EMF18XV6T1G [ONSEMI]
Complementary Bipolar Digital Transistor (BRT);
| 型号： | EMF18XV6T1G |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Bipolar Digital Transistor (BRT) 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF18XV6T5
Dual Transistor −
Power Management
NPN/PNP Dual (Complimentary)
http://onsemi.com
Features
• Low V
, t0.5 V
CE(SAT)
(3)
(2)
(1)
Q
• These are Pb−Free Devices
R
1
MAXIMUM RATINGS
Q1
Q
1
2
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
R
2
V
V
CBO
CEO
(4)
(5)
(6)
50
Vdc
I
100
mAdc
C
Q2
Rating
Symbol
Value
−60
Unit
V
6
Collector−Emitter Voltage
Collector−Base Voltage
V
CEO
V
CBO
V
EBO
1
−50
V
Emitter−Base Voltage
−6.0
−100
V
SOT−563
CASE 463A
PLASTIC
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
mAdc
C
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T = 25°C
P
357
(Note 1)
2.9
mW
MARKING DIAGRAM
A
D
Derate above 25°C
mW/°C
°C/W
(Note 1)
Thermal Resistance,
Junction-to-Ambient
R
q
350
(Note 1)
JA
UV M G
G
Characteristic
(Both Junctions Heated)
1
Symbol
Max
Unit
Total Device Dissipation T = 25°C
P
500
(Note1)
4.0
mW
A
D
UV = Specific Device Code
Derate above 25°C
mW/°C
°C/W
°C
M
= Date Code
(Note 1)
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
Junction-to-Ambient
R
q
250
(Note 1)
JA
Junction and Storage
Temperature Range
T , T
J
−55 to +150
ORDERING INFORMATION
stg
†
Device
Package
Shipping
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
EMF18XV6T5
SOT−563 8000/Tape & Reel
(Pb−Free)
EMF18XV6T5G
SOT−563 8000/Tape & Reel
(Pb−Free)
1. FR−4 @ Minimum Pad.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005 − Rev. 1
EMF18XV6/D
EMF18XV6T5
ELECTRICAL CHARACTERISTICS (T = 25°C) (Note 2)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Q1: NPN
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
0.1
−
nAdc
nAdc
mAdc
Vdc
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter-Base Cutoff Current (V = 6.0 V, I = 0)
I
EBO
−
−
EB
C
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
80
−
−
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 4) (I = 2.0 mA, I = 0)
−
−
Vdc
C
B
DC Current Gain (V = 10 V, I = 5.0 mA)
h
FE
140
−
−
CE
C
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
0.25
0.2
−
Vdc
Vdc
Vdc
kW
C
B
Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 kW)
V
−
−
CC
B
L
OL
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
4.9
32.9
0.8
−
CC
B
L
OH
Input Resistor
Resistor Ratio
Q2: PNP
R1
R1/R2
47
1.0
61.1
1.2
Collector−Base Breakdown Voltage (I = −50 mAdc, I = 0)
V
−60
−50
−6.0
−
−
−
−
−
−
−
−
−
Vdc
Vdc
Vdc
nA
C
E
(BR)CBO
(BR)CEO
(BR)EBO
Collector−Emitter Breakdown Voltage (I = −1.0 mAdc, I = 0)
V
V
C
B
Emitter−Base Breakdown Voltage (I = −50 mAdc, I = 0)
−
E
E
Collector−Base Cutoff Current (V = −30 Vdc, I = 0)
I
CBO
−0.5
−0.5
−0.5
CB
E
Emitter−Base Cutoff Current (V = −5.0 Vdc, I = 0)
I
EBO
−
mA
EB
B
Collector−Emitter Saturation Voltage (Note 4)
V
−
Vdc
CE(sat)
(I = −50 mAdc, I = −5.0 mAdc)
C
B
DC Current Gain (Note 4) (V = −6.0 Vdc, I = −1.0 mAdc)
h
120
−
−
560
−
−
CE
C
FE
Transition Frequency (V = −12 Vdc, I = −2.0 mAdc, f = 30 MHz)
f
140
3.5
MHz
pF
CE
C
T
Output Capacitance (V = −12 Vdc, I = 0 Adc, f = 1.0 MHz)
C
−
−
CB
E
OB
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
http://onsemi.com
2
EMF18XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢀ=ꢀ−25°C
A
0.1
0.01
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. VCE(sat) versus IC
Figure 2. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T ꢀ=ꢀ−25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 3. Output Capacitance
Figure 4. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 5. Input Voltage versus Output Current
http://onsemi.com
3
EMF18XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP
1000
V
= 10 V
T = 25°C
A
CE
T = 25°C
A
120
90
T = 75°C
A
T = −25°C
A
300 mA
250
100
200
60
150
100
30
0
I = 50 mA
B
10
0.1
0
3
6
9
12
15
1
10
100
V
, COLLECTOR VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
CE
Figure 6. IC − VCE
Figure 7. DC Current Gain
2
900
T = 25°C
A
800
700
600
500
400
300
1.5
1
T = 25°C
CE
0.5
0
A
200
100
0
V
= 5 V
0.01
0.1
1
10
100
0.2 0.5
1
5
10 20 40 60 80 100 150 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 8. Collector Saturation Region
Figure 9. On Voltage
13
14
12
10
8
12
11
10
9
8
7
6
4
2
0
6
0
1
2
3
4
0
10
20
(V)
30
40
V
(V)
V
EB
CB
Figure 10. Capacitance
Figure 11. Capacitance
http://onsemi.com
4
EMF18XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
−X−
L
6
5
2
4
3
E
−Y−
H
E
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
EMF18XV6/D
相关型号：
EMF19T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明