FCH47N60N_技术文档

MOSFET – N ṿᬣ,

SUPREMOS⁾

600 V, 47 A, 62 mW

FCH47N60N

ᛄꢀ

www.onsemi.cn

SUPREMOS MOSFET ꢀꢀꢁꢂꢃꢄꢁꢅꢆꢇꢂꢈꢃꢄꢅ(SJ)

ꢉꢆ，ꢇꢉꢆꢈꢉꢊꢋꢌꢍꢊꢎSJ MOSFET ꢏꢐꢁꢋꢌꢍꢑꢒꢓ

ꢎ 。 ꢏ ꢐ ̨ ꢑ ꢉ ꢆ

٬

ꢒ ඦ ꢁ ꢓ ꢎ ᖇ Ж ᖰ Ż f ᣠ Į ꢁ Rsp

on-resistance (ꢃꢓꢔꢕꢖꢗ) ，Գꢘꢁრ͓ሇꢙ

٬

ꢚꢉሇ。

SUPREMOS MOSFET ꢏꢐꢛဘꢜ

ר

ꢂꢝრ͓ꢔꢞꢟᕂ

ࡈ

ၴꢉ，

ꢎୢѿꢠ

ࣀ

ᝐꢡꢢꢎ(PFC)、ꢔꢕ

ࡈ

ꢎ/ ꢔꢖꢔꢞ、ꢗꢣꢔꢤꢔꢞ、

ATX ꢔꢞꢘꢓꢙꢔꢞၴꢉ。

V

R

MAX

I MAX

D

DS

DS(ON)

600 V

62 mꢀ @ 10 V

47 A

D

⑙ꢁ

•ꢚ650 V @ T = 150°C

J

•ꢚR

= 51.5 mꢀ (Typ.) @ V = 10 V, I = 23.5 A

GS D

DS(on)

G

•ꢚꢃĮꢥꢦꢔꢧ (ꢛꢜꢝ Q = 115 nC)

g

•ꢚĮꢞꢟꢨꢠꢔꢡ (ꢛꢜꢝC

•ꢚ100% ꢀꢁꢂꢃꢄꢅ

•ꢚꢩ

ר

RoHS ꢪꢢ

= 511 pF)

oss(eff.)

S

N-CHANNEL MOSFET

• This is a Pb−Free Device

ꢂ✈

•ꢚꢣꢫꢙꢬꢤ

ࡈ

•ꢚAC-DC ꢆꢇ

G

D

S

TO−247−3LD

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FCH

47N60N

$Y

&Z

&3

&K

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FCH47N60N

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

1

Publication Order Number:

April, 2021 − Rev. 3

FCH47N60NCN/D

FCH47N60N

ভꢃꢄꢅ⍭ꢆꢇ(T = 25°C ꢈꢉ

׆

ꢊꢋꢌ)

C

׶

ꢈ

ꢉꢊ

FCH47N60N

600

ꢋꢌ

V

ꢍꢎ－ꢇꢎꢆի

᧥ꢎ－ꢇꢎꢆի

ꢍꢎꢆἡ

DSS

30

V

GSS

I

D

47

A

- ᪮ঽ (T = 25°C)

C

- ᪮ঽ (T = 100°C)

29.7

C

I

ꢍꢎꢆἡ

- ௙Β (Ỉ 1)

141

A

mJ

A

DM

E

Ե௙Βꢂꢃ்Ჟ (Ỉ 2)

ꢂꢃꢆἡt (Ỉ 1)

Ო૭ꢂꢃ்Ჟ (Ỉ 1)

MOSFET dv/dt

lꢎ

ٱ

ቂ૭dv/dt ໐Ȝ (Ỉ 3)

ѿ૧

3068

15.7

AS

AR

I

E

3.7

mJ

V/ns

AR

dv/dt

100

20

P

368

W

W/°C

°C

(T = 25°C)

C

D

- ℝĮೃ 25°C Å⛺

2.94

T , T

࿅

ļ٬സʈ

ꢏႆී

ࣔ

−55 to + 150

300

J

STG

T

✈n⋪ᖅŔᣠଇჵ௪ꢏႆ，᢭ҋ૶૓ 1/8”，ᓡঽ 5 Ң

°C

L

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(֢૓ᚡᝧ)

