ECH8690-TL-H [ONSEMI]
互补，双功率 MOSFET 60V;
| 型号： | ECH8690-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | 互补，双功率 MOSFET 60V |
| 文件： | 总8页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2185B
ECH8690
Power MOSFET
60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8
http://onsemi.com
Features
• On-State Resistance Nch:RDS(on)1=42mΩ(typ.)
Pch:RDS(on)1=73mΩ(typ.)
• 4V drive
• Protection diode in
• Halogen free compliance
• Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
60
20
P-channel
Unit
V
V
-60
20
DSS
V
I
V
GSS
4.7
30
-3.5
-30
A
D
Drain Current (Pulse)
I
PW≤10μs, duty cycle≤1%
A
DP
When mounted on ceramic substrate
(1200mm2×0.8mm)1unit
Allowable Power Dissipation
Total Dissipation
P
1.5
1.8
W
W
D
T
When mounted on ceramic substrate
(1200mm2×0.8mm)
P
Channel Temperature
Storage Temperature
Tch
150
°C
°C
Tstg
- 55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Ordering & Package Information
Device
Package
Shipping
note
Pb-Free
and
Halogen Free
3000
pcs. / reel
ECH8690-TL-H
ECH8
ECH8690-TL-H
Top View
2.9
0.15
Packing Type: TL
Marking
8
5
0 to 0.02
UM
TL
LOT No.
4
1
0.65
0.3
Electrical Connection
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain2
6: Drain2
7: Drain1
8: Drain1
8
7
6
5
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
October, 2013
O1613 TKIM/61913 TKIM TC-00002960/52213TKIM TC-00002920 No.A2185-1/8
ECH8690
Electrical Characteristics at Ta = 25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V(
)
I
=1mA, V =0V
GS
60
V
μA
μA
V
BR DSS
D
I
I
V
V
V
V
=60V, V =0V
GS
1
DSS
GSS
(off)
DS
GS
DS
DS
=±16V, V =0V
DS
10
V
=10V, I =1mA
1.2
2.6
GS
D
Forward Transfer Admittance
| yfs |
=10V, I =2A
4.2
42
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I
I
I
=2A, V =10V
GS
55
74
85
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
D
D
D
Static Drain to Source On-State
Resistance
=1A, V =4.5V
GS
53
61
=1A, V =4V
GS
Input Capacitance
Ciss
955
58
Output Capacitance
Coss
Crss
V
=20V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
45
t (on)
d
7
t
8.4
76
23
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Total Gate Charge
Qg
18
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
V
=30V, V =10V, I =4.7A
DS GS
3
D
2.8
0.82
V
SD
I =4.7A, V =0V
1.2
S
GS
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V(
)
I
=-1mA, V =0V
GS
-60
V
μA
μA
V
BR DSS
D
I
I
V
V
V
V
=-60V, V =0V
GS
-1
10
DSS
GSS
(off)
DS
GS
DS
DS
=±16V, V =0V
DS
V
=-10V, I =-1mA
-1.2
-2.6
GS
D
Forward Transfer Admittance
| yfs |
=-10V, I =-1.5A
3.4
73
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I
I
I
=-1A, V =-10V
GS
94
135
153
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
D
D
D
Static Drain to Source On-State
Resistance
=-0.5A, V =-4.5V
GS
97
=-0.5A, V =-4V
GS
108
790
63
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=-20V, f=1MHz
DS
45
t (on)
d
10
t
8.8
84
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
t
29
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qg
15
Qgs
Qgd
V
=-30V, V =-10V, I =-3.5A
DS GS
2.6
2.2
-0.83
D
V
SD
I =-3.5A, V =0V
GS
-1.2
S
No.A2185-2/8
ECH8690
Switching Time Test Circuit
[N-channel]
[P-channel]
No.A2185-3/8
ECH8690
No.A2185-4/8
ECH8690
No.A2185-5/8
ECH8690
No.A2185-6/8
ECH8690
Outline Drawing
ECH8690-TL-H
Land Pattern Example
No.A2185-7/8
ECH8690
Note on usage : Since the ECH8690 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No.A2185-8/8
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