FCP380N60E [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，10.2A，380 mΩ，TO-220;
| 型号： | FCP380N60E |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，10.2A，380 mΩ，TO-220 |
| 文件： | 总11页 (文件大小：880K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年2 月
FCP380N60E / FCPF380N60E
®
N 沟道SuperFET II Easy-Drive MOSFET
600 V, 10.2 A, 380 m
特性
•
说明
SuperFET® II MOSFET 是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
650 V @ TJ = 150°C
• 典型值RDS(on) = 320 m
• 超低栅极电荷（典型值Qg = 34 nC)
• 低有效输出电容（典型值Coss(eff.)= 97 pF)
的开关性能、dv/dt
额定值和更高雪崩能量。类似地，与
SuperFET II MOSFET 系列相比，SuperFET II MOSFET Easy-
Drive 系列具有略为缓慢的上升和下降时间。该系列产品型号以
“E” 作为前缀，有助于解决 EMI 问题，设计部署更为简单。如需
获得更快的开关速度并用于开关损耗必须尽可能低的应用中，请
考虑使用SuperFET II MOSFET 系列。
•
100% 经过雪崩测试
• 集成栅极电阻
• 符合RoHS 标准
应用
•
LCD / LED / PDP 电视照明
• 太阳能逆变器
AC-DC 电源
•
D
G
G
G
D
S
D
TO-220F
TO-220
S
S
绝对最大额定值TC = 25°C 除非另有说明。
FCP380N60E FCPF380N60E
符号
VDSS
参数
单位
600
±20
±30
V
漏极－源极电压
栅极－源极电压
- DC
- AC
VGSS
ID
V
A
(f > 1 Hz)
10.2
6.4
10.2*
6.4*
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
漏极电流
IDM
EAS
IAR
30.6
30.6*
A
mJ
A
漏极电流
（说明1）
（说明2）
（说明1）
（说明1）
211.6
2.3
单脉冲雪崩能量
雪崩电流
EAR
1.06
100
20
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
二极管恢复dv/dt 峰值
（说明3）
(TC = 25°C)
106
31
W
W/°C
°C
功耗
0.85
0.25
- 降低至25°C 以上
TJ, TSTG
TL
-55 至+150
工作和存储温度范围
300
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
* 漏极电流受限于最大结温
热性能
FCP380N60E FCPF380N60E
符号
参数
单位
RJC
RJA
1.18
62.5
4
结至外壳热阻最大值
结至环境热阻最大值
°C/W
62.5
www.fairchildsemi.com
© 2012 飞兆半导体公司
1
FCP380N60E / FCPF380N60E Rev. C8
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
不适用
带宽
数量
50 个
50 个
FCP380N60E
FCPF380N60E
FCP380N60E
TO-220
不适用
不适用
FCPF380N60E
TO-220F
塑料管
电气特性，TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
600
650
-
-
-
-
BVDSS
V
漏极－源极击穿电压
BVDSS
/ TJ
BVDS
IDSS
IGSS
击穿电压温度系数
ID=10 mA，参考条件为25°C
-
0.67
-
V/°C
V
VGS = 0 V, ID = 10 A
-
-
-
-
700
-
1
漏极- 源极雪崩击穿电压
零栅极电压漏极电流
栅极- 体漏电流
VDS = 480 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
-
-
-
A
10
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
2.5
-
3.5
0.38
-
V
S
栅极阈值电压
-
-
0.32
10
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
1330
945
60
1770
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
1260
输出电容
90
-
反向传输电容
输出电容
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 380 V, VGS = 0 V, f = 1 MHz
25
VDS = 0 V 至480 V, VGS = 0 V
97
-
有效输出电容
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻
34
45
-
VDS = 380 V, ID = 5 A,
5.3
13
V
GS = 10 V
（说明4）
Qgd
-
ESR
f = 1 MHz
6
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
17
9
44
28
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 5 A,
V
GS = 10 V, R = 4.7
64
10
138
30
（说明4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
10.2
30.6
1.2
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
-
-
VGS = 0 V, ISD = 5 A
V
240
3
ns
C
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 2.3 A，V = 50 V，R = 25 ，启动T = 25°C。
AS
DD
G
J
3. I 5.1 A，di/dt 200 A/s，V BV
，启动T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
© 2012 飞兆半导体公司
2
FCP380N60E / FCPF380N60E Rev. C8
典型性能特征
图1. 通态区域特性
图2. 传递特性
50
50
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
10
150oC
25oC
1
1
-55oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
0.1
0.1
0.1
1
10
20
2
4
6
8
10
VDS, Drain to Source Voltage[V]
VGS, Gate to Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源极电流和温度
100
0.8
0.7
0.6
0.5
150oC
10
25oC
VGS = 10V
0.4
VGS = 20V
*Notes:
1. VGS = 0V
0.3
*Note: TC = 25oC
20 25
ID, Drain Current [A]
2. 250s Pulse Test
0.2
1
0.2
0
5
10
15
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
10
10000
VDS = 120V
VDS = 300V
VDS = 480V
Ciss
8
6
4
2
0
1000
100
Coss
*Note:
1. VGS = 0V
10
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Crss
= C + C
ds
oss
rss
gd
1
0.5
0.1
= C
gd
*Note: ID = 5A
25 30 35
0
5
10
15
20
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
3
典型性能特征（接上页）
图7. 击穿电压变化与温度
图8. 导通电阻变化与温度
3.0
1.15
2.5
2.0
1.5
1.0
0.5
0.0
1.10
1.05
1.00
0.95
0.90
0.85
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
2. ID = 5A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区(FCP380N60E)
图10. 最大安全操作区(FCPF380N60E)
50
50
10s
10
10s
10
1
100s
1ms
10ms
DC
100s
1ms
1
10ms
Operation in This Area
is Limited by R DS(on)
Operation in This Area
DC
is Limited by R DS(on)
*Notes:
1. TC = 25oC
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
2. TJ = 150oC
3. Single Pulse
3. Single Pulse
0.1
0.1
0.01
1
10
100
1000
0.1
1
10
100
1000
VDS, Drain to Source Voltage [V]
VDS, Drain to Source Voltage [V]
图11. 最大漏极电流与壳体温度的关系
图12. Eoss 与漏极－源极电压的关系
6
12
5
4
3
2
1
0
10
8
6
4
2
0
0
100
200
300
400
500
600
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
© 2012 飞兆半导体公司
4
FCP380N60E / FCPF380N60E Rev. C8
典型性能特征（接上页）
图13. 瞬态热响应曲线(FCP380N60E)
2
1
0.5
PDM
0.2
t1
0.1
t2
*Notes:
0.05
1. ZJC(t) = 1.18oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.02
0.1 0.01
Single pulse
0.05
10-5
10-4
10-3
10-2
10-1
1
t1，矩形脉冲持续时间[ 秒]
图14. 瞬态热响应曲线(FCPF380N60E)
5
0.5
0.2
1
0.1
PDM
0.05
t1
t2
0.02
0.01
Single pulse
*Notes:
1. ZJC(t) = 4oC/W Max.
0.1
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.05
10-5
10-4
10-3
10-2
10-1
1
10
100
t1，矩形脉冲持续时间[ 秒]
www.fairchildsemi.com
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
5
I
= 常量
G
图15. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图16. 阻性开关测试电路与波形
VGS
图17. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
© 2012 飞兆半导体公司
6
FCP380N60E / FCPF380N60E Rev. C8
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图18. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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Board Connector, 40 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Locking, Gray Insulator
ADAM-TECH
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