CPH6904 [ONSEMI]
N-Channel JFET 25V, 20 to 40mA, 40mS, Dual CPH6; N沟道JFET 25V ， 20至40mA ， 40微秒，双CPH6
| 型号： | CPH6904 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel JFET 25V, 20 to 40mA, 40mS, Dual CPH6 |
| 文件： | 总6页 (文件大小：501K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1966A
CPH6904
N-Channel JFET
25V, 20 to 40mA, 40mS, Dual CPH6
http://onsemi.com
Features
•
Composite type with 2 J-FET contained in a CPH6 package currently in use, improving the mounting efficiency
greatly
•
The CPH6904 is formed with two chips, being equivalent to the CPH3910, placed in one package
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
25
--25
10
DSX
V
V
GDS
I
mA
mA
mW
mW
°C
G
Drain Current
I
50
D
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
P
P
1unit
400
700
150
D
T
Tch
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH6
7018A-015
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
CPH6904-TL-E
2.9
0.15
0.05
Packing Type: TL
Marking
6
5
4
3
TL
1
2
0.95
1 : Drain1
0.4
2 : NC
3 : Drain2
Electrical Connection
4 : Gate2
5
4
6
5 : Source1/Source2
6 : Gate1
CPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
62012 TKIM/11112AC TKIM TC-00002641 No. A1966-1/6
CPH6904
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
=--10 A, V =0V
Unit
min
--25
max
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
V
nA
V
μ
(BR)GDS
G
DS
I
V
=--10V, V =0V
--1.0
GSS
(off)
GS
DS
=5V, I =100
V
V
A
μ
--0.6
20.0
30
--1.2
--1.8
40.0
GS
DS
D
Drain Current
I
V
=5V, V =0V
DS GS
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
V
=5V, V =0V, f=1kHz
GS
40
6.0
2.3
2.1
|
|
DS
Ciss
Crss
NF
V
=5V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
Noise Figure
V
=5V, V =0V, f=100MHz
GS
2.8
DS
The specifications shown above are for each individual J-FET.
Ordering Information
Device
Package
CPH6
Shipping
memo
CPH6904-TL-E
3,000pcs./reel
Pb Free
I
-- V
DS
I
-- V
D
D DS
30
25
20
15
10
40
35
30
25
20
15
10
5
5
0
--1.0V
0
0
0
0.5
1.0
1.5
2.0
IT16677
2
4
6
8
10
Drain-to-Source Voltage, V
DS
-- V
Drain-to-Source Voltage, V
DS
-- V
IT16678
No. A1966-2/6
CPH6904
I
D
-- V
GS
I
-- V
D GS
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
V
=5V
V
=5V
DS
DS
5
0
5
0
--2.0
--1.5
--1.0
--0.5
0
0.5
IT16679
--2.0
--1.5
--1.0
--0.5
0
0.5
IT16680
Gate-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
GS
GS
| yfs | -- I
| yfs | -- I
D
DSS
100
100
V
=5V
V
V
=5V
=0V
DS
f=1kHz
DS
GS
7
5
7
5
I
=30mA
f=1kHz
DSS
3
2
10
3
2
7
5
3
2
1.0
1.0
10
2
3
5
7
2
3
5
7
2
3
5
7
10
100
10
100
IT16682
Drain Current, I -- mA
Drain Current, I -- mA
DSS
IT16681
D
V
GS
(off) -- I
Ciss -- V
DSS
DS
10
10
V
=5V
V
=0V
DS
GS
f=1MHz
7
I =100μA
D
5
7
3
2
5
1.0
3
2
7
5
3
2
1.0
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
10
100
IT16683
10
100
IT16684
Drain Current, I
DSS
-- mA
Drain-to-Source Voltage, V
-- V
DS
P
P
-- Ta
Crss -- V
D,
T
DS
10
800
700
600
500
400
300
200
V
=0V
GS
f=1MHz
P
T
7
5
1unit
3
2
100
0
1.0
0
20
40
60
80
100
120
140
160
2
3
5
7
2
3
5
7
1.0
10
100
IT16685
Ambient Temperature, Ta -- °C
IT16686
Drain-to-Source Voltage, V
DS
-- V
No. A1966-3/6
CPH6904
Embossed Taping Specification
CPH6904-TL-E
No. A1966-4/6
CPH6904
Outline Drawing
Land Pattern Example
CPH6904-TL-E
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A1966-5/6
CPH6904
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PS No. A1966-6/6
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