ୢ᥼ꢆիᡕꢁᣠଇ⍭ൺȜጸꢀϷϚŔȜී

ࣔ

，

ࡈ

Ö

׏

்úᔿय。ୢ᥼ᡕꢁÛĵ᪩{℠Ȝ，෦ៀẵƽᚑ

ࡈ

Öѿ்，

׏

்úොೄ

ࡈ

Öᔿय，ᅑ

ڭ

׏

∰ሇ。

1. Ო૭⍭ൺȜ：௙Βꢐႆַ℠nᣠଇꢑꢏ。

2. I = 15.7 A, R = 25 ꢀ, starting T = 25 °C

AS

G

J

3. I ≤ 47 A, di/dt ≤ 200 A/ꢁ s, V ≤ 380 V, starting T = 25 °C

SD

DD

J

ꢍ᎕᧧ᚖꢎꢆ៽ꢏꢐ

ꢑꢒ০ꢈ

⍆᧧

FCH47N60N

ꢍ᎕

ꢓ᎕ꢔẵ

ꢕꢖꢗ

ꢘꢙ

ꢊᲟ

FCH47N60N

TO−247−3LD

Tube

N/A

30 Ե̣

⋍ꢁ்

׶

ꢈ

ꢉꢊ

FCH47N60N

ꢋꢌ

R

ꢑೃ૶૓ꢒꢓᣠଇȜ

ꢑೃꢔ੣ꢒꢓᣠଇȜ

0.34

40

°C/W

ꢂ

JC

JA

ꢂ

www.onsemi.cn

2

FCH47N60N

ꢀᷴ⑙ꢁ(T = 25°C ꢈꢉ

׆

ꢊꢋꢌ)

C

׶

ꢈ

ꢉꢊ

Ἣᚥꢚꢒ

ꢄꢛꢇ ꢜꢝꢇ

ꢄꢅꢇ

ꢋꢌ

ꢞꢟ⑙ꢁ

BV

ꢍꢎ－ꢇꢎϛꢕꢆի

I

= 1 mA, V = 0 V, T = 25°C

600

−

V

DSS

D

GS

C

ꢃ

B

V

ϛꢕꢆիꢏႆꢖꢗ

= 1 mA, ֢૓ 25°C

−

0.78

V/°C

DSS

J

D

/

ꢃ

T

I

ꢘ᧥ꢎꢆիꢍꢎꢆἡ

V

= 480 V, V = 0 V

−

10

ꢁ A

nA

V

DSS

DS

GS

= 480 V, V = 0 V, T = 125°C

100

GS

C

I

᧥ꢎ－ĳꢍꢆἡ

= 30 V, V = 0 V

DS

GSS

ꢠ᫪⑙ꢁ

V

GS(th)

᧥ꢎꢙȜꢆի

V

GS

V

GS

V

DS

= V , I = 250 ꢁ A

2

−

51.5

56

4

62.0

−

DS

D

R

ꢍꢎೃꢇꢎꢚꢛොꢜꢆꢓ

ꢝ

ױ

ꢞො

= 10 V, I = 23.5 A

mꢀ

DS(on)

D

g

= 40 V, I = 23.5 A

S

FS

D

ꢡꢢ⑙ꢁ

C

ꢟͅꢆꢠ

V

= 100 V, V = 0 V,

−

5037

200

2.5

108

511

115

21

6700

270

4.0

−

pF

nC

ꢀ

iss

oss

rss

DS

GS

f = 1 MHz

C

ꢟϚꢆꢠ

֭

ױ

Āꢟꢆꢠ

C

ꢟϚꢆꢠ

V

= 380 V, V = 0 V, f = 1 MHz

GS

oss

DS

C

ꢊꢡꢟϚꢆꢠ

= 0 V to 380 V, V = 0 V

−

oss(eff.)

DS

GS

Q

10 V Ŕ᧥ꢎꢆꢢꢣᲟ

᧥ꢎ－ꢇꢎ᧥ꢎꢆꢢ

᧥ꢎ－ꢍꢎ “ ꢤҲ ” ꢆꢢ

ꢥꢡꢁꢦꢆꢓ (G-S)

V

DS

V

GS

= 380 V, I = 23.5 A,

151

−

g(tot)

D

= 10 V

Q

gs

(ꢋꢌ 4)

Q

34

−

gd

ESR

ꢣꢞ⑙ꢁ

f = 1 MHz

0.9

−

t

ොꢜꢧꢨꢩꢪ

ꢫꢜ⛺ԧꢩꢪ

͓ꢬꢧꢨꢩꢪ

͓ꢬ⛻ℝꢩꢪ

V

= 380 V, I = 23.5 A,

−

11

9

32

28

ns

d(on)

