ES1D [ONSEMI]
1.0A快速恢复整流器;
| 型号： | ES1D |
| 厂家： | 
ONSEMI |
| 描述： | 1.0A快速恢复整流器 PC 光电二极管 |
| 文件： | 总6页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
1.0 A Ultra Fast Recovery
Rectifier
ES1A-ES1D
SMA
CASE 403AE
Features
(COLOR BAND DENOTES CATHODE)
• For Surface Mount Applications
• Glass Passivated Junction
• Low Profile Package
MARKING DIAGRAM
• Easy Pick and Place
• Built−in Strain Relief
• Superfast Recovery Times for High Efficiency
• This Device is Pb−Free and is RoHS Compliant
$Y&Z&3
ES1X
Applications
• This Product is General Usage and Suitable for Many Different
$Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
Applications
ES1X
X
= Specific Device Code
= A/B/C/D
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
May, 2022 − Rev. 5
ES1D/D
ES1A−ES1D
ABSOLUTE MAXIMUM RATINGS T = 25°C Unless Otherwise Noted
A
Value
1A
1B
1C
1D
Symbol
Parameter
Units
V
Maximum Repetitive Reverse Voltage
50
100
150
200
V
A
A
RRM
I
Average Rectified Forward Current, @ T = 120°C
1.0
30
F(AV)
A
I
Non−repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave
FSM
Storage Temperature Range
−50 to +150
−50 to +150
°C
°C
T
stg
T
Jm
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.47
85
Units
W
P
D
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
°C/W
°C/W
R
θ
JA
35
R
q
JL
*Device mounted on FR−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted
J
Device
1A
1B
1C
1D
Symbol
Parameter
Units
V
V
F
Forward Voltage @ 1.0 A
Reverse Recovery Time
0.92
15
t
rr
ns
I = 0.5 A, I = 1.0 A, I = 0.25 A
F
R
RR
I
mA
Reverse Current
@ rated V
R
R
5.0
100
T = 25_C
A
T = 100_C
A
C
Total Capacitance
7.0
pF
T
V
R
= 4.0 V, f = 1.0 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION TBD
†
Device Marking
ES1A
Device
ES1A
ES1B
ES1C
ES1D
Package
SMA
Quantity
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
ES1B
SMA
ES1C
SMA
ES1D
SMA
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
ES1A−ES1D
TYPICAL CHARACTERISTICS
10
1
1.5
1.25
1
0.75
0.5
0.2 5
0
0.1
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2”
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.01
T
= 25°C
A
Pulse Width = 300 ms
2% Duty Cycle
0.001
0
25
50
75
100
125
150
175
0.6
1.4
0.4
0.8
1
1.2
Ambient Temperature [5C]
Forward Voltage, V [V]
F
Figure 2. Forward Voltage Characteristics
Figure 1. Forward Current Derating Curve
1000
30
25
20
15
10
100
T
A
= 125°C
10
1
T
A
= 75°C
5
T
A
= 25°C
0.1
0
0
20
40
60
80
100
120
140
1
2
5
10
20
50
100
Percent of Rated Peak Reverse Voltage [%]
Number of Cycles at 60 Hz
Figure 3. Non−Repetitive Surge Current
Figure 4. Reverse Current vs Reverse Voltage
14
12
10
8
6
4
2
0
0.1
1
10
100
Reverse Voltage, V [V]
R
Figure 5. Total Capacitance
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3
ES1A−ES1D
TYPICAL CHARACTERISTICS (continued)
50 W
NONINDUCTIVE
50 W
NONINDUCTIVE
trr
+0.5 A
(−)
DUT
0
Pulse
Generator
(Note 2)
50 V
(approx)
−0.25 A
(+)
50 W
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
NOTES:
−1.0 A
1. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 W.
1.0 cm
SET TIME BASE FOR
5/ 10 ns/ cm
Figure 6. Reverse Recovery Time Characterstic and Test Circuit Diagram
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
5.60
4.80
M
B
B
0.13
B
C
B
A
2.65
2.95
2.50
1.65
1.20
1.75
4.30
4.75
4.00
B
A
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.30
0.05
B
DOES NOT COMPLY JEDEC STANDARD
VALUE.
0.203
0.050
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
2.05
1.95
M
0.13
C
B
A
SIDE VIEW
8 °
0 °
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8 °
0 °
DETAIL A
SCALE 20 : 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
PAGE 1 OF 1
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