ECH8420-TL-H [ONSEMI]
N 沟道，功率 MOSFET，20V，14A，6.8mΩ;
| 型号： | ECH8420-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，20V，14A，6.8mΩ |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, N-Channel
20 V, 14 A, 6.8 mW, Single ECH8
SOT−28FL / ECH8
CASE 318BF
ECH8420
Features
• ON−resistance
• 1.8 V Drive
R
(on)1 = 5.2 mW (Typ.)
DS
MARKING DIAGRAM
• Protection Diode in
• This Device is Pb−Free and Halide Free
ZA
Lot No.
ELECTRICAL CONNECTION
8
7
6
5
Package Dimension
Unit : mm (typ)
7011A−002
ECH8420−TL−H
TopView
1
2
3
4
2.9
0.15
8
5
0 to 0.02
PACKING TYPE: TL
4
1
0.65
0.3
TL
ORDERING INFORMATION
†
Device
Package
Shipping
3000 /
Tape & Reel
ECH8420−TL−H SOT−28FL / ECH8
(Pb−Free,
Halide Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ECH8
Bottom View
Figure 1. Package Dimensions
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2022 − Rev. 2
ECH8420/D
ECH8420
Specifications
ABSOLUTE MAXIMUM RATINGS at T = 25°C
A
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
DSS
V
GSS
20
12
V
I
D
14
50
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW ≤ 10 ms, duty cycle ≤ 1%
When mounted on ceramic substrate (900 mm × 0.8 mm)
A
DP
2
P
D
1.6
W
°C
°C
T
ch
150
T
stg
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS at T = 25°C
A
Ratings
Min
20
−
Typ
−
Max
−
Parameter
Symbol
Conditions
I = 1 mA, V = 0 V
D
Unit
V
Drain−to−Source Breakdown Voltage
Zero−Gate Voltage Drain Current
Gate−to−Source Leakage Current
Cutoff Voltage
V
(BR)DSS
GS
I
V
V
V
V
I
= 20 V, V = 0V
−
1
mA
mA
V
DSS
GSS
DS
GS
DS
DS
GS
I
=
8 V, V = 0 V
−
−
10
1.3
−
DS
V
GS
(off)
= 10 V, I = 1 mA
0.4
−
−
D
Forward Transfer Admittance
| yfs |
= 10 V, I = 7 A
14.5
5.2
8
S
D
Static Drain−to−Source On−State
R
R
R
(on)1
= 7 A, V = 4.5 V
−
6.8
11.5
22.5
−
mW
mW
mW
pF
pF
pF
ns
DS
DS
DS
D
GS
Resistance
(on)2
(on)3
I
D
I
D
= 4 A, V = 2.5 V
−
GS
= 2 A, V = 1.8 V
−
15
GS
Input Capacitance
Ciss
V
DS
= 10 V, f = 1 MHz
−
2430
410
330
21
Output Capacitance
Reverse Transfer Capacitance
Turn−ON Delay Time
Rise Time
Coss
Crss
−
−
−
−
t (on)
d
See specified Test Circuit.
