FAN1110B-F085 [ONSEMI]
Ignition Gate Driver IC;
| 型号： | FAN1110B-F085 |
| 厂家： | 
ONSEMI |
| 描述： | Ignition Gate Driver IC 栅 |
| 文件： | 总8页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Ignition Gate Drive IC
FAN1110B-F085
Description
SOIC8
The FAN1110B−F085 is designed to directly drive an ignition IGBT
and control the current and spark event of the coil. The coil current is
controlled via the input pin. When the differential input is driven high,
the output of the FAN1110B−F085 is enabled to turn on the IGBT and
start charging the coil.
CASE 751EB
MARKING DIAGRAM
An input spike filter suppresses differential input signals of less then
13 ms in duration. A Max Dwell timer is included in the
FAN1110B−F085 which will turn off the IGBT if the input stays active
for longer than the programmed time. This time interval can be
modified through an external capacitor. When the Max Dwell timer is
exceeded, the FAN1110B−F085 will enter a Hard−Shut−Down mode
(HSD) and turn off the IGBT immediately. The FAN1110B−F085 will
8
ALYW
FN1110B
G
1
also limit the collector current of the IGBT to I
during charging.
C(lim)
This again is done through the sense resistor in the emitter leg of the
FN1110B
AL
Y
W
G
= Specific Device Code
= Assembly Lot Code
= Year
= Work Week
= Pb−Free Package
Ignition IGBT developing a signal input to the V
pin of the
SENSE
FAN1110B−F085.
Features
• Differential Input for Ground Shift Disturbances Suppression
• Signal Line Input Buffer
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
• Input Spike Filter
• Operation from Ignition or Battery Line
• Ground Shift Tolerance − 2 V to 3 V
• Programmable Maximum Dwell Time
• Control IGBT Current Limiting through V
Pin
SENSE
• Hard Shutdown Following Max Dwell Time Out
• This is a Pb−Free Device
Applications
The FAN1110B−F085 is an advanced Ignition IGBT control IC
available in a SO8 package or die sales. This full featured Smart
Ignition IGBT Driver is particularly advantageous in “switch on coil”
applications where size and system performance of the ignition driver
are important.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 0
FAN1110B−F085/D
FAN1110B−F085
ORDERING INFORMATION
Part Number
†
Operating Temperature Range
−40°C to 150°C
Package
Shipping
FAN1110B−F085
8−SOIC
2500 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Recommended External Components
TYPICAL EXTERNAL COMPONENTS
Component
Description
Limits transient currents during load dump
Battery or Ignition voltage filtering
Battery noise transients
Noise immunity
Vendor
Parameter
Typ.
Unit
W
R
C
R
C
C
C
R
R
R
R
200 to 300
BAT
BAT
0.47
10
10
20
1
mF
nF
nF
mW
kW
kW
W
C
BAT1
C
IN
SENSE
R
Sense the collector current
Input Res High
R
INH
R
Input Res Low
1
INL
R
Adjust input impedance
IN
Typical Application
V
BATT
R
BAT
Ignition
Coil
C
C
BAT1
BAT
Vbat
R
R
INH
INL
INH
OUTPUT
R
ECU
IN
FAN1110B
C
IND
V
SENSE
INL
NC
CSSD
GND
R
SENSE
C
INC
CSSD
Figure 1. Typical Application
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2
FAN1110B−F085
Block Diagram
VBATT
Vreg
Bandgap Ref,
Bias,
Vref
INH
INL
Spike Filter
&
Disable
IGBT Driver
with
Current Limit
OUTPUT
VSENSE
Current
Feedback
Max Dwell
GND
CSSD
Figure 2. Block Diagram
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3
FAN1110B−F085
Package Outline
The FAN1110B−F085 is assembled in an 8 lead SOIC Package.
Figure 3. Pin Assignment (Top View)
PIN DESCRIPTION
Name
Pin1
Pin2
Pin3
Pin4
Pin5
Pin6
Pin7
Pin 8
Type
Description
GND
INL
Ground Reference of the Control IC
Input ground signal
INH
Positive input signal referenced to INL
CSSD
NC
Adjust maximum dwell time (to external capacitor)
Output
Gate Drive to the IGBT
Sense Input used for Ilim function
Supply voltage
V
SENSE
V
BAT
ABSOLUTE MAXIMUM RATINGS (−40°C to 150°C unless otherwise stated)
Symbol
Parameter
Min.
−0.3
−5
Max.
