FCB290N80 [ONSEMI]
N 沟道 SuperFET® II MOSFET;
| 型号： | FCB290N80 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® II MOSFET |
| 文件： | 总10页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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March 2015
FCB290N80
N-Channel SuperFET II MOSFET
®
800 V, 17 A, 0.29
Features
Description
•
•
•
•
•
•
RDS(on) = 0.259 Typ.)
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Eoss (Typ. 5.4 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
100% Avalanche Tested
RoHS Compliant
Applications
•
AC - DC Power Supply
•
LED Lighting
D
D
G
G
D2-PAK
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FCB290N80
800
Unit
Drain to Source Voltage
Gate to Source Voltage
V
- DC
±20
VGSS
ID
V
A
- AC
(f > 1 Hz)
±30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
17
Drain Current
10.8
42
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
882
3.4
EAR
Repetitive Avalanche Energy
MOSFET dv/dt
2.12
100
mJ
dv/dt
PD
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
(TC = 25oC)
- Derate Above 25oC
212
W
W/oC
oC
Power Dissipation
1.7
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
Thermal Characteristics
Symbol
Parameter
Unit
FCB290N80
RJC
Thermal Resistance, Junction to Case, Max.
0.59
62.5
40
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
oC/W
RJA
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
D2-PAK
Packing Method
Reel Size
Tape Width
Quantity
FCB290N80
FCB290N80
Tape and Reel
330 mm
24 mm
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 1 mA, TJ = 25C
D = 1 mA, Referenced to 25oC
DS = 800 V, VGS = 0 V
800
-
-
-
-
V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
I
0.85
V/oC
V
-
-
-
-
-
-
25
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
VDS = 640 V, VGS = 0 V,TC = 125oC
250
±10
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 1.7 mA
VGS = 10 V, ID = 8.5 A
VDS = 20 V, ID = 8.5 A
2.5
-
4.5
0.290
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.259
20
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
2410
75
3205
pF
pF
pF
pF
pF
nC
nC
nC
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
100
Reverse Transfer Capacitance
Output Capacitance
0.36
35
-
-
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
240
58
-
75
-
V
V
DS = 640 V, ID = 17 A,
GS = 10 V
11
(Note 4)
Qgd
22
-
ESR
f = 1 MHz
0.75
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
22
14
61
2.6
54
38
ns
ns
ns
ns
VDD = 400 V, ID = 17 A,
VGS = 10 V, Rg = 4.7
132
15
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 17 A
-
-
-
-
-
-
-
17
42
1.2
-
A
A
ISM
VSD
trr
-
V
Reverse Recovery Time
511
12
ns
C
V
GS = 0 V, ISD = 17 A,
dIF/dt = 100 A/s
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 3.4 A, R = 25 , starting T = 25C
AS
G
J
3. I 17 A, di/dt 200 A/s, V BV
, starting T = 25C
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristic.
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
VGS
=
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
150oC
-55oC
10
25oC
1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
0.1
1
2
3
4
5
6
7
1
10
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.6
100
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
150oC
0.4
VGS = 10V
1
VGS = 20V
25oC
*Note: TC = 25oC
30 40 50
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10.0
100000
10000
1000
100
10
VDS = 160V
Ciss
7.5
VDS = 400V
VDS = 640V
Coss
5.0
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
2.5
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
= C + C
ds gd
= C
gd
oss
rss
*Note: ID = 17A
56
0.0
0.1
0
14
28
42
70
0.1
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
1.2
3.0
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2.5
2.0
1.5
1.0
0.5
0.0
2. ID = 8.5A
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
200
100
10s
16
12
8
100s
10
1ms
DC
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
4
2. TJ = 150oC
3. Single Pulse
0
0.01
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
15
12
9
6
3
0
0
160
320
480
640
800
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.1
0.2
0.1
PDM
0.05
0.02
0.01
t1
t2
0.01
Single pulse
*Notes:
1. ZJC(t) = 0.59oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
5
I
= const.
G
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
7
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
F) FILENAME: TO263A02REV8
2.79
1.78
ꢄ
ꢃ
0.25 MAX
(5.38)
SEATING
PLANE
'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ
SCALE: 2X
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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