FCI7N60 [ONSEMI]
N 沟道 SuperFET® MOSFET 600V, 7A, 600mΩ;
| 型号： | FCI7N60 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® MOSFET 600V, 7A, 600mΩ |
| 文件： | 总9页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年 1 月
FCI7N60
®
N 沟道 SuperFET MOSFET
600 V, 7 A, 600 m
特性
说明
SuperFET®MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
的开关性能、 dv/dt 额定值和更高雪崩能量。因此， SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正 (PFC)、服务
器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。
•
•
•
•
•
•
650 V @ TJ = 150°C
典型值 RDS(on) = 530 m
超低栅极电荷 （典型值 Qg = 23 nC）
低有效输出电容 （典型值 Coss(eff.)= 60 pF）
100% 经过雪崩测试
符合 RoHS 标准
应用
•
•
•
照明
太阳能逆变器
AC-DC 电源
D
G
G
I2-PAK
D
S
S
MOSFET 最大额定值TC = 25°C 除非另有说明。
FCI7N60
600
7
符号
VDSS
参数
单位
V
漏极 - 源极电压
- 连续 (TC = 25°C)
- 连续 (TC = 100°C)
- 脉冲
ID
A
漏极电流
4.4
IDM
21
A
V
漏极电流
（注 1）
VGSS
EAS
IAR
±30
230
7
栅极 - 源极电压
单脉冲雪崩能量
雪崩电流
mJ
A
（注 2）
（注 1）
（注 1）
（注 3）
EAR
dv/dt
8.3
mJ
V/ns
W
重复雪崩能量
二极管恢复 dv/dt 峰值
4.5
(TC = 25°C)
83
PD
功耗
0.67
W/°C
°C
- 超过 25°C 时降额
TJ, TSTG
TL
工作和存储温度范围
-55 至 +150
300
°C
用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒
热性能
FCI7N60
1.5
符号
RJC
参数
结至外壳热阻最大值
单位
°C/W
°C/W
RJA
结至环境热阻最大值
62.5
www.fairchildsemi.com
©2008 飞兆半导体公司
1
FCI7N60 Rev. C1
封装标识与定购信息
器件编号
顶标
封装
I2-PAK
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FCI7N60
FCI7N60
不适用
50 单元
电气特性 TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
VGS = 0 V, ID = 250 μA, TC = 25°C
VGS = 0 V, ID = 250 μA, TC = 150°C
600
-
-
-
-
V
V
漏极－源极击穿电压
650
BVDSS
/ TJ
BVDS
击穿电压温度系数
-
0.6
-
V/°C
V
ID = 250 μA，参考 25°C
VGS = 0 V, ID = 7 A
-
-
-
-
700
-
1
漏源极雪崩击穿电压
零栅极电压漏极电流
栅极 - 体漏电流
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±30 V, VDS = 0 V
-
-
-
IDSS
IGSS
A
10
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A
3.0
-
0.53
6
5.0
0.6
-
V
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
710
380
34
920
500
-
pF
pF
pF
pF
pF
输入电容
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
输出电容
Crss
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
22
29
-
Coss(eff.)
60
有效输出电容
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
35
55
80
120
160
75
ns
ns
导通延迟时间
VDD = 300 V, ID = 7 A,
开通上升时间
V
GS = 10 V, RG = 25
75
ns
关断延迟时间
32
ns
关断下降时间
（说明 4）
（说明 4）
Qg(tot)
Qgs
Qgd
23
30
nC
nC
nC
10 V 的栅极电荷总量
栅极 - 源极栅极电荷
栅极 - 漏极 “ 密勒 ” 电荷
V
V
DS = 480 V, ID = 7 A,
GS = 10 V
4.2
11.5
5.5
-
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
7
21
1.4
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 7 A
-
V
360
4.5
ns
C
VGS = 0 V, ISD = 7 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 3.5 A， V = 50 V， R = 25，启动 T = 25°C。
AS
DD
G
J
3. I 7 A， di/dt 200 A/s， V BV
，启动 T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2008 飞兆半导体公司
2
FCI7N60 Rev. C1
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
100
10-1
Bottom : 5.5 V
150C
25C
100
-55C
* Notes :
1. 250s Pulse Test
2. TC = 25C
* Note
1. VDS = 40V
2. 250s Pulse Test
10-1
2
10-1
100
101
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图 3. 导通电阻变化与漏极电流和栅极电压
图 4. 体二极管正向电压变化与源极电流和
温度的关系
2.0
1.8
1.6
1.4
101
VGS = 10V
1.2
1.0
0.8
0.6
100
150C
25C
VGS = 20V
0.4
0.2
0.0
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25C
10-1
0.2
0
5
10
15
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
图 5. 电容特性
图 6. 栅极电荷
3000
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
Coss = Cds + Cgd
Crss = Cgd
VDS = 400V
2000
1000
Coss
6
* Notes :
1. VGS = 0 V
Ciss
4
2. f = 1 MHz
Crss
2
* Note : ID = 7A
20
0
0
0
10-1
100
101
5
10
15
25
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
www.fairchildsemi.com
©2008 飞兆半导体公司
3
FCI7N60 Rev. C1
典型性能特征（接上页）
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
* Notes :
1. VGS = 0 V
* Notes :
1. VGS = 10 V
2. ID = 250A
2. ID = 3.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳体温度
10.0
7.5
5.0
2.5
0.0
102
Operation in This Area
is Limited by R DS(on)
100 us
1 ms
101
10 ms
DC
100
* Notes :
1. TC = 25C
10-1
2. TJ = 150C
3. Single Pulse
10-2
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [C]
图 11. 瞬态热响应曲线
100
D =0.5
0.2
0.1
*
N otes
1. ZJC(t)
:
=
1.5 C /W M ax.
2. D uty Factor, D =t1/t2
10-1
0.05
3. TJM
- TC = PDM * ZJC(t)
0.02
0.01
PDM
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
www.fairchildsemi.com
©2008 飞兆半导体公司
4
FCI7N60 Rev. C1
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= 常量
G
Charge
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
图 14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
5
FCI7N60 Rev. C1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 二极管恢复 dv/dt 峰值测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
6
FCI7N60 Rev. C1
10.29
9.65
A
4.83
4.06
B
8.33
6.22
1.40
1.14
1.40
1.00
7°
7.88
6.86
9.65
8.64
5°
5°
2
1
3
3.96
2.80
B
2.13
14.73
12.70
2.79
2.03
1.78
1.14
SEE NOTE "G"
B
0.64
0.33
B
2.54
0.90
0.64
B
5.08
M
0.254 A
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
TO262 JEDEC VARIATION AA.
B
DOES NOT COMPLY JEDEC STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ANSI
Y14.5-1994.
F. LOCATION OF PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF PACKAGE)
G. MAXIMUM WIDTH FOR F102 DEVICE = 1.35 MAX.
H. DRAWING FILE NAME: TO262A03REV6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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