28
Unit
V
V
BAT
Voltage at V
pin (excl. EMC transients)
BAT
V
INH
Voltage at Input pin High
Voltage at Input pin Low
18
V
V
INL
−5
18
V
V
Voltage at C
−0.3
−0.3
0
5
V
CSSD
SSD
V
Voltage at Gate Output
Voltage on V pin
6.5
400
150
0.625
200
2
V
OUTPUT
V
mV
°C
W
SENSE
SENSE
T , T
J
Operating and Storage Temperature Range
−40
STG
P
Maximum power dissipation (continuous) at T = 25°C
MAX
C
R
Thermal Resistance − Junction–to−Case (typical)
°C/W
kV
q
JC
V
Electrostatic Discharge Voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD Assn. standard S5.1 − 1993
ESD1
(pin to pin excl. V
and V
)
INH
INL
V
Electrostatic Discharge Voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD Assn. standard S5.1 − 1993
1.25
kV
ESD1
(pin to pin incl. V
and V
)
INH
INL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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4
FAN1110B−F085
RECOMMENDED OPERATING CONDITIONS (Reference Load Characteristics) (Note 1)
Symbol
Characteristic
Collector (Coil) Operating Current
Min.
Typ.
12
Max.
Units
A
I
Ctyp
L
Coil Primary Inductance
1.5
0.4
2
mH
W
P
R
Coil Primary Resistance (25°C)
P
R
Load Resistance (for delay time measurements)
W
LOAD
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. onsemi does not recommend exceeding them or designing to Absolute Maximum Ratings. (−40°C to 150°C unless otherwise stated)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
POWER SUPPLY CONDITIONS V
= 6 to 28 V ; T = −40°C to 150°C (unless otherwise specified)
BAT
J
V
V
I
Operating voltage
Operating voltage
Supply current
Coil switching function
All functions
4
6
28
28
4
V
V
BAT1
BAT2
BAT
T = 150 °C, V
= 28 V, Input = 5 V
mA
V
J
BAT
V
V
clamp
I = 10 mA
BATT
35
55
CLAMP
BATTERY
SENSE PIN CONDITIONS V
= 6 to 28 V ; T = −40°C to 150 °C (unless otherwise specified)
J
BAT
V
Sense Voltage at current limit
Input spike filter
195
217
13
240
mV
ms
LIMIT
T
SPIKE
Delay on rising and falling edge of Input
T
D1
T
D2
Turn on delay time
(Time from Input = 4.0 V to V
= 4.0 V)
17
ms
OUT
C−GND
Turn off delay time
(Time from Input = 0.5 V to V
= 1.0 V)
17
ms
INPUT CONTROL CONDITIONS V
= 6 to 28 V; T = −40°C to + 150°C (unless otherwise specified)
J
BAT
V
Differential Input low voltage
Differential Input high voltage
Input voltage hysteresis
Input current
INL = GND
INL = GND
1.3
1.7
1.8
2.3
0.5
2.1
2.7
V
V
INLD
INHD
INHys
V
V
0.25
0.75
V
I
I
V
BAT
= 0 V, INL = GND
0.33xV
0.10xV
mA
mA
V
IN
INH
Input current
6 V < V
< 20 V, INL = GND
IN
BAT
INH
V
Common mode voltage
Floating INH voltage
CM
V
INHGF
(6 V < V < 20 VINH and INL floating) refer
0.8
0.8
V
S
to GND @ T = 25°C
V
INLGF
Floating INL voltage
(6 V < V < 20 VINH and INL floating) refer
V
S
to GND @ T = 25°C
GATE OUTPUT VOLTAGE MAX V
= 6 to 28 V; T = −40°C to 150°C (unless otherwise specified)
BAT
J
V
16 KW pulldown resistor
4.5
0.0
5.25
6
V
V
Vgate max
Vgate low
GMAX
V
GLOW
(0 mA < I
< 0.4 mA @ T = 25°C)
0.2
GATE
DIAGNOSTIC FUNCTIONS AND PROTECTION V
= 6 to 28 V ; T = −40°C to 150°C (unless otherwise specified)
BAT
J
CSSD
Minimum dwell time capacitor
Maximum dwell time
5
nF
ms
mA
MIN
TD
(CSSD = 50 nF)
65
100
135
1.9
MAX
CSSD1
I
CSSD Pin current for TDMAX
0.92
1.25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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5
FAN1110B−F085
TYPICAL PERFORMANCE CHARACTERISTICS
Input and Spike Filter
Maximum Dwell Time and Hard−Shutdown (HSD)
When the IGBT is turned on, a delay timer, dependent on
the value of the external CSSD capacitor (see Figure 5), is
started. If a valid falling edge has not been received after the
time TDMAX, the IGBT will be turned off immediately as
shown in Figure 4.
When the differential input signal voltage between INH
and INL pins reaches VINHD, the IGBT will be switched on
charging the coil. When this differential input voltage goes
below VINLD, the coil current through the IGBT will be
turned off. Positive and negative spikes of less than TSPIKE
duration at the input line will be filtered out and will not turn
on/off the IGBT.
V
IN
I
Clim
I
C
t
T
T
SPIKE
DMAX
Figure 4. Dwell Time and Hard−Shut−Down
180
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
CSSD Capacitance (nF)
Figure 5. TDMAX as Function of External CSSD Capacitor
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6
FAN1110B−F085
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
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7
FAN1110B−F085
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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Phone: 011 421 33 790 2910
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Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
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