FCH170N60 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，22 A，170 mΩ，TO-247;
| 型号： | FCH170N60 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，22 A，170 mΩ，TO-247 |
| 文件： | 总11页 (文件大小：927K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年9 月
FCH170N60
N 沟道SuperFET® II MOSFET
600 V, 22 A, 170 mΩ
特性
•
描述
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ)
MOSFET 系列产品。这项先进技术专用于最小化传导损耗，提供
卓越的开关性能，并能够承受极端 dv/dt 额定值和更高雪崩能
量。因此，SuperFET II MOSFET 适用于系统小型化和高效化的
各种各样的AC-DC 功率转换的应用中。
650 V @TJ = 150°C
• 典型值RDS(on) = 150 mΩ
• 超低栅极电荷（典型值Qg = 42 nC)
• 低有效输出电容（典型值Coss(eff.)=190 pF）
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
• 通信/ 服务器电源
• 工业电源
•
AC-DC 电源
D
G
G
D
TO-247
S
S
绝对最大额定值 TC = 25°C 除非另有说明。
FCH170N60
600
±20
±30
22
符号
参数
- DC
单位
VDSS
VGSS
V
漏极－源极电压
栅极－源极电压
V
A
- AC
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
ID
漏极电流
14
IDM
EAS
IAR
66
A
mJ
A
漏极电流
（注1）
（注2）
（注1）
（注1）
（注3）
525
5
单脉冲雪崩能量
雪崩电流
EAR
2.27
100
20
mJ
重复雪崩能量
MOSFET dv/dt
二极管恢复dv/dt 峰值
dv/dt
PD
V/ns
(TC = 25°C)
227
1.82
Ω
W/°C
°C
功耗
- 高于25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
用于焊接的最高引脚温度，
距离外壳1/8”，持续5 秒
300
°C
热性能
FCH170N60
符号
RθJC
参数
单位
0.55
40
结至外壳热阻最大值
结至环境热阻最大值
°C/W
RθJA
www.fairchildsemi.com
1
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
封装标识与定购信息
器件标识
器件
FCH170N60
封装
卷尺寸
带宽
数量
FCH170N60
TO-247
-
-
30
电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
ID = 10 mA,VGS = 0 V,TJ = 25°C
ID = 10 mA,VGS = 0 V, TJ = 150°C
600
650
-
-
-
-
V
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
-
0.67
-
V/°C
ID = 10 mA, 参考25°C 数值
VDS = 600 V, VGS = 0 V
-
-
-
-
1.2
-
1
-
IDSS
IGSS
μA
零栅极电压漏极电流
VDS = 480 V, VGS = 0 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 11 A
VDS = 20 V, ID = 11 A
2.5
-
3.5
170
-
V
mΩ
S
栅极阈值电压
-
-
150
17
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
2150
60
2860
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 380 V, VGS = 0 V
f = 1 MHz
Coss
80
-
输出电容
Crss
2.65
190
42
反向传输电容
Coss (eff.)
Qg(tot)
Qgs
VDS = 0 V 至480 V, VGS = 0 V
-
有效输出电容
55
-
10 V 电压的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻
VDS = 380 V, ID = 11 A,
9
V
GS = 10 V
（注4）
Qgd
11
-
ESR
f = 1 MHz
0.95
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
21
12
55
3.8
50
35
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 11 A,
V
GS = 10 V, RG = 4.7 Ω
120
18
（注4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
22
66
1.2
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 11 A
-
V
346
6.2
ns
μC
VGS = 0 V, ISD = 11 A
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注：
1. 重复额定值：脉冲宽度受限于最大结温
2. I = 5 A, R = 25 Ω, 开始于T = 25°C
AS
G
J
3. I ≤ 11 A, di/dt ≤ 200 A/μs, V ≤ 380 V, 开始于T = 25°C
SD
DD
J
4. 本质上独立于操作温度的典型特性
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
www.fairchildsemi.com
2
典型性能特征
图1. 导通区域特性
图2. 传输特性
100
10
1
100
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.3
1
10
20
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流
和温度的关系
100
0.4
10
1
150oC
0.3
VGS = 10V
0.2
25oC
0.1
VGS = 20V
0.1
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
0.001
0.0
0.0
0.3
0.6
0.9
1.2
1.5
0
14
28
42
56
70
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷特性
20000
10
10000
1000
100
10
VDS = 120V
Ciss
V
V
DS = 300V
DS = 480V
8
6
4
2
0
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 11A
40
0.1
0.1
1
10
100
1000
0
10
20
30
50
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
www.fairchildsemi.com
3
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
1.2
2.5
1.1
1.0
0.9
2.0
1.5
1.0
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
2. ID = 11A
0.8
-100
0.5
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
300
图10. 最大漏极电流与壳温的关系
25
10μs
100
20
15
10
5
100μs
10
1ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0
25
0.1
1
10
100
1000
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. Eoss 与漏源极电压的关系
12.0
9.6
7.2
4.8
2.4
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
www.fairchildsemi.com
4
典型性能特性（接上页）
图12. 瞬态热响应曲线
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
*Notes:
Single pulse
1. ZθJC(t) = 0.55oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
100
t1, Rectangular Pulse Duration [sec]
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
5
www.fairchildsemi.com
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位电感开关测试电路与波形
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
www.fairchildsemi.com
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
www.fairchildsemi.com
7
机械尺寸
TO-247 3L
图17. TO-247，模塑，3 引脚，Jedec 变体AB
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格说明并不扩大飞兆半导体全球范围内的条款与条件，尤其
是其中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
© 2014 飞兆半导体公司
FCH170N60 Rev. C2
www.fairchildsemi.com
8
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FCH170N60 Rev. C2
9
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相关型号：
FCH20A18
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 180V V(RRM), Silicon, SIMILAR TO TO-220, 3 PIN
NIEC
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