FCP110N65F [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®， 650V，35A，110mΩ，TO-220;
| 型号： | FCP110N65F |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®， 650V，35A，110mΩ，TO-220 |
| 文件： | 总10页 (文件大小：846K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年10 月
FCP110N65F
®
®
N 沟道SuperFET II FRFET MOSFET
650 V, 35 A, 110 mΩ
特性
•
描述
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色的低导通电阻和更低栅极电荷性能的全新高压超级结
(SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供
卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服
务器 / 电信电源、平板电视电源、ATX 电源及工业电源应用。
SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可
去除额外元件，提高系统可靠性。
700 V @ TJ = 150°C
• 典型值RDS(on) = 96 mΩ （典型值）
• 超低栅极电荷（典型值Qg= 98 nC）
• 低有效输出电容（典型值Coss(eff.)= 464 pF)
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
•
LCD / LED / PDP TV
• 通信/ 服务器电源
• 太阳能逆变器
•
AC-DC 电源
D
G
D
S
G
TO-220
S
绝对最大额定值TC = 25°C 除非另有说明。
FCP110N65F
符号
参数
单位
VDSS
VGSS
650
±20
±30
35
V
漏极－源极电压
栅极－源极电压
- DC
- AC
V
A
(f > 1 Hz)
- 连续(TC = 25°C)
ID
漏极电流
24
- 连续(TC = 100°C)
- 脉冲
IDM
EAS
IAR
105
809
8
A
mJ
A
漏极电流
（注1）
（注2）
（注1）
（注1）
单脉冲雪崩能量
雪崩电流
EAR
3.57
100
50
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
二极管恢复dv/dt 峰值
（注3）
(TC = 25°C)
357
2.86
W
W/°C
°C
功耗
- 高于25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
用于焊接的最高引脚温度，
距离外壳1/8”，持续5 秒
300
°C
热性能
FCP110N65F
0.35
符号
RθJC
参数
单位
结至外壳热阻最大值
结至环境热阻最大值
°C/W
RθJA
62.5
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
1
www.fairchildsemi.com
封装标识与定购信息
器件编号
顶标
FCP110N65F
封装
包装方法
塑料管
卷尺寸
带宽
数量
FCP110N65F
TO-220
N/A
N/A
50 个
电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
V
GS = 0 V, ID = 10 mA, TJ = 25°C
650
700
-
-
-
-
V
漏极－源极击穿电压
VGS = 0 V, ID = 10 mA, TJ = 150°C
ΔBVDSS
/ ΔTJ
击穿电压温度系数
-
0.67
-
V/°C
ID = 10 mA，参考25°C 数值
V
DS = 650 V, VGS = 0 V
-
-
-
-
110
-
10
-
IDSS
IGSS
μA
零栅极电压漏极电流
栅极－体漏电流
VDS = 520 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 3.5 mA
VGS = 10 V, ID = 17.5 A
VDS = 20 V, ID = 17.5 A
3
-
-
5
110
-
V
mΩ
S
栅极阈值电压
96
30
漏极至源极静态导通电阻
正向跨导
-
动态特性
Ciss
-
-
-
-
-
-
-
-
-
3680
110
0.65
65
4895
pF
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
145
输出电容
Crss
-
反向传输电容
输出电容
Coss
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
Coss(eff.)
Qg(tot)
Qgs
464
98
-
有效输出电容
10 V 的栅极电荷总量
栅极－源极栅极电荷
栅极－漏极“ 米勒” 电荷
等效串联电阻
VDS = 0 V 至400 V, VGS = 0 V
145
V
V
DS = 380 V, ID = 17.5 A,
GS = 10 V
20
-
-
-
（注4）
Qgd
43
ESR
f = 1 MHz
0.7
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
31
21
89
5.7
72
52
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 17.5 A,
V
GS = 10 V, Rg = 4.7 Ω
188
21
（注4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
35
105
1.2
-
A
A
漏极－源极二极管最大正向连续电流
ISM
VSD
trr
漏极－源极二极管最大正向脉冲电流
漏极－源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 17.5 A
-
V
133
0.67
ns
μC
VGS = 0 V, ISD = 17.5 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 8 A, R = 25 Ω, 开始于T = 25°C。
AS
G
J
3. I ≤ 17.5 A, di/dt ≤ 200 A/μs, V ≤ 380 V, 开始于T = 25°C。
SD
DD
J
4. 典型特性本质上独立于工作温度。
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
2
www.fairchildsemi.com
典型性能特征
图1. 导通区域特性
图2. 传输特性
200
200
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
100
100
10
1
7.0V
6.5V
6.0V
5.5V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.3
1
10
20
3
4
5
6
7
8
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流和温度的关系
0.25
200
100
0.20
10
150oC
1
0.15
25oC
VGS = 10V
0.1
0.10
VGS = 20V
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
60 80
ID, Drain Current [A]
2. 250μs Pulse Test
0.05
0.001
0
20
40
100
0.0
0.3
0.6
0.9
1.2
1.5
1.8
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
10
100000
*Note: ID = 17.5A
VDS = 130V
VDS = 325V
10000
1000
Ciss
8
6
4
2
0
VDS = 520V
Coss
100
*Note:
1. VGS = 0V
10
1
Crss
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
0.1
0.1
0
20
40
60
80
100
1
10
100
660
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
3
www.fairchildsemi.com
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
2.5
1.15
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 17.5A
2.0
2. ID = 10mA
1.10
1.05
1.00
0.95
0.90
1.5
1.0
0.5
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
40
300
100
10μs
100μs
30
20
10
0
10
1ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. Eoss 与漏源极电压的关系
20
16
12
8
4
0
0
132
264
396
528
660
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
4
www.fairchildsemi.com
典型性能特性（接上页）
图12. 瞬态热响应曲线
1
0.5
0.1
0.01
0.2
PDM
0.1
t1
0.05
t2
0.02
0.01
*Notes:
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
10-5
10-4
10-3
t1, Rectangular Pulse Duration [sec]
10-2
10-1
1
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
5
www.fairchildsemi.com
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位电感开关测试电路与波形
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
6
www.fairchildsemi.com
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
© 2014 飞兆半导体公司
FCP110N65F Rev. C0
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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