FCP170N60 [ONSEMI]
N 沟道 SuperFET® MOSFET 600 V,22 A,170 mΩ;![FCP170N60](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/FCP170N60_2237016_icpdf.jpg)
型号: | FCP170N60 |
厂家: | ![]() |
描述: | N 沟道 SuperFET® MOSFET 600 V,22 A,170 mΩ |
文件: | 总10页 (文件大小:599K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年 3 月
FCP170N60
®
N- 沟道 SuperFET II MOSFET
600 V, 22 A, 170 mΩ
特性
描述
SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低
导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET
系列产品。这项先进技术专用于最小化传导损耗,提供卓越的开
关性能,并能够承受极端 dv/dt 额定值和更高雪崩能量。因此,
SuperFET II MOSFET 适用于系统小型化和高效化的各种各样的
AC-DC 功率转换的应用中。
•
•
•
•
•
•
650 V @ TJ = 150 °C
典型值 RDS(on) = 150 mΩ
超低栅极电荷 (典型值 Qg = 42 nC)
低有效输出电容 (典型值 Coss(eff.) = 190 pF)
100% 经过雪崩测试
符合 RoHS 标准
应用
•
•
•
通信 / 服务器电源
工业电源
AC-DC 电源
D
G
G
D
S
TO-220
S
最大绝对额定值 TC = 25 °C 除非另有说明。
FCP170N60
600
±20
±30
22
符号
参数
单位
VDSS
VGSS
V
漏极-源极电压
栅极-源极电压
- DC
V
A
- 交流
- 连续 (TC = 25 °C)
ID
漏极电流
14
- 连续 (TC = 100 °C)
- 脉冲
IDM
EAS
IAR
66
A
mJ
A
漏极电流
(注 1)
(注 2)
(注 1)
(注 1)
(注 3)
525
5
单脉冲雪崩能量
雪崩电流
EAR
2.27
100
20
mJ
重复雪崩能量
MOSFET dv/dt
二极管恢复 dv/dt 峰值
dv/dt
PD
V/ns
(TC = 25 °C)
227
1.82
W
W/°C
°C
功耗
- 高于 25 °C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至 +150
300
°C
用于焊接的最高引脚温度,距离外壳 1/8”,持续 5 秒
热性能
FCP170N60
符号
RθJC
参数
结至外壳热阻最大值
单位
0.55
40
°C/W
RθJA
结至环境热阻最大值
www.fairchildsemi.com
1
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
封装标识与定购信息
器件编号
顶标
FCP170N60
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FCP170N60
TO-220
不适用
50 个
电气特性 TC = 25 °C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
ID = 10 mA,VGS = 0 V,TJ = 25 °C
ID = 10 mA,VGS = 0 V, TJ = 150 °C
600
650
-
-
-
-
V
V
漏极-源极击穿电压
ΔBVDSS
/ ΔTJ
-
0.67
-
V/°C
击穿电压温度系数
ID = 10 mA,参考 25 °C 数值
VDS = 600 V, VGS = 0 V
-
-
-
-
1.2
-
1
-
IDSS
IGSS
μA
零栅极电压漏极电流
栅极-体漏电流
VDS = 480 V, VGS = 0 V,TC = 125 °C
VGS = ±20 V, VDS = 0 V
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 11 A
VDS = 20 V, ID = 11 A
2.5
-
3.5
170
-
V
mΩ
S
栅极阈值电压
-
-
150
17
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
2150
60
2860
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 380 V, VGS = 0 V
f = 1 MHz
Coss
80
-
输出电容
Crss
2.65
190
42
反向传输电容
Coss (eff.)
Qg(tot)
Qgs
-
有效输出电容
VDS = 0 V 至 480 V, VGS = 0 V
55
-
10 V 的栅极电荷总量
栅极-源极栅极电荷
栅极-漏极 “ 米勒 ” 电荷
等效串联电阻
VDS = 380 V, ID = 11 A,
9
V
GS = 10 V
(注 4)
Qgd
11
-
ESR
f = 1 MHz
0.95
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
21
12
55
3.8
50
35
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 11 A,
V
GS = 10 V, Rg = 4.7 Ω
120
18
(注 4)
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
22
66
1.2
-
A
A
漏极-源极二极管最大正向连续电流
ISM
VSD
trr
漏极-源极二极管最大正向脉冲电流
漏极-源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 11 A
-
V
346
6.2
ns
μC
VGS = 0 V, ISD = 11 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注:
1. 重复额定值:脉冲宽度受限于最大结温。
2. I = 5 A, R = 25 Ω,开始于 T = 25 °C。
AS
G
J
3. I ≤ 11 A, di/dt ≤ 200 A/μs, V ≤ 380 V,开始于 T = 25 °C。
SD
DD
J
4. 本质上独立于操作温度的典型特性。
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
www.fairchildsemi.com
2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
100
100
10
1
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.3
1
10
20
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图 3. 导通电阻变化与
漏极电流和栅极电压的关系
图 4. 体二极管正向电压
变化与源极电流和温度的关系
100
10
0.4
0.3
0.2
0.1
0.0
150oC
1
VGS = 10V
VGS = 20V
25oC
0.1
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
0.001
0.0
0.3
0.6
0.9
1.2
1.5
0
14
28
42
56
70
VSD, Body Diode Forward Voltage [V]
图 6. 栅极电荷特性
VDS = 120V
ID, Drain Current [A]
图 5. 电容特性
20000
10000
10
8
Ciss
VDS = 300V
DS = 480V
V
1000
100
10
Coss
6
*Note:
1. VGS = 0V
4
Crss
2. f = 1MHz
2
1
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 11A
40
0.1
0.1
0
1
10
100
1000
0
10
20
30
50
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
www.fairchildsemi.com
3
典型性能特征 (接上页)
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
2. ID = 11A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳温的关系
300
100
25
20
15
10
5
10μs
100μs
10
1
1ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
3. Single Pulse
0.01
0
25
0.1
1
10
100
1000
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图 11. Eoss 与漏源极电压的关系
12.0
9.6
7.2
4.8
2.4
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
www.fairchildsemi.com
4
典型性能特征 (接上页)
图 12. 瞬态热响应曲线
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
*Notes:
Single pulse
1. ZθJC(t) = 0.55oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
100
t1, Rectangular Pulse Duration [sec]
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
5
www.fairchildsemi.com
I = 常量
G
图 13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 14. 阻性开关测试电路与波形
VGS
图 15. 非箝位电感开关测试电路与波形
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
www.fairchildsemi.com
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 16. 二极管恢复 dv/dt 峰值测试电路与波形
© 2014 飞兆半导体公司
FCP170N60 Rev. C1
www.fairchildsemi.com
7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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