EGP20B [ONSEMI]

2.0A超快速恢复整流器;
EGP20B
型号: EGP20B
厂家: ONSEMI    ONSEMI
描述:

2.0A超快速恢复整流器

功效 二极管
文件: 总5页 (文件大小:164K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Rectifiers, High Efficiency,  
Glass Passivated, 2.0ꢀA  
EGP20A - EGP20K  
AXIAL LEAD DO 204  
Features  
CASE 017AJ  
GlassPassivated CavityFree Junction  
High Surge Current Capability  
Low Leakage Current  
MARKING DIAGRAM  
SuperFast Recovery Time for High Efficiency  
Low Forward Voltage, High Current Capability  
EGP20X  
ZYWW  
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)  
A
Symbol  
Parameter  
Value  
Unit  
EGP20X  
= Specific Device Code  
X = A/B/C/D/F/G/J/K  
= Assembly Code  
I
Average Rectified Current  
0.375 inch lead length at TA = 55C  
2.0  
A
F(AV)  
Z
YWW  
= Date Code (Year & Week)  
I
Peak Forward Surge Current  
8.3 ms single halfsinewave  
Superimposed on rated load  
(JEDEC method)  
75  
A
FSM  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3  
of this data sheet.  
T , T  
Junction and Storage Temperature Range 65 to 150  
C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
3.13  
25  
Unit  
W
P
D
Total Device Dissipation  
Derate above 25C  
mWC  
C/W  
C/W  
R
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Lead  
40  
q
JA  
R
15  
q
JL  
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)  
A
Device  
20D  
20A  
50  
20B  
100  
70  
20C  
150  
105  
150  
20F  
300  
210  
300  
20G  
400  
280  
400  
20J  
20K  
800  
560  
800  
Parameter  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
Unit  
V
200  
140  
200  
600  
420  
600  
35  
V
DC Reverse Voltage (Rated V )  
50  
100  
V
R
Maximum Reverse  
T = 25_C  
A
5.0  
mA  
A
Current at Rated V  
R
T = 125_C  
100  
mA  
Maximum Reverse Recovery Time  
I = 0.5 A, I = 1.0 A, I = 0.25 A  
50  
75  
nS  
V
F
R
rr  
Maximum Forward Voltage @ 2.0 A  
Typical Junction Capacitance  
0.95  
70  
1.25  
1.7  
45  
pF  
V
R
= 4.0 V, f = 1.0 MHz  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.  
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
October, 2022 Rev. 2  
EGP20K/D  
EGP20A EGP20K  
TYPICAL PERFORMANCE CHARACTERISTICS  
90  
3
2
75  
60  
Single Phase  
Half Wave  
60 Hz  
Resistive or  
Inductive LOAD  
.375” (9.0 mm) LEAD  
Lengths  
45  
30  
1
0
15  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
5
10  
20  
50  
100  
Ambient Temperature (5C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. NonRepetitive Surge Current  
50  
10  
100  
10  
T = 150C  
A
EGP20AEGP20D  
T = 150C  
A
T = 25C  
A
1
0.1  
T = 125C  
A
1
T = 75C  
A
EGP20FEGP20K  
0.1  
0.01  
0.001  
Pulse Width = 30 ms  
2% Duty Cycle  
T = 25C  
A
0.01  
0
20  
40  
60  
80  
100  
120  
140  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Reverse Characteristics  
Forward Voltage (V)  
Figure 3. Forward Characteristics  
140  
120  
100  
80  
60  
40  
20  
0
EGP20AEGP20D  
EGP20FEGP20K  
0.1  
1
10  
100  
1000  
Reverse Voltage (V)  
Figure 5. Junction Capacitance  
www.onsemi.com  
2
EGP20A EGP20K  
Reverse Recovery Time Characteristic and Test Circuit Diagram  
t
rr  
50 W  
50 W  
Noninductive  
Noninductive  
+0.5 A  
()  
Pulse  
Generator  
(Note 2)  
DUT  
0
+
50 V  
(approx.)  
0.25 A  
50 W  
Noninductive  
Oscilloscope  
(Note 1)  
(+)  
Notes:  
1 A  
1. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF.  
2. Rise time = 10 ns max; Source impedance = 50 W.  
1 cm  
Set Time Base for  
5/10 ns/cm  
Figure 6. Test Circuit Diagram  
Figure 7. Reverse Recovery Time  
Characteristics  
ORDERING INFORMATION  
Device  
EGP20A  
EGP20B  
EGP20C  
EGP20D  
EGP20F  
EGP20G  
EGP20J  
EGP20K  
Package  
Shipping  
Axial Lead / DO204  
(PbFree)  
4000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
3
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
AXIAL LEAD DO 204  
CASE 017AJ  
ISSUE O  
DATE 30 NOV 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13437G  
AXIAL LEAD DO 204  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

EGP20B-B

Rectifier Diode,
MCC

EGP20B-E3

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

EGP20B-E3/54

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

EGP20B-E3/73

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

EGP20B-HE3

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

EGP20B-HE3/54

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

EGP20B-HE3/73

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Rectifier Diode
VISHAY

EGP20B-T

Rectifier Diode,
MCC

EGP20B/100

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

EGP20B/4E

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

EGP20B/51

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

EGP20B/53

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY