FCD380N60E [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，10.2 A，380 mΩ，DPAK;
| 型号： | FCD380N60E |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，10.2 A，380 mΩ，DPAK |
| 文件： | 总11页 (文件大小：852K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年9 月
FCD380N60E
®
N-Channel SuperFET II 易驱动MOSFET
600 V, 10.2 A, 380 mΩ
特性
•
描述
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色的低导通电阻和更低栅极电荷性能的全新高压超级结
(SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供
卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，与
SuperFET II MOSFET 系列相比，SuperFET II MOSFET 易驱动
系列提供略为缓慢的上升和下降时间。注意以 “E” 作为后缀的系
列产品有助于控制EMI 问题和允许更简单的设计执行。对于开关
速度很快同时需要开关损耗必须尽可能低的应用，请考虑使用
SuperFET II MOSFET 系列。
650 V @ TJ = 150°C
• 典型值RDS(on) = 320 mΩ
• 超低栅极电荷（典型值Qg = 34 nC)
• 低有效输出电容（典型值Coss(eff.)= 97 pF)
•
100% 经过雪崩测试
• 集成栅极电阻
• 符合RoHS 标准
D
D
G
G
S
D-PAK
S
绝对最大额定值 TC = 25°C 除非另有说明。
FCD380N60E
600
符号
参数
- DC
单位
VDSS
VGSS
V
漏极－源极电压
栅极－源极电压
±20
V
V
- AC
(f > 1 Hz)
±30
10.2
6.4
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
ID
A
漏极电流
IDM
EAS
IAR
30.6
211.6
2.3
A
mJ
A
漏极电流
（注1）
（注2）
（注1）
（注1）
单脉冲雪崩能量
雪崩电流
EAR
1.06
100
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
20
二极管恢复dv/dt 峰值
（注3）
(TC = 25°C)
106
W
W/°C
°C
功耗
0.85
- 高于25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
300
°C
用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒
热性能
FCD380N60E
1.18
符号
RθJC
参数
结至外壳热阻最大值
单位
°C/W
RθJA
100
结至环境热阻最大值
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1
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
封装标识与定购信息
器件编号
顶标
FCD380N60E
封装
包装方法
卷带
卷尺寸
带宽
数量
DPAK
330 mm
16 mm
FCD380N60E
2500 颗
电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值 单位
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
600
650
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
击穿电压温度系数
-
0.67
-
V/°C
V
ID = 10 mA, 参考25°C 数值
VGS = 0 V, ID = 10 A
-
-
-
-
700
-
5
漏源极雪崩击穿电压
零栅极电压漏极电流
栅极- 体漏电流
VDS = 480 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
-
-
-
μA
20
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
2.5
-
3.5
0.38
-
V
Ω
S
栅极阈值电压
-
-
0.32
10
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
1330
945
60
1770
pF
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
1260
输出电容
Crss
90
-
反向传输电容
Coss
VDS = 380 V, VGS = 0 V, f = 1 MHz
25
输出电容
Coss(eff.)
Qg(tot)
Qgs
97
-
有效输出电容
VDS = 0 V 至480 V, VGS = 0 V
34
45
-
10 V 电压的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻
V
V
DS = 380 V, ID = 5 A,
GS = 10 V
5.3
13
（注4）
Qgd
-
ESR
f = 1 MHz
6
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
17
9
44
28
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 5 A,
V
GS = 10 V, Rg = 4.7 Ω
64
10
138
30
（注4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
10.2
30.6
1.2
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
-
-
VGS = 0 V, ISD = 5 A
V
240
3
ns
μC
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 2.3 A, V = 50 V, R = 25 Ω, 开始于T = 25°C。
AS
DD
G
J
3. I ≤ 5.1 A, di/dt ≤ 200 A/μs, V ≤ BV
, 开始于T = 25°C。
SD
DD
DSS
J
4. 典型特性本质上独立于工作温度。
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2
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
典型性能特征
图1. 导通区域特性图
2. 传输特性
50
50
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
10
1
150oC
25oC
1
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.1
0.1
0.1
2
1
10
20
4
6
8
10
VDS, Drain to Source Voltage[V]
VGS, Gate to Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流和温度的关系
100
0.8
0.7
0.6
0.5
150oC
10
25oC
VGS = 10V
0.4
VGS = 20V
*Notes:
1. VGS = 0V
0.3
*Note: TC = 25oC
20 25
ID, Drain Current [A]
2. 250μs Pulse Test
1
0.2
0.2
0
5
10
15
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
10
10000
VDS = 120V
VDS = 300V
Ciss
8
6
4
2
0
1000
100
VDS = 480V
Coss
*Note:
1. VGS = 0V
10
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Crss
= C + C
ds
= C
gd
oss
rss
gd
1
0.5
*Note: ID = 5A
25 30 35
0
5
10
15
20
0.1
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain to Source Voltage [V]
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3
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
1.15
3.0
1.10
1.05
1.00
0.95
0.90
0.85
2.5
2.0
1.5
1.0
0.5
0.0
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
2. ID = 5A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
50
12
10
8
10μs
100μs
10
1ms
6
10ms
Operation in This Area
is Limited by R DS(on)
1
DC
4
*Notes:
1. TC = 25oC
2. TJ = 150oC
2
3. Single Pulse
0.1
0.1
0
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain to Source Voltage [V]
图11. Eoss 和漏极- 源极电压的关系
6
5
4
3
2
1
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage [V]
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4
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
典型性能特性（接上页）
图12. 瞬态热响应曲线
2
1
0.5
PDM
0.2
0.1
t1
t2
*Notes:
0.05
1. ZθJC(t) = 1.18oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.1 0.01
Single pulse
0.05
10-5
10-4
10-3
10-2
10-1
100
t
1，矩形脉冲持续时间[ 秒]
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5
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位电感开关测试电路与波形
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6
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
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7
© 2012 飞兆半导体公司
FCD380N60E Rev. C2
机械尺寸
图17. TO252 (D-PAK)，模塑，3 引脚，选项AA&AB
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格说明并不扩大飞兆半导体全球范围内的条款与条件，尤其
是其中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
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© 2012 飞兆半导体公司
FCD380N60E Rev. C2
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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AccuPower™
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F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
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Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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®
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I66
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© 2012 飞兆半导体公司
FCD380N60E Rev. C2
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