FCPF2250N80Z [ONSEMI]
N 沟道 SuperFET® II MOSFET 800 V, 2.6 A, 2.25 Ω;
| 型号： | FCPF2250N80Z |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® II MOSFET 800 V, 2.6 A, 2.25 Ω 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年 8 月
FCPF2250N80Z
®
N- 沟道 SuperFET II MOSFET
800 V, 3.5 A, 2.25 Ω
特性
描述
SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低
导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET
系列产品。这项技术专用于最小化导通损耗并提供卓越的开关性
能、dv/dt 额定值和更高雪崩能量。因此，SuperFET II MOSFET
非常适合开关电源应用，如音频、笔记本电源适配器、照明、ATX
电源及工业电源应用。
•
•
•
•
•
•
•
RDS(on) = 1.8 Ω (Typ.)
超低栅极电荷 （典型值 Qg = 11 nC)
低 Eoss （典型值 1.1 uJ @ 400 V)
低有效输出电容 （典型值 Coss(eff.)= 51 pF）
100% 经过雪崩测试
符合 RoHS 标准
增强的 ESD 能力
应用
•
•
AC-DC 电源
LED 照明
D
G
G
D
S
TO-220F
S
最大绝对额定值 TC = 25°C 除非另有说明。
FCPF2250N80Z
符号
参数
单位
VDSS
VGSS
800
±20
V
漏极－源极电压
栅极－源极电压
- DC
V
A
- AC
(f > 1 Hz)
±30
3.5*
- 连续 (TC = 25°C)
- 连续 (TC = 100°C)
- 脉冲
ID
漏极电流
2.2*
IDM
EAS
IAR
6.5*
A
mJ
A
漏极电流
（注 1）
（注 2）
（注 1）
（注 1）
21.6
0.52
0.22
100
单脉冲雪崩能量
雪崩电流
EAR
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
20
二极管恢复 dv/dt 峰值
（注 3）
(TC = 25°C)
21.9
0.18
-55 to +150
300
Ω
W/°C
°C
功耗
- 高于 25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
°C
用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒
* 漏极电流由最高结温的限制，与散热片
热性能
FCPF2250N80Z
符号
参数
单位
RθJC
RθJA
5.7
结至外壳热阻最大值
结至环境热阻最大值
oC/W
62.5
www.fairchildsemi.com
1
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
封装标识与定购信息
器件编号
顶标
FCPF2250N80Z
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FCPF2250N80Z
TO-220F
不适用
50 个
电气特性 TC = 25C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
VGS = 0 V, ID = 1 mA, TJ = 25°C
800
-
-
-
-
V
漏极－源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
0.85
V/°C
ID=1 mA，参考 25°C 数值
V
DS = 800 V, VGS = 0 V
-
-
-
-
-
-
25
IDSS
IGSS
μA
μA
零栅极电压漏极电流
栅极－体漏电流
VDS = 640 V, VGS = 0 V,TC = 125°C
VGS = ±20 V, VDS = 0 V
250
±10
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 0.26 mA
VGS = 10 V, ID = 1.3 A
VDS = 20 V, ID = 1.3 A
2.5
-
4.5
2.25
-
V
Ω
S
栅极阈值电压
-
-
1.8
2.28
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
440
16
585
pF
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
22
-
输出电容
Crss
0.75
8.4
51
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V 至 480 V, VGS = 0 V
VDS = 640 V, ID = 2.6 A,
-
Coss(eff.)
Qg(tot)
Qgs
-
有效输出电容
10 V 的栅极电荷总量
栅极－源极栅极电荷
栅极－漏极 “ 米勒 ” 电荷
等效串联电阻
11
14
-
2.2
4.3
2.8
V
GS = 10 V
（注 4）
Qgd
-
ESR
f = 1 MHz
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
11
6.7
26
32
23
62
27
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 400 V, ID = 2.6 A,
VGS = 10 V, Rg = 4.7 Ω
8.7
（注 4）
漏极－源极二极管特性
IS
-
-
-
-
-
-
-
3.5
6.5
1.2
-
A
A
漏极－源极二极管最大正向连续电流
漏极－源极二极管最大正向脉冲电流
漏极－源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 2.6 A
-
V
260
2.2
ns
μC
VGS = 0 V, ISD = 2.6 A,
dIF/dt = 100 A/μs
Qrr
注：
-
反向恢复电荷
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 0.52 A, R = 25 Ω, starting T = 25°C
AS
G
J
3. I 3.5 A, di/dt 200 A/μs, V BV
, 开始于 T = 25°C
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
2
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
10
10
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
2. 250s Pulse Test
150oC
1
1
-55oC
25oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.1
0.1
2
3
4
5
6
7
1
10
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压的关系
图 4. 体二极管正向电压变化与源极电流的关系
和温度的关系
100
3.6
*Note: TC = 25oC
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
3.0
25oC
1
2.4
VGS = 10V
150oC
0.1
1.8
VGS = 20V
0.01
1.2
0.0
0.3
0.6
0.9
1.2
1.5
0.0
1.2
2.4
3.6
4.8
6.0
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图 5. 电容特性
图 6. 栅极电荷特性
10000
10
*Note: ID = 2.6A
VDS = 160V
VDS = 400V
1000
100
10
8
Ciss
VDS = 640V
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
1
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
Crss
oss
rss
= C
gd
0.1
0.1
0
3
6
9
12
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
3
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
典型性能特征 （接上页）
图 7. 击穿电压变化与温度的关系
1.2
图 8. 导通电阻变化与温度的关系
3.0
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 1.3A
2.4
2. ID = 1mA
1.1
1.8
1.2
0.6
0.0
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳温的关系
10
3.5
10s
100us
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
1ms
Operation in This Area
is Limited by R DS(on)
10ms
DC
0.1
TC = 25oC
TJ = 150oC
SINGLE PULSE
0.01
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图 11. Eoss 与漏源极电压的关系
3.0
2.4
1.8
1.2
0.6
0
0
160
320
480
640
800
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
4
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
典型性能特征 （接上页）
图 12. 瞬态热响应曲线
10
1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.1
*Notes:
1. ZJC(t) = 5.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
www.fairchildsemi.com
5
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
I = 常量
G
图 13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 14. 阻性开关测试电路与波形
VGS
图 15. 非箝位电感开关测试电路与波形
www.fairchildsemi.com
6
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 16. 二极管恢复 dv/dt 峰值测试电路与波形
www.fairchildsemi.com
7
© 2014 飞兆半导体公司
FCPF2250N80ZRev. 1.1
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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