EFC4K110NUZTDG [ONSEMI]
双 N 沟道功率 MOSFET 24V，25A，2.95mΩ。;
| 型号： | EFC4K110NUZTDG |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道功率 MOSFET 24V，25A，2.95mΩ。 |
| 文件： | 总7页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFC4K110NUZ
MOSFET – Power, Dual,
N-Channel, for 1-2 Cells
Lithium-ion Battery Protection
24 V, 2.95 mW, 25 A
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Introduction
This Power MOSFET features a low on-state resistance. This device
is suitable for applications such as power switches of portable
machines. Best suited for 1-2 cells lithium-ion battery applications.
V
R
MAX
I MAX
S
SSS
SS(ON)
24 V
2.95 mW @ 4.5 V
3.0 mW @ 3.8 V
4.7 mW @ 3.1 V
7.4 mW @ 2.5 V
25 A
Features
• 2.5 V Drive
• 2 kV ESD HBM
• Common-Drain Type
ELECTRICAL CONNECTION
• ESD Diode-Protected Gate
6, 7, 9, 10
• This Device is Pb-Free, Halogen Free/BFR Free and is RoHS
Compliant
1: Source1
2: Source1
3: Gate1
Applications
8
3
4: Source1
5: Source1
6: Source2
7: Source2
8: Gate2
• 1-2 Cells Lithium-ion Battery Charging and Discharging Switch
Specifications
ABSOLUTE MAXIMUM RATINGS (T = 25°C) (Note 1)
A
9: Source2
10: Source2
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Symbol
Value
24
Unit
V
1, 2, 4, 5
N-Channel
V
SSS
GSS
V
12
V
I
S
25
A
PIN ASSIGNMENT
Source Current (Pulse)
PW ≤ 10 ms, duty cycle ≤ 1%
I
SP
100
A
1
6
3
8
2
4
7
9
Total Dissipation (Note 1)
Junction Temperature
P
2.5
W
T
T
150
°C
j
WLCSP10
(3.20 x 2.10 x 0.14)
CASE 567XT
5
10
Storage Temperature
T
stg
−55 to +150
°C
(Bottom View)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
PH
AYWZZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction to Ambient (Note 1)
R
50
°C/W
θ
JA
PH
A
Y
= Specific Device Code
= Assembly Location
= Year
2
1. Surface mounted on ceramic substrate (5000 mm × 0.8 mm).
W
ZZ
= Work Week
= Assembly Lot
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
July, 2019 − Rev. 0
EFC4K110NUZ/D
EFC4K110NUZ
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
V
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
I = 1 mA, V = 0 V
24
(BR)SSS
S
GS
I
V
= 19.2 V, V = 0 V
1
mA
mA
V
SSS
SS
GS
SS
GS
I
V
V
=
8 V, V = 0 V
10
GSS
SS
V
R
(th)
= 10 V, I = 1 mA
0.4
1.6
1.7
2.0
2.2
1.3
2.95
3.0
4.7
7.4
GS
S
Static Source to Source On-State
Resistance
(on) I = 5 A, V = 4.5 V
2.4
2.5
2.9
3.6
310
49
mW
mW
mW
mW
W
SS
S
GS
I = 5 A, V = 3.8 V
S
GS
I = 5 A, V = 3.1 V
S
GS
I = 5 A, V = 2.5 V
S
GS
Gate Resistance
Rg
Qg
t (on)
f = 1 MHz
Total Gate Charge
Turn-ON Delay Time
Rise Time
V
V
= 11.5 V, V = 4.5 V, I = 5 A
nC
ms
SS
GS
S
= 11.5 V, V = 4.5 V, R = 2.3 W
0.6
1.6
7.3
3.2
0.75
d
SS
GS
L
R
= 0 W Switching Test Circuit
G
t
r
ms
Turn-OFF Delay Time
Fall Time
t (off)
d
ms
t
f
ms
Forward Source to Source Voltage
V
F(S-S)
I = 3 A, V = 0 V
1.2
V
S
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SWITCHING TEST CIRCUIT
t (on), t , t (off), t
f
d
r
d
S2
R
L
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
R
g
V
SS
S1
Figure 1. Switching Test Circuit
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2