DD

G

D

R

= 4.7 ꢀ

t

r

(ꢋꢌ 4)

t

135

22

280

54

d(off)

t

f

⃯ᥡ -⁰ᥡꢤᥡ

ٱ

⑙ꢁ

I

ꢍꢎ－ꢇꢎlꢎ

ٱ

ᣠଇꢝ

ױ

᪮ঽꢆἡ

ꢍꢎ－ꢇꢎlꢎ

ٱ

ᣠଇꢝ

ױ

௙Βꢆἡ

ꢍꢎ－ꢇꢎlꢎ

ٱ

ꢝ

ױ

ꢆի

֭

ױ

ቂ૭ꢩꢪ

−

47

141

1.2

−

A

S

I

SM

V

SD

V

= 0 V, I = 23.5 A

−

V

GS

SD

t

= 0 V, I = 23.5 A,

495

12

ns

ꢁ C

rr

GS

F

SD

dI /dt = 100 A/ꢁ s

Q

֭

ױ

ቂ૭ꢆꢢ

−

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(֢૓ᚡᝧ)

ꢈꢉ

׆

ꢊꢋꢌ，“ꢆꢭꢮሇ”ጸꢯꢀϷϚŔꢰꢱϷꢄꢅꢲÖ⛻Ŕ

ڡ

ሇ்֢ꢗ。ୢ᥼ई⛽

׬

ꢲÖ⛻ꢳꢴ，

ڡ

ሇ்

׏

்⛾“ꢆꢭꢮሇ”ጸꢯ

ꢀꢱϷሇ்֢ꢗ⛽⛰ೄ。

4. ꢵꢶ⛺ꢷꢸn࿅ļꢏႆŔ͘५ꢮሇ。

www.onsemi.cn

3

FCH47N60N

ꢜꢝꢁ்⑙ꢥ

300

100

500

V

GS

= 15.0 V

10.0 V

8.0 V

6.0 V

100

10

1

5.0 V

150°C

25°C

−55°C

10

*Notes:

1. V = 20 V

1. 250 ꢁ s Pulse Test

DS

2. 250 ꢁ s Pulse Test

2. T = 25°C

C

1

0.1

2

4

6

8

1

10

30

V

GS

, Gate−Source Voltage [V]

ࣞ

2. Āᩣ⑙ꢁ

V

DS

, Drain−Source Voltage [V]

ࣞ

1. ꢠ᫪Ԛি⑙ꢁ

140

120

100

80

400

100

150°C

V

= 10 V

GS

25°C

10

1

V

GS

= 20 V

60

*Notes:

1. V = 0 V

2. 250 ꢁ s Pulse Test

GS

*Note: T = 25°C

C

40

0.4

0.6

0.8

1.0

1.2

1.4

0

40

80

120

160

V

SD

, Body Diode Forward Voltage [V]

I , Drain Current [A]

D

ࣞ

3. ꢠ᫪ꢀℋָӶꢎ⃯ᥡꢀἡ

٬

᧥ᥡꢀի

ࣞ

4. ĳꢤᥡ

ٱ

ᵃ

ױ

ꢀիָӶꢎ⁰ꢀἡ

٬

ꢁႆ

5

10

8

10

C

oss

4

3

V

DS

V

DS

V

DS

= 120 V

= 300 V

= 480 V

10

C

iss

10

6

C

rss

2

10

4

2

0

*Notes:

1. V = 0 V

GS

2. f = 1 MHz

10

1

C

= C + C (C = shorted)

gs gd ds

ds

= C

gd

iss

oss

rss

= C + C

gd

*Note: I = 23.5 A

D

0.1

1

10

100

600

0

30

60

90

120

V

DS

, Drain−Source Voltage [V]

ࣞ

5. ꢀ඙⑙ꢁ

Q , Total Gate Charge [nC]

g

ࣞ

6. ᧥ᥡꢀ็

www.onsemi.cn

4

FCH47N60N

ꢜꢝꢁ்⑙ꢥ(ᖅ⛺ꢹ)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

0.9

*Notes:

1. V = 0 V

1. V = 10 V

GS

2. I = 1 mA

2. I = 23.5 A

D

0.8

−100 −50

0

50

100

150

200

−100 −50

0

50

100

150

200

T , Junction Temperature [°C]

J

T , Junction Temperature [°C]

