FCMT299N60 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，12 A，299 mΩ，Power88;
| 型号： | FCMT299N60 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，12 A，299 mΩ，Power88 |
| 文件： | 总11页 (文件大小：716K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2014
FCMT299N60
N-Channel SuperFET II MOSFET
®
600 V, 12 A, 299 mΩ
Features
Description
•
650 V @ TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as server/telecom power, adaptor and solar
inverter applications.
•
RDS(on) = 250 mΩ (Typ.)
•
•
•
•
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
100% Avalanche Tested
RoHS Compliant
Applications
The Power88 package is an ultra-slim surface-mount package
(1 mm high) with a low profile and small footprint (8x8 mm2).
SuperFET II MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance
and separated power and drive sources. Power88 offers Mois-
ture Sensitivity Level 1 (MSL 1).
•
•
•
Server and Telecom Power Supplies
Solar Inverters
Adaptors
D
S2
S2
G
S1 : Driver Source
S2 : Power Source
S1
G
Power88
S1 S2
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FCMT299N60
Unit
Drain to Source Voltage
Gate to Source Voltage
600
±20
±30
12
V
-DC
VGSS
ID
V
A
-AC
(f > 1 Hz)
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Drain Current
7.9
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
36
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
234
2.5
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
1.25
20
mJ
V/ns
V/ns
W
W/oC
oC
dv/dt
PD
100
125
1
(TC = 25oC)
- Derate above 25oC
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
Thermal Characteristics
Symbol
Parameter
Unit
FCMT299N60
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
1.0
45
oC/W
©2014 Fairchild Semiconductor Corporation
FCMT299N60 Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCMT299N60
FCMT299N60
Power88
-
-
3000
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
GS = 0 V, ID = 10 mA, TC = 25°C
600
650
-
-
-
-
BVDSS
Drain to Source Breakdown Voltage
V
VGS = 0 V, ID = 10 mA, TC = 150°C
D = 10 mA, Referenced to 25oC
DS = 600 V, VGS = 0 V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
-
-
0.67
-
V/oC
V
-
1.2
-
1
-
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, VGS = 0 V, TC = 125oC
-
-
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 6 A
VDS = 20 V, ID = 6 A
2.5
-
3.5
0.299
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.25
12
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1465
30
1948
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 380 V, VGS = 0 V
f = 1 MHz
Coss
Crss
Output Capacitance
40
-
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
4.87
127
39
Coss eff.
Qg(tot)
Qgs
VDS = 0 V to 480 V, VGS = 0 V
-
51
-
V
V
DS = 380 V, ID = 6 A
GS = 10 V
6
(Note 4)
Qgd
14
-
ESR
f = 1 MHz
0.8
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
19
9
48
28
ns
ns
ns
ns
VDD = 380 V, ID = 6 A
V
GS = 10 V, Rg = 4.7 Ω
51
7
112
24
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
12
36
1.2
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 6 A
-
V
262
3.8
ns
μC
V
GS = 0 V, ISD = 6 A
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 2.5A, R = 25Ω, Starting T = 25°C
AS
G
J
3. I ≤ 6A, di/dt ≤ 200A/μs, V ≤ BVDSS, Starting T = 25°C
SD
DD
J
4. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FCMT299N60 Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
50
40
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
6.0V
5.5V
5.0V
4.5V
2. 250μs Pulse Test
150oC
10
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.4
1
1
10
20
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.5
100
10
1
150oC
0.4
VGS = 10V
25oC
0.3
0.1
VGS = 20V
0.2
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
24 32
ID, Drain Current [A]
2. 250μs Pulse Test
0.1
0.001
0
8
16
40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
Ciss
VDS = 120V
VDS = 300V
1000
8
VDS = 480V
100
10
1
Coss
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 6A
32
0.1
0.1
1
10
100
600
0
8
16
24
40
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
FCMT299N60 Rev. C0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
2.5
2.0
1.5
0.9
1.0
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
2. ID = 6A
0.8
-100
0.5
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
14
Rθ JC = 1oC/W
10μs
12
10
100μs
9
6
3
0
1
0.1
1ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
7.0
5.6
4.2
2.8
1.4
0
0
120
240
360
480
600
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
FCMT299N60 Rev. C0
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
2
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
0.02
0.01
*Notes:
1. ZθJC(t) = 1.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
t1, Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FCMT299N60 Rev. C0
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FCMT299N60 Rev. C0
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
FCMT299N60 Rev. C0
7
Figure 17. Molded Package, Power88, 4 Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_PQBKR-004
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FCMT299N60 Rev. C0
8
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Awinda®
F-PFS™
®*
FRFET®
tm
®
AX-CAP®*
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
PowerTrench®
PowerXS™
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Programmable Active Droop™
QFET®
QS™
TINYOPTO™
TinyPower™
TinyPWM™
GTO™
Quiet Series™
RapidConfigure™
™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
TinyWire™
TranSiC™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
TriFault Detect™
TRUECURRENT®*
μSerDes™
MicroPak™
®
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
STEALTH™
UHC®
Fairchild®
SuperFET®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
MTx®
FAST®
FastvCore™
FETBench™
FPS™
MVN®
mWSaver®
OptoHiT™
Xsens™
? ? ™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Datasheet contains the design specifications for product development. Specifications
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Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I71
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FCMT299N60 Rev. C0
9
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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