ECH8315-TL-H [ONSEMI]
P 沟道，功率 MOSFET，-30V，-7.5A，25mΩ;
| 型号： | ECH8315-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-30V，-7.5A，25mΩ PC |
| 文件： | 总7页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
P-Channel
V
R
Max
I Max
D
DSS
DS(on)
25 mW @ −10 V
44 mW @ −4.5 V
49 mW @ −4 V
−7.5 A
−30 V
-30 V, 25 mW, -7,5 A
ECH8315
Description
This Power MOSFET is produced using onsemi’s trench
technology, which is specifically designed to low on resistance.
This devices is suitable for applications with low on resistance
requirements.
SOT−28FL/ECH8
CASE 318BF
Features
ELECTRICAL CONNECTION
• Low On−Resistance
• 4 V Drive
• ESD Diode−Protected Gate
• Pb−Free, Halogen Free and RoHS Compliant
P−Channel
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Typical Applications
• Load Switch
• Protection Switch for Lithium−ion Battery
• Motor Driver
1
2
3
4
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Value
−30
20
Unit
V
MARKING DIAGRAM
V
DSS
GSS
V
V
I
D
−7.5
−40
A
JS
Lot No.
Drain Current (Pulse)
PW ≤ 10 ms, duty cycle ≤ 1%
I
A
DP
Power Dissipation
P
D
1.5
W
When mounted on ceramic substrate
2
(900 mm x 0.8 mm)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5
of this data sheet.
Junction Temperature
Storage Temperature
Tj
Tstg
150
°C
°C
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
Junction to Ambient
R
83.3
°C/W
θ
JA
When mounted on ceramic substrate
2
(900 mm x 0.8 mm)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2023 − Rev 3
ECH8315/D
ECH8315
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Value
Typ
−
Min
−30
−
Max
−
Parameter
Symbol
Conditions
Unit
V
Drain to Source Breakdown Voltage
Zero−Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
I = −1 mA, V = 0 V
D GS
(BR)DSS
I
V
V
V
V
= −30 V, V = 0 V
−
−1
10
−2.6
−
mA
mA
V
DSS
GSS
DS
GS
DS
DS
GS
I
=
16 V, V = 0 V
−
−
DS
V
GS(th)
= −10 V, I = −1 mA
−1.2
5
−
D
Forward Transconductance
g
FS
= −10 V, I = −3.5 A
8.4
19
S
D
Static Drain to Source On−State
R
I
D
I
D
I
D
= −3.5 A, V = −10 V
−
25
44
49
−
mΩ
mΩ
mΩ
pF
DS(on)
GS
Resistance
= −2 A, V = −4.5 V
−
31
GS
= −2 A, V = −4 V
−
35
GS
Input Capacitance
C
V
DS
= −10 V, f = 1 MHz
−
875
200
150
8.1
33
iss
Output Capacitance
Reverse Transfer Capacitance
Turn−ON Delay Time
Rise Time
C
−
−
oss
C
−
−
rss
t
See Figure 1
−
−
ns
ns
ns
ns
nC
nC
nC
V
d(on)
t
r
−
−
Turn−OFF Delay Time
Fall Time
t
−
92
−
d(off)
t
f
−
60
−
Total Gate Charge
Qg
−
18
−
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
V
DS
= −15 V, V = −10 V, I = −7.5 A
−
2.1
4.7
−0.82
−
GS
D
−
−
V
SD
I
S
= −7.5 A, V = 0 V
−
−1.2
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
V
DD
=−15V
V
IN
0V
−10V
I =−3.5A
R =4.3W
L
D
V
IN
V
OUT
D
PW=10ms
D.C.v1%
G
ECH8315
P.G
50W
S
Figure 1. Switching Time Test Circuit 1
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2
ECH8315
TYPICAL CHARACTERISTICS
−7.5
−7.0
−6.5
−6.0
−5.5
−5.0
−4.5
−4.0
−3.5
−3.0
−2.5
−2.0
−1.5
−1.0
−0.5
0
−10
−15.0 V
−10.0 V
−6.0 V
−4.5 V
−4.0 V
