ESDU3121MXT5G [ONSEMI]
12 V 单向 ESD 防护器件;
| 型号： | ESDU3121MXT5G |
| 厂家： | 
ONSEMI |
| 描述： | 12 V 单向 ESD 防护器件 |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESDU3121
12 V Unidirectional ESD and
Surge Protection Device
The ESDU3121 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, high peak
pulse current handling capability and fast response time provide best
in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, tablets, MP3 players,
digital cameras and many other portable applications where board
space comes at a premium.
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MARKING
DIAGRAM
Features
X2DFN2
CASE 714AB
• Low Clamping Voltage
• Low Leakage
YK M
• Small Body Outline: 1.0 mm x 0.6 mm
YK = Specific Device Code
= Date Code
M
• Protection for the Following IEC Standards:
IEC61000−4−2 Level 4: 30 kV Contact Discharge
IEC61000−4−5 (Lightning): 8.5 A (8/20 ms)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
CATHODE
2
ANODE
Typical Applications
• Power Line Protection
• GPIO Protection
ORDERING INFORMATION
†
Device
ESDU3121MXT5G
Package
Shipping
Table 1. MAXIMUM RATINGS
Rating
Symbol
Value
30
Unit
X2DFN2
(Pb−Free)
8000 / Tape &
Reel
IEC 61000−4−2 (ESD)
Contact
Air
kV
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
30
Operating Junction Temperature
Range
T
J
−65 to + 150
°C
Storage Temperature Range
Minimum Peak Pulse Current
T
−65 to + 150
8.5
°C
STG
I
A
PP
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2018 − Rev. 1
ESDU3121/D
ESDU3121
Table 2. ELECTRICAL CHARACTERISTICS
A
I
(T = 25°C unless otherwise noted)
I
F
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
Working Peak Reverse Voltage
V
C
V
V
RWM
BR RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
RWM
I
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
PP
Uni−Directional Surge Protection
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
14.1
8.5
Typ
Max
12
Unit
V
Reverse Working Voltage
Breakdown Voltage
V
RWM
I/O Pin to GND
I = 1 mA, I/O Pin to GND
V
BR
15
15.8
0.1
V
T
Reverse Leakage Current
Reverse Peak Pulse Current
I
R
@ V
, I/O Pin to GND
mA
A
RWM
I
PP
IEC−61000−4−5 (8x20 ms)
= 8.5 A
Clamping Voltage 8x20 ms
V
C
I
PP
20.3
22
V
Waveform per Figure 3
Dynamic Resistance
Junction Capacitance
R
I/O Pin to GND, IEC−61000−4−5 (8x20 ms)
= 0 V, f = 1 MHz
0.70
55
W
DYN
C
V
R
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
ESDU3121
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
30
20
10
0
−10
−20
−30
−40
−10
−20
0
20
40
60
80
100
120
140
−20
0
20
40
60
80
100
120 140
TIME (ns)
TIME (ns)
Figure 1. ESD Clamping Voltage Positive 8 kV
Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Negative 8 kV
Contact per IEC61000−4−2
25
20
15
10
5
100
90
80
70
60
50
40
30
20
t
r
PEAK VALUE I
@ 8 ms
RSM
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
0
2
4
6
8
10
12
0
20
40
t, TIME (ms)
60
80
I
(A)
PK
Figure 3. 8 x 20 ms Pulse Waveform
Figure 4. Positive Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
60
50
40
30
20
10
0
18
16
14
12
10
8
9
8
7
6
5
4
3
2
1
0
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
5
10
15
(V)
20
25
V
(V)
V
CLTP
BIAS
Figure 5. Line Capacitance, ƒ = 1MHz
Figure 6. Positive TLP I−V Curve
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3
ESDU3121
Transmission Line Pulse (TLP) Measurement
ESD Voltage Clamping
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 7. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 8 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
50 W Coax
Cable
L
Attenuator
S
IEC 61000−4−2 Spec.
First Peak
÷
50 W Coax
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Current
(A)
Cable
I
M
V
M
10 MW
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
DUT
V
C
22.5
30
12
16
Oscilloscope
Figure 7. Simplified Schematic of a Typical TLP
System
IEC61000−4−2 Waveform
I
peak
100%
90%
I @ 30 ns
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 9. IEC61000−4−2 Spec
Oscilloscope
DUT
ESD Gun
Figure 8. Comparison Between 8 kV IEC 61000−4−2
and 8 A and 16 A TLP Waveforms
50 W
50 W
Cable
Figure 10. Diagram of ESD Test Setup
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
0.10
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
NOM MAX
A
A1
b
D
E
e
L
0.34
−−−
0.45
0.95
0.55
0.37
0.03
0.50
1.00
0.60
0.65 BSC
0.25
0.40
0.05
0.55
1.05
0.65
0.05
C
TOP VIEW
NOTE 3
A
0.10
0.10
C
0.20
0.30
C
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
C
SIDE VIEW
XX M
e
b
XX = Specific Device Code
e/2
M
0.05
C A B
M
= Date Code
1
RECOMMENDED
2X
L
0.05
SOLDER FOOTPRINT*
M
C A B
1.20
2X
BOTTOM VIEW
2X
0.47
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
PAGE 1 OF 1
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相关型号：
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