EMH2314-TL-H [ONSEMI]
Power MOSFET, -12V, 37mΩ, -5A, Dual P-Channel;
| 型号： | EMH2314-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, -12V, 37mΩ, -5A, Dual P-Channel |
| 文件： | 总5页 (文件大小：1078K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8759A
EMH2314
Power MOSFET
http://onsemi.com
–
–
Ω
12V, 37m , 5A, Dual P-Channel
Features
•
•
•
ON-resistance R (on)1=28m (typ.)
1.8V drive
Halogen free compliance
Protection Diode in
Ω
DS
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Value
--12
Unit
V
V
V
DSS
GSS
±8
V
I
I
--5
A
D
Drain Current (Pulse)
Power Dissipation
PW 10 s, duty cycle 1%
--20
A
≤
μ
≤
DP
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
1.0
W
W
°C
°C
×
D
T
Total Dissipation
P
When mounted on ceramic substrate (900mm2 0.8mm)
1.2
×
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Value
125
Unit
C/W
Junction to Ambient
R
°
JA
θ
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
×
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: EMH8
7045-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
EMH2314-TL-H
0.2
0.125
8
5
Taping Type : TL
Marking
MP
TL
LOT No.
1
4
0.5
2.0
Electrical Connection
1 : Source1
8
7
6
5
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
1
2
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72214HK TC-00003140/51612TKIM PE No.8759-1/5
EMH2314
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
V
I
= -- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
= --12V, V =0V
I
I
V
V
V
V
I
--10
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
GSS
V
g
(th)
= --6V, I = -- 1mA
--0.4
--1.3
GS
D
Forward Transconductance
= --6V, I = --2.5A
11
S
FS
D
R
(on)1
(on)2
(on)3
= --2.5A, V = --4.5V
GS
28
53
37
75
m
Ω
m
Ω
m
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
R
R
I
I
= --1.5A, V = --2.5V
GS
D
D
= --0.5A, V = --1.8V
GS
133
1300
158
143
16
200
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
= --6V, f=1MHz
DS
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
t (on)
d
t
77
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
79
t
58
f
Total Gate Charge
Qg
12
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
V
= --6V, V = --4.5V, I = -- 5A
DS GS
3
D
2
V
I = -- 5A, V =0V
GS
--0.9
--1.2
SD
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
= --6V
V
DD
IN
0V
--4.5V
I
= --2.5A
D
V
IN
R =2.4Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
EMH2314
P. G
50Ω
S
Ordering Information
Device
Package
EMH8
Shipping
memo
EMH2314-TL-H
3,000pcs./reel
Pb-Free and Halogen Free
No.8759-2/5
EMH2314
I
-- V
I
-- V
GS
D
DS
D
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--7
--6
--5
--4
--3
--2
V
= --6V
DS
--1.6V
--1
0
--0.5
0
V
GS
= --1.3V
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
IT16894
Drain-to-Source Voltage, V
DS
-- V
IT16893
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
200
180
160
140
120
100
80
200
180
160
140
120
100
80
Ta=25°C
I
= --0.5A
D
--1.5A
--2.5A
60
60
40
40
20
0
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, V
GS
-- V
IT16895
IT16896
I
-- V
g
-- I
S
SD
FS
D
100
7
5
--10
7
5
V
=0V
V
= --6V
GS
DS
3
2
3
2
10
7
5
--1.0
7
5
3
2
3
2
1.0
7
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5 7
--10
HD16897
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--0.1
--1.0
Drain Current, I -- A
Forward Diode Voltage, V -- V
SD
HD16898
D
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
1000
10000
V
= --6V
= --4.5V
f=1MHz
DD
7
5
7
V
GS
5
3
2
3
2
1000
100
7
5
7
5
3
2
3
2
t (on)
d
100
10
--0.1
2
3
5
7
2
3
5
7
0
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12
--1.0
--10
IT16899
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
IT16900
D
No.8759-3/5
EMH2314
V
-- Qg
S O A
GS
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--100
7
V
= --6V
DS
5
3
2
I
= --5A
I
= --20A(PW≤10μs)
D
DP
--10
7
5
3
2
I = --5A
D
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
--0.1
7
5
3
2
Ta=25°C
Single pulse
--0.5
0
When mounted on ceramic substrate
(900mm2×0.8mm)
--0.01
--0.01
2
3
5
7
--0.1
2
3
5
7
2
3
5
7
2
3
5 7
--100
0
1
2
3
4
5
6
7
8
9
10 11 12
--1.0
--10
-- V HD16902
Total Gate Charge, Qg -- nC
IT16901
Drain-to-Source Voltage, V
DS
P
-- Ta
D
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
HD16903
R
-- Pulse Time
θJA
1000
100
10
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
HD
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
Pulse Time, PT -- s
No.8759-4/5
EMH2314
Outline Drawing
Land Pattern Example
EMH2314-TL-H
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.3
0.5
Note on usage : Since the EMH2314 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
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further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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copyright laws and is not for resale in any manner.
PS No.8759-5/5
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