FCPF190N60E-F154 [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead;
| 型号： | FCPF190N60E-F154 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead |
| 文件： | 总10页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – N-Channel,
SUPERFET) II
600 V, 20.6 A, 190 mW
FCPF190N60E-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
www.onsemi.com
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
190 mW @ 10 V
20.6 A
D
Features
• 650 V @ T = 150°C
J
• Typ. R
= 160 mW
DS(on)
G
• Ultra Low Gate Charge (Typ. Q = 63 nC)
g
• Low Effective Output Capacitance (Typ. C .eff = 178 pF)
oss
S
• 100% Avalanche Tested
MOSFET
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
G
D
S
• Lighting / Charger / Adapter
TO−220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
190N60E
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCPF190N60E
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
FCPF190N60E−F154/D
December, 2020 − Rev. 0
FCPF190N60E−F154
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
600
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
20
V
− AC (f > 1 Hz)
30
I
Drain Current
− Continuous (T = 25°C)
20.6*
13.1*
61.8*
400
A
D
C
− Continuous (T = 100°C)
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
MOSFET dv/dt
AS
AS
I
4.0
E
AR
2.1
mJ
V/ns
dv/dt
20
100
P
Power Dissipation
(T = 25°C)
39
W
W/°C
°C
D
C
− Derate Above 25°C
0.31
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering Purpose,
1/8″ from Case for 5 Seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 4 A, V = 50 V, R = 25 W, starting T = 25°C.
AS
DD
G
J
3. I ≤ 10 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.2
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
_C/W
q
JC
JA
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
50 Units / Tube
FCPF190N60E−F154
FCPF190N60E
TO−220F
(Pb−Free)
www.onsemi.com
2
FCPF190N60E−F154
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
600
650
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 10 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
0.67
V/_C
DSS
J
D
BV
Drain−Source Avalanche Breakdown
Voltage
V
GS
= 0 V, I = 20 A
−
700
−
V
DS
D
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
DS
V
DS
V
GS
= 480 V, V = 0 V
−
−
−
−
−
−
1.0
10
mA
DSS
GS
= 480 V, T = 125_C
C
I
=
20 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 mA
2.5
−
−
3.5
0.19
−
V
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 10 A
0.16
20
D
g
FS
= 20 V, I = 10 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
2385
1795
110
42
3175
2396
165
−
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Output Capacitance
rss
C
V
DS
V
DS
V
DS
= 380 V, V = 0 V, f = 1 MHz
GS
oss
C
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 480 V, V = 0 V
178
63
−
oss (eff.)
GS
Q
= 380 V, I = 10 A, V = 10 V
82
−
g(tot)
D
GS
(Note 4)
Q
10
gs
Q
24
−
gd
ESR
f = 1 MHz
5
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 380 V, I = 10 A, V = 10 V,
−
−
−
−
23
14
56
38
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
101
15
212
40
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
20.2
60.6
1.2
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 10 A
−
V
GS
SD
t
rr
= 400 V, I = 10 A,
308
4.8
ns
mC
DD
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FCPF190N60E−F154
TYPICAL PERFORMANCE CHARACTERISTICS
50
10
100
V
GS
=15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
= 20 V
DS
250 ms Pulse Test
150°C
10
25°C
1
−55°C
250 ms Pulse Test
= 25°C
T
C
1
0.3
0.1
1
10
2
3
V
4
5
6
7
8
V
DS
, Drain−Source Voltage (V)
, Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
10
1
0.4
0.3
0.2
0.1
T
C
= 25°C
V
= 0 V
GS
250 ms Pulse Test
150°C
25°C
V
= 10 V
GS
V
= 20 V
GS
0
10
20
30
40
50
60
0.2
0.4
SD
0.6 0.8 1.0
, Body Diode Forward Voltage (V)
1.2
1.4 1.6
V
I , Drain Current (A)
D
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10
10000
C
iss
V
DS
V
DS
V
DS
= 120 V
= 300 V
= 480 V
8
6
4
2
0
1000
100
10
C
oss
C
V
= 0 V
rss
GS
f = 1 MHz
C
C
C
= C + C (C = shorted)
iss
gs gd ds
= C + C
ds
oss
rss
gd
= C
1
0.5
gd
I
= 10 A
56
D
0.1
1
10
100
600
0
14
28
42
70
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCPF190N60E−F154
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
= 0 V
= 10 mA
V
= 10 V
GS
GS
I
D
I = 10 A
D
2.5
2.0
1.5
1.0
0.5
0.0
−80
−40
40
80
120
160
0
−80
−40
40
80
120
160
0
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
100
25
20
15
10
5
10 ms
10
1
100 ms
1 ms
Operation in this Area
is Limited by R
10 ms
DC
DS(on)
0.1
T
C
= 25°C
T = 150°C
J
Single Pulse
0
0.01
150
0.1
1
10
100
1000
25
50
75
100
125
V
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
0
100
200
300
400
500
600
V
DS
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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5
FCPF190N60E−F154
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
5
1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.1
t2
Single Pulse
Z
(t) = 3.2°C/W Max.
q
JC
Duty Factor, D = t / t
1
2
T
JM
− T = P
x Z (t)
q
C
DM
JC
0.01
10−5
10−4
10−3
10−2
10−1
1
10
100
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
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6
FCPF190N60E−F154
V
GS
R
Q
g
L
10 V
V
DS
Q
Q
gd
gs
V
GS
DUT
1 mA
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
10 V
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I
D
(t)
DUT
V
DD
10 V
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCPF190N60E−F154
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
8
FCPF190N60E−F154
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221BN
ISSUE O
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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