V
V
V
= 10 V, V = 0 V  
1.0  
1.8  
40  
nA  
V
GSS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
V
GS  
(off)  
Cutoff Voltage  
= 5 V, I = 100 mA  
0.6  
20  
1.2  
D
I
Drain Current  
= 5 V, V = 0 V  
mA  
mS  
pF  
pF  
dB  
DSS  
GS  
y ⎥  
fs  
Forward Transfer Admittance  
Input Capacitance  
= 5 V, V = 0 V, f = 1 kHz  
30  
40  
6.0  
2.3  
2.1  
GS  
C
= 5 V, V = 0 V, f = 1 MHz  
GS  
iss  
rss  
C
Reverse Transfer Capacitance  
Noise Figure  
= 5 V, V = 0 V, f = 1 MHz  
GS  
N
= 5 V, V = 0 V,  
2.8  
F
GS  
f = 100 MHz  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
February, 2022 Rev. 2  
CPH3910/D  
CPH3910  
TYPICAL PERFORMANCE CHARACTERISTICS  
30  
25  
20  
15  
40  
V
GS  
= 0 V  
35  
V
= 0 V  
GS  
30  
25  
20  
0.2 V  
0.2 V  
0.4 V  
0.6 V  
0.4 V  
0.6 V  
15  
10  
5
10  
5
0.8 V  
1.0 V  
0.8 V  
1.0 V  
0
0
0
0.5  
1.0  
1.5  
2.0  
0
2
4
6
8
10  
V
DS  
, DraintoSource Voltage (V)  
Figure 1. ID VDS  
V
DS  
, DraintoSource Voltage (V)  
Figure 2. ID VDS  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T = 25°C  
A
V
DS  
= 5 V  
V
DS  
= 5 V  
25°C  
I
= 40 mA  
DSS  
75°C  
30 mA  
20 mA  
0
2.0  
0
2.0  
1.5  
1.0  
0.5  
0
0.5  
1.5  
1.0  
0.5  
0
0.5  
V
GS  
, GatetoSource Voltage (V)  
V
GS  
, GatetoSource Voltage (V)  
Figure 3. ID VGS  
Figure 4. ID VGS  
100  
7
100  
V
= 5 V  
V
V
= 5 V  
= 0 V  
DS  
DS  
f = 1 kHz  
= 30 mA  
GS  
7
5
5
I
f = 1 kHz  
DSS  
3
2
10  
7
3
2
5
3
2
10  
10  
1.0  
1.0  
2
3
5
7
2
3
5
7
2
3
5
7
10  
100  
100  
I , Drain Current (mA)  
D
I
, Drain Current (mA)  
DSS  
Figure 5. XyfsX ID  
Figure 6. XyfsX IDSS  
www.onsemi.com  
2
CPH3910  
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)  
10  
7
10  
7
V
= 5 V  
= 100 mA  
DS  
V
= 0 V  
GS  
I
D
5
f = 1 MHz  
3
2
5
1.0  
7
3
2
5
3
2
1.0  
1.0  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
10  
100  
10  
100  
I
, Drain Current (mA)  
V
DS  
, DraintoSource Voltage (V)  
Figure 8. Ciss VDS  
DSS  
Figure 7. VGS(off) IDSS  
10  
450  
V
= 0 V  
GS  
400  
350  
300  
250  
200  
150  
100  
50  
f = 1 MHz  
7
5
3
2
1.0  
1.0  
0
2
3
5
7
2
3
5
7
10  
100  
0
20  
40  
60  
80  
100 120  
140 160  
V
DS  
, DraintoSource Voltage (V)  
T , Ambient Temperature (5C)  
A
Figure 9. Crss VDS  
Figure 10. PD TA  
www.onsemi.com  
3
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
CPH3  
CASE 318BA  
ISSUE O  
DATE 30 NOV 2011  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON65437E  
CPH3  
PAGE 1 OF 1  
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
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