ESDM1131MX4T5G [ONSEMI]

微型封装二极管，用于 ESD 防护;


型号：	ESDM1131MX4T5G
厂家：	ONSEMI
描述：	微型封装二极管，用于 ESD 防护二极管
文件：	总7页 (文件大小：312K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ESDM1131

3.3 V ESD Protection

Diodes

Micro−packaged Diodes for ESD

Protection

www.onsemi.com

The ESD1131 is designed to protect voltage sensitive components

from ESD. Excellent clamping capability, low leakage, and fast

response time provide best in class protection on designs that are

exposed to ESD. Because of its small size, it is suited for use in

smartphone, smart-watch, or many other portable / wearable

applications where board space comes at a premium.

MARKING

DIAGRAM

X4DFN2

CASE 718AA

Features

A = Specific Device Code

• Low Capacitance (4 pF, I/O to GND)

• Small Body Outline Dimensions

♦ 01005 Size: 0.445 x 0.240 mm

• Protection for the Following IEC Standards:

IEC 61000−4−2 (Level 4)

PIN CONFIGURATION

AND SCHEMATIC

• Low ESD Clamping Voltage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

−55 to +125

−55 to +150

260

Unit

°C

Operating Junction Temperature Range

Storage Temperature Range

stg

°C

Lead Solder Temperature −

Maximum (10 Seconds)

°C

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD)

ESD

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See Application Note AND8308/D for further description of

survivability specs.

Publication Order Number:

March, 2018 − Rev. 1

ESDM1131/D

ESDM1131

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

3.3

6.0

0.1

Unit

Reverse Working Voltage

Breakdown Voltage

RWM

I/O Pin to GND

I = 1 mA, I/O Pin to GND

4.0

5.0

Reverse Leakage Current

Clamping Voltage

RWM

= 3.3 V, I/O Pin to GND

= 4 A, (8x20 ms pulse)

5.6

5.5

Clamping Voltage

TLP (Note 1)

= 8 A

IEC 61000−4−2 Level 2 equivalent

( 4 kV Contact, 4 kV Air)

= 16 A

7.0

IEC 61000−4−2 Level 2 equivalent

( 8 kV Contact, 15 kV Air)

Junction Capacitance

= 0 V, f = 1 MHz

4.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z = 50 W, t = 100 ns, t = 4 ns, averaging window; t = 30 ns to t = 60 ns.

ORDERING INFORMATION

Device

†

Package

Shipping

ESDM1131MX4T5G

X4DFN2

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

ESDM1131

TYPICAL CHARACTERISTICS

1E−03

1E−04

1E−05

1E−06

1E−07

1E−08

1E−09

1E−10

1E−11

1E−12

1E−13

−3.5 −2.5

−1.5

−0.5

0.5

(V)

1.5

2.5

3.5

−6 −5 −4 −3 −2 −1

BIAS

V (V)

Figure 1. CV Characteristics

Figure 2. Reverse Leakage Current

−2

−4

−6

−8

−10

1.E+07

1.E+08

1.E+09

0.5

1.0

1.5

2.0

2.5

3.0

FREQUENCY (Hz)

FREQUENCY (GHz)

Figure 4. Capacitance over Frequency

Figure 3. S21 Insertion Loss

www.onsemi.com

ESDM1131

TYPICAL CHARACTERISTICS

−20

−18

−16

−14

−12

−10

−8

−6

−4

−2

10 12 14 16 18 20

V , VOLTAGE (V)

Figure 5. Positive TLP I−V Curve

Figure 6. Negative TLP I−V Curve

−30

−25

−20

−15

−10

−5

−10

110

130

150

−10

110

130

150

TIME (ns)

Figure 7. Positive 8 kV ESD Contact Discharge

Figure 8. Negative 8 kV ESD Contact Discharge

www.onsemi.com

ESDM1131

IEC61000−4−2 Waveform

IEC 61000−4−2 Spec.

peak

First Peak

Current

(A)

100%

90%

Test Volt-

age (kV)

Current at

30 ns (A)

Current at

60 ns (A)

Level

7.5

I @ 30 ns

22.5

I @ 60 ns

10%

= 0.7 ns to 1 ns

Figure 9. IEC61000−4−2 Spec

50 W Coax

Cable

Transmission Line Pulse (TLP) Measurement

Attenuator

Transmission Line Pulse (TLP) provides current versus

voltage (I−V) curves in which each data point is obtained

from a 100 ns long rectangular pulse from a charged

transmission line. A simplified schematic of a typical TLP

system is shown in Figure 10. TLP I−V curves of ESD

protection devices accurately demonstrate the product’s

ESD capability because the 10s of amps current levels and

under 100 ns time scale match those of an ESD event. This

is illustrated in Figure 11 where an 8 kV IEC 61000−4−2

current waveform is compared with TLP current pulses at

8 A and 16 A. A TLP I−V curve shows the voltage at which

the device turns on as well as how well the device clamps

voltage over a range of current levels.

50 W Coax

Cable

10 MW

DUT

Oscilloscope

Figure 10. Simplified Schematic of a Typical TLP

System

Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

X4DFN2, 0.445x0.24, 0.27P

CASE 718AA

ISSUE A

DATE 21 MAR 2017

SCALE 10:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. EXPOSED COPPER ALLOWED AS SHOWN.

MILLIMETERS

PIN 1

REFERENCE

DIM MIN

NOM MAX

0.15

−−−

0.18

0.21

0.03

TOP VIEW

−−−

0.170 0.185 0.200

0.415 0.445 0.475

0.210 0.240 0.270

0.270 BSC

0.03

0.105 0.120 0.135

SEATING

PLANE

GENERIC

MARKING DIAGRAMS*

SIDE VIEW

e/2

2X b

= Specific Device Code

PIN 1

2X L

*This information is generic. Please refer to

device data sheet for actual part marking.

Some products may not follow the Generic

Marking.

0.10 C A B

NOTE 3

0.05 C

BOTTOM VIEW

RECOMMENDED

MOUNTING FOOTPRINT*

0.21

0.27

PITCH

0.13

DIMENSIONS: MILLIMETERS

See Application Note AND8398/D for more mounting details

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON29067G

X4DFN2, 0.445X0.24, 0.27P

PAGE 1 OF 1

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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

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

ESDM1131MX4T5G [ONSEMI]

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