D45C11 [ONSEMI]
PNP 电流驱动器晶体管;
| 型号： | D45C11 |
| 厂家： | 
ONSEMI |
| 描述： | PNP 电流驱动器晶体管 驱动 晶体管 驱动器 |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2010
D45C11
PNP Current Driver Transistor
Features
• This device is designed for power amplifier, regulator and switching
circuits where speed is important.
• Sourced from Process 5P.
• NZT751 for characteristics.
TO-220
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
VCEO
Parameter
Value
-80
Units
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
V
A
IC
-4.0
TJ, TSTG
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
60
W
Derate above 25°C
480
mW/°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.1
°C/W
°C/W
62.5
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
www.fairchildsemi.com
1
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
ICES
Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0
-80
V
Collector-Cutoff Current
Emitter-Cutoff Current
VCE = -90V, IE = 0
VEB = -5.0V, IB = 0
-10
μA
μA
IEBO
-100
On Characteristics
hFE
DC Current Gain
VCE = -1.0V, IC = -0.2A
VCE = -1.0V, IC = -1.0A
40
20
120
VCE (sat)
VBE (sat)
Small Signal Characteristics
Collector-Emitter Saturation Voltage IC = -1.0A, IB = -50mA
-0.5
-1.3
V
V
Base-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
Cob
fT
Output Capacitance
Current Gain - Bandwidth Product
VCB = -10V, f = 1.0MHz
IC = -20mA, VCE = -4.0V
125
pF
32
MHz
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
www.fairchildsemi.com
2
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Definition of Terms
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Datasheet contains the design specifications for product development. Specifications may change in
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Advance Information
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First Production
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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