J

ࣞ

7. ϛՏꢀիָӶꢎꢁႆ

ࣞ

8. ꢠ᫪ꢀℋָӶꢎꢁႆ

50

40

30

20

10

0

1000

100

10

10 ꢁ s

100 ꢁ s

1 ms

10 ms

1

Operation in This Area

is Limited by R

DS(on)

*Notes:

0.1

0.01

1. T = 25°C

C

J

2. T = 150°C

3. Single Pulse

1

10

100

1000

50

75

100

125

150

25

T , Case Temperature [°C]

C

V

DS

, Drain−Source Voltage [V]

ࣞ

9. ꢄꢅ൩͈࿅ļԚ

ࣞ

10. ꢄꢅ⃯ᥡꢀἡꢎꢦĳꢁႆ

1

0.5

0.1

0.2

P

0.1

0.05

0.02

DM

t

1

t

0.01

2

*Notes:

1. Z (t) = 0.24°C/W Max.

Single Pulse

ꢂ

JC

2. Duty Factor, D = t /t

1

2

3. T − T = P

* Z (t)

ꢂ

JC

JM

C

DM

0.001

3

2

1

5

4

10

10−

1

10−

t , Rectangular Pulse Duration [sec]

1

ࣞ

11. ɼꢢ⋍ꢧꢂꢨএ

www.onsemi.cn

5

FCH47N60N

V

GS

R

Q

L

g

V_DS

V

GS

Q

gs

gd

DUT

I

G

= const.

Charge

ࣞ

12. ᧥ᥡꢀ็ἫᚥꢀᢿꢎỂꢩ

R

L

V

DS

GS

90%

V

DS

V

DD

V

GS

R

G

10%

V

DUT

V

GS

t

d(off)

d(on)

t

r

t

f

t

on

t

off

ࣞ

13. ℋꢁꢣꢞἫᚥꢀᢿꢎỂꢩ

L

2

1

2

E_AS

+

LI_AS

V

DS

BV

DSS

I

D

I

AS

R

G

V

DD

I (t)

D

DUT

V

DD

V

GS

V

DS

(t)

t

p

Time

t

p

ࣞ

14. ∮

٭

ꢌꢪꢁꢣꢞἫᚥꢀᢿꢎỂꢩ

www.onsemi.cn

6

FCH47N60N

+

DUT

V

DS

−

I

SD

L

Driver

R

G

Same Type

as DUT

V

DD

V

GS

− dv/dt controlled by R

G

− I controlled by pulse period

SD

Gate Pulse Width

D +

Gate Pulse Period

V

GS

10 V

(Driver)

I

, Body Diode Forward Current

FM

I

di/dt

SD

(DUT)

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

V

DD

V

SD

(DUT)

Body Diode

Forward Voltage Drop

ࣞ

15. ꢤᥡ

ٱ

ꢫꢬ dv/dt ꢭꢇἫᚥꢀᢿꢎỂꢩ

SUPREMOS is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

www.onsemi.cn

7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK

ISSUE A

DATE 31 JAN 2019

P1

D2

A

E

P

A

A2

Q

E2

S

D1

D

E1

B

2

1

3

L1

A1

b4

L

c

(3X) b

(2X) b2

M

B A

0.25

MILLIMETERS

MIN NOM MAX

4.58 4.70 4.82

2.20 2.40 2.60

1.40 1.50 1.60

1.17 1.26 1.35

1.53 1.65 1.77

2.42 2.54 2.66

0.51 0.61 0.71

20.32 20.57 20.82

(2X) e

DIM

A

A1

A2

b

b2

b4

c

GENERIC

D

MARKING DIAGRAM*

D1 13.08

~

D2

E

0.51 0.93 1.35

15.37 15.62 15.87

AYWWZZ

XXXXXXX

E1 12.81

~

E2

e

L

4.96 5.08 5.20

5.56

15.75 16.00 16.25

3.69 3.81 3.93

3.51 3.58 3.65

XXXX = Specific Device Code

~

A

Y

= Assembly Location

= Year

WW = Work Week

ZZ = Assembly Lot Code

L1

P

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

P1 6.60 6.80 7.00

Q

S

5.34 5.46 5.58

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13851G

TO−247−3LD SHORT LEAD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

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TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

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ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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


型号：	FCH47N60N
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，47 A，62 mΩ，TO-247
文件：	总9页 (文件大小：495K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FCH47N60N [ONSEMI]

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