ECH8667-TL-H [ONSEMI]
双 P 沟道,功率 MOSFET,-30V,-5.5A,39mΩ;型号: | ECH8667-TL-H |
厂家: | ONSEMI |
描述: | 双 P 沟道,功率 MOSFET,-30V,-5.5A,39mΩ 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:308K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1778A
ECH8667
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 5.5A, 39m , Dual ECH8
Features
•
ON-resistance R (on)1=30m (typ.)
Ω
DS
•
•
•
4V drive
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
V
±20
V
GSS
I
--5.5
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
--40
A
≤
μ
≤
DP
P
P
1.3
W
W
°C
°C
×
D
T
1.5
×
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8667-TL-H
Top View
2.9
Packing Type : TL
Marking
0.15
8
5
TN
0 to 0.02
TL
LOT No.
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/72110PE TKIM TC-00002432 No. A1778-1/7
ECH8667
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 30V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =-- 2.5A
5.2
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 2.5A, V =-- 10V
GS
30
55
39
77
82
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=-- 1.5A, V =-- 4.5V
GS
=-- 1.5A, V =-- 4V
GS
58
Input Capacitance
Ciss
600
145
110
7.2
23
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
t
t
t
t
(on)
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
63
ns
d
f
42
ns
Total Gate Charge
Qg
13
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--5.5A
GS
1.8
3.2
--0.82
DS
D
V
SD
I =--5.5A, V =0V
S GS
--1.2
Switching Time Test Circuit
V
IN
V = --15V
DD
0V
--10V
I
= --2.5A
D
V
IN
R =6Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ECH8667
P. G
50Ω
S
Ordering Information
Device
Package
ECH8
Shipping
3,000pcs./reel
memo
ECH8667-TL-H
Pb Free and Halogen Free
No. A1778-2/7
ECH8667
I
D
-- V
DS
I
-- V
D GS
--3.0
--2.5
--2.0
--1.5
--1.0
--9
--8
--7
--6
--5
--4
--3
--2
V
DS
= --10V
--0.5
0
--1
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
DS
-- V
IT14855
Gate-to-Source Voltage, V
GS
-- V
IT14856
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
200
180
160
140
120
100
80
100
90
80
70
60
50
40
30
Ta=25°C
I
= --1.5A
D
--3.0A
60
40
20
10
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
IT15727
Ambient Temperature, Ta -- °C
IT15728
| yfs | -- I
I
-- V
D
S SD
2
2
V
=0V
V
= --10V
GS
DS
--10
7
5
3
2
10
7
5
--1.0
3
2
7
5
3
2
1.0
7
--0.1
7
5
5
3
2
3
2
--0.01
7
5
3
2
0.1
7
--0.001
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT14860
--0.01
--0.1
Drain Current, I -- A
IT14859
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
100
2
f=1MHz
t
d(off)
7
5
1000
t
f
7
5
3
2
3
2
10
7
5
100
V
V
= --15V
= --10V
7
5
DD
GS
3
2
3
5
7
2
3
5
7
2
0
--5
--10
--15
--20
--25
--30
IT14862
--0.1
--1.0
--10
IT14861
Drain Current, I -- A
Drain-to-Source Voltage, V -- V
DS
D
No. A1778-3/7
ECH8667
A S O
V
-- Qg
GS
--10
--9
--8
--7
--6
--5
--4
--3
--2
--100
V
= --10V
7
DS
= --6A
I
= --40A (PW≤10μs)
DP
5
I
D
3
2
--10
7
5
I = --5.5A
D
3
2
--1.0
7
5
Operation in this
3
2
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--1
0
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
--0.01
--0.1
2
3
5
7
2
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10 11 12 13
IT14863
--1.0
--10
Drain-to-Source Voltage, V
DS
-- V
IT15729
Total Gate Charge, Qg -- nC
P
-- Ta
D
1.8
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15730
No. A1778-4/7
ECH8667
Embossed Taping Specification
ECH8667-TL-H
No. A1778-5/7
ECH8667
Outline Drawing
Land Pattern Example
ECH8667-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1778-6/7
ECH8667
Note on usage : Since the ECH8667 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1778-7/7
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