EMT2DXV6T5G [ONSEMI]
Dual General Purpose Transistor, SOT-563, 6 LEAD, 8000-REEL;
| 型号： | EMT2DXV6T5G |
| 厂家： | 
ONSEMI |
| 描述： | Dual General Purpose Transistor, SOT-563, 6 LEAD, 8000-REEL 晶体 小信号双极晶体管 光电二极管 放大器 |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMT2DXV6T5
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
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• Lead−Free Solder Plating
(3)
(2)
(1)
• Low V
, < 0.5 V
CE(SAT)
MAXIMUM RATINGS
Rating
Symbol
Value
−60
Unit
V
Q
2
Q
1
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
V
EBO
−50
V
−6.0
−100
V
(4) (5)
(6)
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
C
mAdc
MARKING
DIAGRAM
Characteristic
(One Junction Heated)
4
5
Symbol
Max
Unit
6
3M D
Total Device Dissipation T = 25°C
P
357
(Note 1)
2.9
mW
A
D
3
2
1
Derate above 25°C
mW/°C
°C/W
SOT−563
CASE 463A
Style 2
(Note 1)
Thermal Resistance,
Junction-to-Ambient
R
350
(Note 1)
q
JA
3M = Specific Device Code
= Date Code
Characteristic
D
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation T = 25°C
P
500
(Note 1)
4.0
mW
A
D
ORDERING INFORMATION
Derate above 25°C
mW/°C
°C/W
°C
(Note 1)
Device
EMT2DXV6T5
Package
Shipping†
Thermal Resistance,
Junction-to-Ambient
R
250
(Note 1)
q
JA
SOT−563
2 mm Pitch
8000/Tape & Reel
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 @ Minimum Pad.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2004 − Rev. 0
EMT2DXV6T5/D
EMT2DXV6T5
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Symbol
Min
−60
−50
−6.0
−
Typ
−
Max
−
Unit
Vdc
Vdc
Vdc
nA
Collector−Base Breakdown Voltage (I = −50 mAdc, I = 0)
V
V
V
C
E
(BR)CBO
(BR)CEO
(BR)EBO
Collector−Emitter Breakdown Voltage (I = −1.0 mAdc, I = 0)
−
−
C
B
Emitter−Base Breakdown Voltage (I = −50 mAdc, I = 0)
−
−
E
E
Collector−Base Cutoff Current (V = −30 Vdc, I = 0)
I
CBO
−
−0.5
−0.5
CB
E
Emitter−Base Cutoff Current (V = −5.0 Vdc, I = 0)
I
EBO
−
−
mA
EB
B
Collector−Emitter Saturation Voltage (Note 2)
V
Vdc
CE(sat)
(I = −50 mAdc, I = −5.0 mAdc)
−
−
−
−0.5
560
C
B
DC Current Gain (Note 2)
(V = −6.0 Vdc, I = −1.0 mAdc)
h
FE
−
120
CE
C
Transition Frequency
(V = −12 Vdc, I = −2.0 mAdc, f = 30 MHz)
f
MHz
pF
T
−
−
140
3.5
−
−
CE
C
Output Capacitance (V = −12 Vdc, I = 0 Adc, f = 1 MHz)
C
CB
E
OB
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
EMT2DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
1000
V
CE
= 10 V
T = 25°C
A
T = 25°C
A
120
90
T = 75°C
A
T = −25°C
A
300 mA
250
100
200
60
150
100
30
0
I = 50 mA
B
10
0.1
0
3
6
9
12
15
1
10
100
V
CE
, COLLECTOR VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 1. IC − VCE
Figure 2. DC Current Gain
2
900
T = 25°C
A
800
700
600
500
400
300
1.5
1
T = 25°C
0.5
0
A
200
100
0
V
CE
= 5 V
0.01
0.1
1
10
100
0.2 0.5
1
5
10 20 40 60 80 100 150 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. On Voltage
13
14
12
11
10
12
10
8
9
8
7
6
4
2
0
6
0
1
2
3
4
0
10
20
(V)
30
40
V
EB
(V)
V
CB
Figure 5. Capacitance
Figure 6. Capacitance
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3
EMT2DXV6T5
PACKAGE DIMENSIONS
SOT−563, 6−LEAD
CASE 463A−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
A
C
−X−
K
6
5
2
4
3
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
B
−Y−
S
J
A
B
C
D
G
J
1.50
1.10
0.50
0.17
1.70 0.059 0.067
1.30 0.043 0.051
0.60 0.020 0.024
0.27 0.007 0.011
0.020 BSC
0.18 0.003 0.007
0.30 0.004 0.012
1.70 0.059 0.067
1
0.50 BSC
D 56 PL
0.08
0.10
1.50
G
M
0.08 (0.003)
X Y
K
S
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER 2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5 0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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EMT2DXV6T5/D
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