EFC4K110NUZ
DEPENDENCY FIGURES
6
5
10
T = 25°C
A
V
= 6 V
SS
4.5 V
4.0 V
9
8
7
6
5
Single Pulse
Single Pulse
T = 75°C
A
4
3.8 V
25°C
3
2
1
0
4
3
−25°C
V
GS
= 2.5 V
2
1
0
0.000
0.005
0.010
0.015
0.020
0.0 0.2 0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
Gate-to-Source Voltage, V (V)
Source-to-Source Voltage, V (V)
GS
SS
Figure 2. On-Region Characteristics
Figure 3. Transfer Characteristics
5.5
5.0
5.0
4.5
4.0
3.5
3.0
2.5
I
= 5 A
I
= 5 A
S
S
Single Pulse
Single Pulse
V
= 2.5 V
GS
4.5
4.0
3.1 V
T = 75°C
A
25°C
3.5
3.0
2.5
2.0
1.5
1.0
3.8 V
4.5 V
2.0
1.5
1.0
−25°C
1
2
3
4
5
6
7
8
−60 −40 −20
0
20 40 60 80 100 120 140 160
Gate-to-Source Voltage, V (V)
Ambient Temperature, T (5C)
GS
A
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Figure 5. On-Resistance vs. Temperature
10
V
= 0 V
GS
T = 25°C
A
Single Pulse
td(off)
V
V
= 11.5 V
= 4.5 V
SS
20
10
GS
T = 75°C
A
I
C
= 5 A
1
Single Pulse
25°C
−25°C
tf
0.1
tr
td(on)
0.01
0
0.2
0.3
0.4
0.5 0.6
0.7 0.8
0.9
(V)
1.0
0
200
400
600
800
1000
Gate Resistance, Rg (W)
Forward Source-to-Source Voltage, V
F(S-S)
Figure 6. Forward Source-to-Source Voltage vs. Current
Figure 7. Switching Time vs. Gate Resistance (1)
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3
EFC4K110NUZ
4.5
4.0
3.5
1000
100
10
T = 25°C
T = 25°C
A
A
V
I
= 11.5 V
V
V
= 11.5 V
SS
SS
= 5 A
= 4.5 V
S
GS
td(off)
I
C
= 5 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
tf
Single Pulse
tr
td(on)
1
1
10
Gate Resistance, Rg (kW)
0
10
20
30
40
50
60
Total Gate Charge, Qg (nC)
Figure 8. Switching Time vs. Gate Resistance (2)
Figure 9. Gate-to-Source Voltage vs.
Total Charge
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 100 A (PW ≤ 10 m)
SP
Surface mounted on
ceramic substrate
(5000 mm x 0.8 mm)
I
S
= 25 A
2
10 ms
100 ms
1 ms
1
10 ms
Operation in
this area is limited
DC Operation
100 ms
0.1
0.01
T
= 25°C
A
Single Pulse
When mounted on ceramic substrate
(5000 mm x 0.8 mm)
2
0.01
0.1
1
10
0
20
40
60
80
100 120 140 160
Source-to-Source Voltage, V (V)
SS
Ambient Temperature, T (5C)
A
Figure 10. Safe Operating Area
Figure 11. Total Dissipation vs. Temperature
100
10
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
Single Pulse
Surface mounted on ceramic substrate
(5000 mm x 0.8 mm)
2
0.1
0.00001
0.0001
0.001
0.01
Pulse Time, P (s)
0.1
1
10
T
Figure 12. Thermal Response
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4
EFC4K110NUZ
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty / Packing)
EFC4K110NUZTDG
PH
WLCSP10, 3.20 x 2.10 x 0.14
(Pb-Free / Halogen Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Note on usage: Since the EFC4K110NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP10 3.2x2.1x0.14
CASE 567XT
ISSUE O
DATE 02 APR 2019
XX
A
Y
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
= Pb−Free Package
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XX
AYWZZG
W
ZZ
G
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05933H
WLCSP10 3.2x2.1x0.14
PAGE 1 OF 1
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