FCD7N60TM-WS [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，7 A，600 mΩ，DPAK;
| 型号： | FCD7N60TM-WS |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，7 A，600 mΩ，DPAK 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：1033K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCD7N60
®
N 沟道 SuperFET MOSFET
600 V, 7 A, 600 mΩ
特性
说明
SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结 （SJ）
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓
越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正 (PFC)、服务
器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。
•
•
•
•
•
•
650 V @ TJ=150°C
典型值 RDS(on) = 530 mΩ
超低栅极电荷 （典型值 Qg = 23 nC)
低有效输出电容 （典型值 Coss(eff.)= 60 pF)
100% 经过雪崩测试
符合 RoHS 标准
应用
•
•
•
•
LCD/LED 电视和显示器
照明
光伏逆变器
AC-DC 电源
D
D
G
G
S
D-PAK
S
MOSFET 最大额定值 TC =25°C 除非另有说明。
FCD7N60TM /
FCD7N60TM_WS
符号
VDSS
参数
单位
600
7
V
A
漏极－源极电压
漏极电流
- 连续 (TC=25°C)
- 连续 (TC=100°C)
- 脉冲
ID
4.4
21
IDM
A
V
漏极电流
（说明 1）
VGSS
EAS
IAR
±30
230
7
栅极－源极电压
单脉冲雪崩能量
雪崩电流
mJ
A
（说明 2）
（说明 1）
（说明 1）
（说明 3）
EAR
dv/dt
8.3
20
mJ
V/ns
W
重复雪崩能量
二极管恢复 dv/dt 峰值
(TC = 25°C)
83
PD
功耗
0.67
W/°C
°C
- 降低至 25°C 以上
TJ, TSTG
TL
工作和存储温度范围
-55 至 +150
300
°C
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
热性能
FCD7N60TM /
FCD7N60TM_WS
符号
参数
单位
RθJC
RθJA
1.5
83
结至外壳热阻最大值
结至环境热阻最大值
°C/W
Publication Order Number:
FCD7N60/D
1
©2008 飞兆半导体公司
December-2017, Rev. 3
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷带
卷尺寸
带宽
数量
FCD7N60TM
FCD7N60
D-PAK
330 mm
16 mm
2500 个
2500 个
FCD7N60TM-WS
FCD7N60
D-PAK
330 mm
16 mm
卷带
电气特性 TC =25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
V
GS = 0 V, ID = 250 μA, TC = 25°C
600
-
-
-
-
V
V
漏极－源极击穿电压
VGS = 0 V, ID = 250 μA, TC = 150°C
650
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
击穿电压温度系数
I
D = 250 μA，参考 25°C
-
0.6
-
V/°C
V
V
GS = 0 V, ID = 7.0 A
-
-
-
-
700
-
1
漏源极雪崩击穿电压
零栅极电压漏极电流
栅极 - 体漏电流
V
DS = 600 V, VGS = 0 V
-
-
-
μA
VDS = 480 V, TC = 125°C
GS = ±30 V, VDS = 0 V
10
V
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.5 A
3.0
-
0.53
6
5.0
0.6
-
V
Ω
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
V
DS = 40 V, ID = 3.5 A
动态特性
Ciss
-
-
-
-
-
710
380
34
920
500
-
pF
pF
pF
pF
pF
输入电容
V
DS = 25 V, VGS = 0 V,
Coss
输出电容
f = 1 MHz
Crss
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1 MHz
22
29
-
Coss(eff.)
60
有效输出电容
VDS = 0 V 至 400 V, VGS = 0 V
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
35
55
80
120
160
75
ns
ns
导通延迟时间
VDD = 300 V, ID = 7.0 A,
开通上升时间
V
GS = 10 V , RG = 25 Ω
75
ns
关断延迟时间
（说明 4）
（说明 4）
32
ns
关断下降时间
Qg(tot)
Qgs
Qgd
23
30
nC
nC
nC
10 V 的栅极电荷总量
栅极 - 源极栅极电荷
栅极 - 漏极 “ 米勒 ” 电荷
V
V
DS = 480 V, ID = 7.0 A,
GS = 10 V
4.2
11.5
5.5
-
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
7
21
1.4
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 7.0 A
GS = 0 V, ISD = 7.0 A,
-
V
360
4.5
ns
μC
V
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 3.5 A， V = 50 V， R = 25 Ω，启动 T = 25°C。
AS
DD
G
J
3. I ≤ 7 A， di/dt ≤ 200 A/μs， V ≤ BV
，启动 T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
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2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Top :
101
101
100
10-1
Bottom : 5.5 V
150∩
25∩
100
-55∩
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
∝ Note
1. VDS = 40V
2. 250レs Pulse Test
10-1
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图 3. 导通电阻变化与漏极电流和栅极电压的关系 图 4. 体二极管正向电压变化与源极电流和温度的关系
2.0
1.8
1.6
101
1.4
VGS = 10V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
150∩
25∩
VGS = 20V
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
∝ Note : T = 25∩
J
10-1
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
图 5. 电容特性
图 6. 栅极电荷特性
12
10
8
3000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
Coss = Cds + Cgd
Crss = Cgd
VDS = 400V
2000
1000
Coss
6
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
4
iss
Crss
2
∝ Note : ID = 7A
0
0
10-1
100
101
0
5
10
15
20
25
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
典型性能特性 （接上页）
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
∝ Notes :
1. VGS = 0 V
2. ID = 250 レA
∝ Notes :
1. VGS = 10 V
2. ID = 3.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳温的关系
10.0
102
Operation in This Area
is Limited by R DS(on)
100 us
7.5
5.0
2.5
0.0
101
100
1 ms
10 ms
DC
∝ Notes :
10-1
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
10-2
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [∩ ]
图 11. 瞬态热响应曲线
100
D=0.5
0.2
0.1
∝
Notes
:
1. Zヨ (t)
=
1.5
∩ /W M ax.
JC
2. Duty Factor, D=t1/t2
10-1
0.05
3. TJM
-
TC
=
PDM * Zヨ (t)
JC
0.02
0.01
PDM
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I = 常量
G
Charge
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
图 14. 非箝位感性开关测试电路与波形
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 峰值二极管恢复 dv/dt 测试电路与波形
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6
机械尺寸
图 16. TO252 (D-PAK)，模塑， 3 引脚，选项 AA&AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
www.onsemi.com
7
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