−3.5 V
V
DS
= −10 V
−9
−8
−7
−6
−5
−4
−3.0 V
Ta = −25°C
Ta = 25°C
−3
−2
−1
0
V
GS
= −2.5 V
T = 75°C
A
Ta = 25°C
−0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1.0
0
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
−3.5
V
GS
, Gate to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Figure 2. ID − VDS
Figure 3. ID − VGS
80
70
60
50
40
30
20
70
60
50
40
30
20
Ta = 25°C
I
D
= −2 A
V
GS
= −4.0 V, I = −2.0 A
D
I
D
= −3.5 A
V
GS
= −4.5 V, I = −2.0 A
D
V
GS
= −10.0 V, I = −3.5 A
D
10
0
10
0
0
−2
−4
−6
−8
−10 −12
−14
−16
−60 −40 −20
0
20 40 60 80 100 120 140 160
V
GS
, Gate to Source Voltage (V)
TA, Ambient Temperature (°C)
Figure 5. RDS(on) − TA
Figure 4. RDS(on) − VGS
3
2
2
V
= 0 V
GS
V
= −10 V
DS
−10
7
5
10
7
5
3
2
Ta = 75°C
Ta = −25°C
Ta = 25°C
3
2
−1.0
7
5
25°C
3
2
1.0
7
5
Ta = −25°C
75°C
−0.1
7
5
3
2
3
2
0.1
7
−0.01
−0.01
5
7
2
3
5
7
2
3
5
7
2
3
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−0.1
−1.0
−10
I , Drain Current (A)
D
V
SD
, Forward Diode Voltage (V)
Figure 6. gFS − ID
Figure 7. IS − VSD
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3
ECH8315
TYPICAL CHARACTERISTICS (continued)
3
2
3
f = 1 MHz
V
DD
V
GS
= −15 V
= −10 V
2
t (off)
d
100
1000
C
iss
7
5
t
f
7
5
3
2
3
2
t
r
C
C
oss
rss
10
7
t (on)
d
100
5
−0.1
7
2
3
5
7
2
3
7
5
−1.0
I , Drain Current (A)
−10
0
−5
−10
, Drain to Source Voltage (V)
DS
−15
−20
−25
−30
V
D
Figure 8. SW Time − ID
Figure 9. Ciss, Coss, Crss − VDS
−100
−10
−9
7
5
I
= −40 A (PW≤10 ms)
= −7.5 A
D
V
I
= −10 V
= −7.5 A
DP
DS
3
2
D
100 ms
1 ms
10 ms
−8
−7
−6
−5
−4
−3
−2
I
−10
7
5
3
2
100 ms
−1.0
7
5
DC operation
(Ta = 25°C)
Operation in this area
is limited by R
.
3
DS(on)
2
−0.1
7
5
3
2
Ta = 25°C
Single pulse
−1
2
When mounted on ceramic substrate (900mm ×0.8mm)
0
−0.01
2
3
5 7 5 7 5 7 5
2
3
2
3
2
3
0
2
4
6
8
10
12
14
16
18
−0.01
−0.1
−1.0
−10
Qg, Total Gate Charge (nC)
VDS, Drain to Source Voltage (V)
Figure 11. SOA
Figure 10. VGS − Qg
1.8
When mounted on ceramic substrate
(900 mm ×0.8 mm)
1.6
1.5
1.4
2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120 140
160
T , Ambient Temperature (5C)
A
Figure 12. PD − Ta
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4
ECH8315
TYPICAL CHARACTERISTICS (CONTINUED)
100
7
Duty Cycle = 0.5
5
3
2
0.2
0.1
0.05
10
7
5
3
0.02
2
1.0
7
0.01
5
3
2
0.1
7
5
3
2
When mounted on ceramic substrate
(900 mm ×0.8 mm)
Single Pulse
2
0.01
0.000001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PT, Pulse Time (s)
Figure 13. R
− Pulse Time
q
JA
ORDERING INFORMATION
Product Number
†
Marking
Package
SOT−28FL / ECH8
Shipping (Qty / Packing)
ECH8315−TL−H
JS
3000 / Tape and Reel
(Pb−Free / Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Note on usage : Since the ECH8315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−28FL / ECH8
CASE 318BF
ISSUE O
DATE 31 MAR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON78700E
SOT−28FL / ECH8
PAGE 1 OF 1
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