FCA22N60N [ONSEMI]
功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，22 A，165 mΩ，TO-3P;
| 型号： | FCA22N60N |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，22 A，165 mΩ，TO-3P 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2014 年 1 月
FCA22N60N
®
N 沟道 SupreMOS MOSFET
600 V， 22 A， 165 m
特性
说明
SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）
技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工
艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-
resistance （导 通 电 阻 规 格） ，卓 越 的 开 关 性 能 和 耐 用 性。
SupreMOS MOSFET 产品非常适合高频开关电源转换器应用，
如功率因数校正 (PFC)、服 务 器 / 电信电源、平板电视电源、ATX
电源及工业电源应用。
•
•
•
•
•
•
BVDSS > 650 V @ TJ = 150°C
RDS(on) = 140 m (Typ.)@VGS = 10 V, ID = 11 A
超低栅极电荷 （典型值 Qg = 45 nC）
低有效输出电容 （典型值 Coss(eff.)= 196.4 pF）
100% 经过雪崩测试
符合 RoHS 标准
应用
•
•
•
PDP 电视
太阳能逆变器
AC-DC 电源
D
G
G
D
TO-3PN
S
S
MOSFET 最大额定值指的是 TC = 25°C 除非另有说明。
FCA22N60N
600
符号
VDSS
VGSS
参数
单位
V
漏极－源极电压
栅极－源极电压
±30
V
22
- 连续 (TC = 25°C)
- 连续 (TC = 100°C)
- 脉冲
ID
A
漏极电流
13.8
66
IDM
EAS
IAR
A
mJ
A
漏极电流
（注 1）
（注 2）
（注 1）
（注 1）
672
单脉冲雪崩能量
雪崩电流
7.3
EAR
2.75
100
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
20
二极管恢复 dv/dt 峰值
（注 3）
(TC = 25°C)
205
W
W/°C
°C
功耗
1.64
-55 至 +150
300
- 超过 25°C 时降额
TJ, TSTG
TL
工作和存储温度范围
°C
用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒
热性能
FCA22N60N
符号
RJC
参数
单位
结至外壳热阻最大值
0.61
40
°C/W
结至环境热阻最大值
RJA
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©2009 飞兆半导体公司
1
FCA22N60N Rev. C1
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FCA22N60N
FCA22N60N
TO-3PN
不适用
30 单元
电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
ID = 1 mA, VGS = 0 V,TJ = 25°C
ID = 1 mA, VGS = 0 V, TJ = 150°C
600
650
-
-
-
-
BVDSS
V
漏极－源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
ID = 1 mA，参考 25°C
-
0.68
-
V/°C
VDS = 480 V, VGS = 0 V
VDS = 480 V, TJ = 125°C
VGS = ±50 V, VDS = 0 V
-
-
-
-
-
-
10
IDSS
IGSS
A
零栅极电压漏极电流
100
±100
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 11 A
VDS = 20 V, ID = 11 A
2.0
3
4.0
0.165
-
V
S
栅极阈值电压
-
-
0.140
22
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
1950
75.9
3
-
-
-
-
-
-
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
输出电容
反向传输电容
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
43.2
196.4
45
输出电容
有效输出电容
10 V 的栅极电荷总量
栅极 - 源极栅极电荷
栅极 - 漏极 “ 密勒 ” 电荷
等效串联电阻 (G-S)
V
V
DS = 380 V, ID = 11 A,
GS = 10 V
8.7
（说明 4）
Qgd
14.5
1
ESR
f = 1 MHz
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
16.9
16.7
49
-
-
-
-
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 11 A,
V
GS = 10 V, RG = 4.7
4
（说明 4）
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
22
66
1.2
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
-
-
VGS = 0 V, ISD = 11 A
V
350
6
ns
C
VGS = 0 V, ISD = 11 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 7.3 A， R = 25 ，启动 T = 25°C。
AS
G
J
3. I 22 A， di/dt 200 A/s， V 380 V，启动 T = 25°C。
SD
DD
J
4. 本质上独立于工作温度的典型特性。
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©2009 飞兆半导体公司
2
FCA22N60N Rev. C1
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
100
10
1
100
*Notes:
1. 250s Pulse Test
2. TC = 25oC
VGS = 15.0 V
10.0 V
8.0 V
150oC
-55oC
25oC
7.0 V
6.0 V
5.0 V
4.0 V
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
0.1
1
1
10
0.3
2
3
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图 4. 体二极管正向电压变化与源电流和温度
100
0.4
0.3
150oC
25oC
10
VGS = 10V
0.2
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
40 50
ID, Drain Current [A]
2. 250s Pulse Test
1
0.0
0.1
0.5
1.0
1.5
0
10
20
30
60
VSD, Body Diode Forward Voltage [V]
图 5. 电容特性
图 6. 栅极电荷
10
1E5
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 120V
DS = 300V
VDS = 480V
= C + C
ds gd
= C
gd
oss
rss
Coss
V
10000
8
6
4
2
0
Ciss
1000
100
10
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
*Note: ID = 11A
40
1
0.1
1
10
100
600
0
10
20
30
50
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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©2009 飞兆半导体公司
3
FCA22N60N Rev. C1
典型性能特征 （接上页）
图 7. 击穿电压变化与温度
1.2
图 8. 导通电阻变化与温度
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 1mA
2. ID = 11A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳体温度
25
100
10s
100s
20
15
10
5
10
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0
25
0.01
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图 11. 瞬态热响应曲线
1
0.5
0.2
PDM
0.1
0.1
t1
t2
0.05
*Notes:
1. ZJC(t) = 0.61oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.02
0.01
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
10
t
，
矩
形
脉
冲
持
续
时间 [ 秒 ]
1
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©2009 飞兆半导体公司
4
FCA22N60N Rev. C1
I
= 常量
G
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
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©2009 飞兆半导体公司
5
FCA22N60N Rev. C1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 二极管恢复 dv/dt 峰值测试电路与波形
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©2009 飞兆半导体公司
6
FCA22N60N Rev. C1
机械尺寸
图 16. TO3， 3 引脚、塑料， EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
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©2009 飞兆半导体公司
7
FCA22N60N Rev. C1
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
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CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
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Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
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ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
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®
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SuperSOT™-3
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®
®
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®
Ultra FRFET™
UniFET™
VCX™
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
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®
®
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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FCA22N60N Rev. C1
8
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