−
−
t
r
−
88
−
ns
Turn−OFF Delay Time
Fall Time
t (off)
−
210
115
29
−
ns
d
t
f
−
−
ns
Total Gate Charge
Qg
V
D
= 10 V, V = 4.5 V,
−
−
nC
nC
nC
V
DS
GS
I
= 14 A
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
−
4.8
8.7
0.75
−
−
−
V
SD
I = 14 A, V = 0 V
S
−
1.2
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
ECH8420
Switching Time Test Circuit
V
IN
V
DD
= 10 V
4.5 V
0 V
I
D
= 7 A
V
IN
R = 1.43 W
L
D
V
OUT
PW = 10 ms
D.C. ≤ 1%
G
ECH8420
50 W
P.G
S
Figure 2. Switching Time Test Circuit
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3
ECH8420
TYPICAL CHARACTERISTICS
14
12
10
8
21
20
19
18
17
16
15
14
13
12
11
10
9
V
DS
= 10 V
1.8 V
10.0 V
2.5 V
4.5 V
6.0 V
8.0 V
6
T
A
= 75°C
8
7
4
6
V
GS
= 1.5 V
5
4
25°C
2
0
3
−25°C
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0.1
0.2
0.3
0.4
0.5
0.6 0.7
0.8 0.9
1.0
V , Drain−to−Source Voltage (V)
DS
V , Gate−to−Source Voltage (V)
GS
Figure 3. ID − VDS
Figure 4. ID − VGS
25
20
15
10
40
T
A
= 25°C
I
= 2 A
D
35
30
25
20
15
10
4 A
7 A
V
GS
= 1.8 V, I = 2 A
D
V
GS
= 2.5 V, I = 4 A
D
5
0
V
GS
= 4.5 V, I = 7 A
D
5
0
2
−50
0
50
100
150
200
0
4
6
8
10
12
V , Gate−to−Source Voltage (V)
GS
T , Ambient Temperature (ꢁC)
A
Figure 5. RDS(on) − VGS
Figure 6. RDS(on) − TA
100
100
7
7
5
3
2
V
= 0 V
V
= 10 V
GS
DS
5
3
2
1.0
7
5
3
2
25°C
10
7
5
T
= −25°C
A
1.0
75°C
7
5
3
2
3
2
T
= 75°C
A
−25°C
0.1
7
5
3
2
1.0
7
5
25°C
0.01
7
5
3
2
3
2
0.1
0.01
0.001
2
2
2
2
3
3
5 7
3
5 7
3
5 7
5 7
100
0
0.1
0.2 0.3 0.4 0.5 0.6
0.7 0.8 0.9 1.0
10
0.1
1.0
V
SD
, Diode Forward Voltage (V)
I , Drain Current (A)
D
Figure 7. ꢀyfsꢀ − ID
Figure 8. IS − VSD
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4
ECH8420
TYPICAL CHARACTERISTICS (continued)
1000
10000
V
DD
V
GS
= 15 V
= 10 V
f = 1 MHz
7
5
7
5
Ciss
3
2
3
2
t (off)
d
t
f
100
7
1000
7
5
5
Coss
Crss
t
r
3
2
3
2
t (on)
d
100
10
2
5
2
5
2
5
7
3
7
3
7
3
0.1
1.0
10
100
0
10
2
4
6
8
12
14
16
18
20
V , Drain−to−Source Voltage (V)
DS
I , Drain Current (A)
D
Figure 9. SW Time − ID
Figure 10. Ciss, Coss, Crss − VDS
100
7
4.5
4.0
3.5
I
= 50 A (PW ≤ 10 ms)
DP
V
I
= 10 V
= 14 A
5
DS
1 ms
10 ms
3
D
I
= 14 A
D
2
10
7
100 ms
5
3.0
2.5
3
2
1.0
7
2.0
1.5
Operation in this
area is limited by R (on).
5
3
DS
2
DC operation (T = 25°C)
0.1
7
A
1.0
0.5
5
T
= 25°C
A
3
Single pulse
2
2
When mounted on ceramic substrate (900 mm × 0.8 mm)
0.01
0
7
7
7
7
5
100
2
5
2
5
2
5
2
3
3
3
3
1.0
10
0.1
0.1
15
0
5
10
20
25
30
Q , Total Gate Charge (nC)
g
V , Drain−to−Source (V)
DS
Figure 11. VGS − Qg
Figure 12. ASO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900 mm × 0.8 mm)
2
0.2
0
0
20
40
60
80
100
120
140
160
T , Ambient Temperature (ꢁC)
A
Figure 13. PD − TA
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−28FL / ECH8
CASE 318BF
ISSUE O
DATE 31 MAR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON78700E
SOT−28FL / ECH8
PAGE 1 OF 1
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