FCA47N60F [ONSEMI]
N 沟道 SuperFET® FRFET® MOSFET 600V, 47A, 73mΩ;
| 型号： | FCA47N60F |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® FRFET® MOSFET 600V, 47A, 73mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：2138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2017 年9 月
FCA47N60F
N-Channel SuperFET FRFET MOSFET
®
®
600 V, 47 A, 73 m
特性
•
说明
SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓
越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务
器 / 电信电源、平板电视电源、ATX 电源及工业电源应用。
SuperFET FRFET® MOSFET 优化体二极管的反向恢复性能可
去除额外元件并提高系统可靠性。
650 V @ TJ = 150 °C
• 典型值RDS(on) = 62 m
• 快速恢复时间（典型值Trr = 240 ns)
• 超低栅极电荷（典型值Qg = 210 nC)
• 低有效输出电容（典型值Coss(eff.)= 420 pF)
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
• 光伏逆变器
•
AC-DC 电源
D
G
G
D
TO-3PN
S
S
最大绝对额定值TC = 25°C 除非另有说明。
FCA47N60F
符号
VDSS
参数
单位
600
V
漏极－源极电压
漏极电流
ID
47
29.7
A
A
- 连续(TC = 25°C)
- 连续(TC = 100°C)
（说明1）
IDM
A
漏极电流
- 脉冲
141
30
1800
47
VGSS
EAS
IAR
V
mJ
A
栅极至源极电压
单脉冲雪崩能量
雪崩电流
（说明2）
（说明1）
（说明1）
（说明3）
EAR
dv/dt
PD
41.7
50
mJ
V/ns
重复雪崩能量
二极管恢复dv/dt 峰值
功耗
(TC = 25°C)
417
W
3.33
W/°C
- 超过25°C 时降额
TJ， TSTG
TL
-55 至+150
°C
°C
工作和存储温度范围
用于焊接的最高引脚温度，
距离外壳1/8”，持续5 秒
300
热性能
FCA47N60F
0.3
符号
RJC
参数
单位
°C/W
°C/W
结至外壳热阻最大值
结至环境热阻最大值
RJA
41.7
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©2007 飞兆半导体公司
1
FCA47N60F Rev. 1
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
带宽
数量
FCA47N60F
TO-3PN
N/A
N/A
FCA47N60F
30 单元
电气特性TC=25°C 除非另有说明。
符号
关断特性
BVDSS
参数
工作条件
最小值 典型值 最大值 单位
V
GS = 0 V, ID = 250 A, TJ = 25°C
600
--
--
--
--
V
V
漏极－源极击穿电压
VGS = 0 V, ID = 250 A, TJ = 150°C
650
BVDSS
/ TJ
击穿电压温度系数
I
D = 250 A，参考25°C
--
--
0.6
--
--
V/C
BVDS
IDSS
VGS = 0 V, ID = 47 A
700
V
漏源极雪崩击穿电压
零栅极电压漏极电流
V
V
DS = 600 V, VGS = 0 V,
DS = 480 V, TC = 125C
--
--
--
--
10
100
A
A
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
栅极- 体漏电流，正向
栅极- 体漏电流，反向
-100
导通特性
VGS(th)
V
DS = VGS, ID = 250 A
3.0
--
--
0.062
40
5.0
0.073
--
V
S
栅极阈值电压
RDS(on)
漏极－源极
导通电阻
VGS = 10 V, ID = 23.5 A
gFS
VDS = 20 V, ID = 23.5 A
--
正向跨导
动态特性
Ciss
V
DS = 25 V, VGS = 0 V,
--
--
--
--
--
5900
3200
250
8000
4200
--
pF
pF
pF
pF
pF
输入电容
f = 1 MHz
Coss
输出电容
Crss
反向传输电容
输出电容
Coss
V
DS = 480 V, VGS = 0 V, f = 1 MHz
160
--
Coss(eff.)
VDS = 0 V 至400 V, VGS = 0 V
420
--
有效输出电容
开关特性
td(on)
tr
V
V
DD = 300 V, ID = 47 A,
GS = 10 V, RG = 25
--
--
--
--
--
--
--
185
210
520
75
430
450
1100
160
270
--
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
总栅极电荷
td(off)
tf
ns
（说明4）
（说明4）
ns
Qg
VDS = 480 V, ID = 47 A,
VGS = 10 V
210
38
nC
nC
nC
Qgs
Qgd
栅源极电荷
110
--
栅漏极电荷
漏极- 源极二极管特性和最大额定值
IS
--
--
--
--
--
--
--
47
141
1.4
--
A
A
漏源极二极管最大正向连续电流
漏源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, IS = 47 A
--
V
VGS = 0 V, IS = 47 A,
dIF/dt = 100 A/s
240
2.04
ns
C
Qrr
--
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I =18 A，V =50 V，R =25 ，开始T =25°C。
AS
DD
G
J
3. I 47 A，di/dt 1200 A/s，V BV
，开始T =25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
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©2007 飞兆半导体公司
2
FCA47N60F Rev. 1
典型性能特征
图1. 导通区域特性
图2. 传输特性
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150C
101
25C
-55C
* Notes :
1. 250s Pulse Test
2. TC = 25oC
- Note
1. VDS = 40V
100
2. 250s Pulse Test
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源电流和温度的关系
0.25
102
0.20
0.15
VGS = 10V
101
0.10
150C
VGS = 20V
25C
0.05
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25C
100
0.2
0.00
0
20
40
60
80
100
120
140
160
180
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷特性
25000
12
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
VDS = 100V
VDS = 250V
VDS = 400V
10
8
20000
15000
10000
5000
Coss
6
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
4
2
Crss
* Note : ID = 47A
200
0
0
10-1
100
101
0
50
100
150
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.onsemi.com
©2007 飞兆半导体公司
FCA47N60F Rev. 1
3
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
* Notes :
1. VGS = 0 V
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
2. ID = 250A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
图9. 安全工作区
图10. 最大漏极电流与壳温的关系
50
Operation in This Area
is Limited by R DS(on)
102
40
30
20
10
0
100 s
1 ms
10 ms
101
DC
* Notes :
1. TC = 25C
2. TJ = 150C
3. Single Pulse
100
10-1
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [C]
VDS, Drain-Source Voltage [V]
图11. 瞬态热响应曲线
D = 0.5
1 0 -1
*
N o te s
:
0.2
1 .
Z
JC (t) = 0.3 C /W M a x.
2 . D uty F a cto r, D = t1 /t2
0 .1
3 . T JM
-
T C
=
P D M * Z JC (t)
0.05
0.02
PDM
t1
1 0 -2
t2
0.01
single pulse
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u are W a ve P ulse D u ra tio n [se c]
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©2007 飞兆半导体公司
FCA47N60F Rev. 1
4
图12. 栅极电荷测试电路与波形
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I = 常量
G
Charge
图13. 阻性开关测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 非箝位感性开关测试电路与波形
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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©2007 飞兆半导体公司
5
FCA47N60F Rev. 1
图15. 峰值二极管恢复dv/dt 测试电路与波形
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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©2007 飞兆半导体公司
6
FCA47N60F Rev. 1
机械尺寸
图16. TO3，3 引脚、塑料，EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸.
www.onsemi.com
©2007 飞兆半导体公司
7
FCA47N60F Rev. 1
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