FCPF360N65S3R0L [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，TO-220F;
| 型号： | FCPF360N65S3R0L |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，TO-220F |
| 文件： | 总10页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCPF360N65S3R0L
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 10 A, 360 mW
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
360 mW @ 10 V
10 A
D
Features
• 700 V @ T = 150°C
J
• Typ. R
= 310 mW
DS(on)
G
• Ultra Low Gate Charge (Typ. Q = 18 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
= 173 pF)
oss(eff.)
S
N-Channel MOSFET
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
G
D
S
TO−220F
CASE 340BF
• Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCPF360
N65S3R0
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCPF360N65S3R0 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019 − Rev. 3
FCPF360N65S3R0L/D
FCPF360N65S3R0L
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
10*
A
C
Continuous (T = 100°C)
6*
C
I
Drain Current
Pulsed (Note 1)
25*
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
40
AS
AS
I
2.1
E
0.27
100
20
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
27
W
W/°C
°C
D
Derate Above 25°C
0.22
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 2.1 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
4.56
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
50 Units
FCPF360N65S3R0L
FCPF360N65S3R0
TO−220F
Tube
N/A
N/A
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2
FCPF360N65S3R0L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.68
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
0.58
−
1
mA
DSS
GS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.2 mA
2.5
−
−
310
6
4.5
360
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 5 A
D
g
FS
= 20 V, I = 5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
730
15
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
173
26
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 5 A, V = 10 V
18
g(tot)
D
GS
(Note 4)
Q
4.3
7.6
1
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 5 A,
−
−
−
−
12
11
34
10
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
10
25
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 5 A
1.2
SD
t
Reverse Recovery Time
V
= 0 V, I = 5 A,
−
−
241
2.4
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCPF360N65S3R0L
TYPICAL PERFORMANCE CHARACTERISTICS
50
10
50
VGS
=
10.0V
*Notes:
1. V = 20V
8.0V
7.0V
6.5V
6.0V
5.5V
DS
2. 250 ms Pulse Test
10
1
150oC
25oC
1
−55oC
*Notes:
1. 250 ms Pulse Test
2. TC = 25oC
0.1
0.1
0.2
1
10
20
2
3
4
5
6
7
8
VDS, Drain−Source Voltage[V]
VGS, Gate−Source Voltage[V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
10
1
*Note: TC = 25oC
*Notes:
1. VGS = 0V
2. 250 ms Pulse Test
150oC
25oC
V
GS = 10V
0.1
VGS = 20V
o
−55 C
0.01
0.001
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
100000
*Note: ID = 5A
10000
1000
100
8
V
DS = 130V
Ciss
VDS = 400V
6
4
2
0
Coss
*Note:
1. V = 0V
GS
10
2. f = 1MHz
C
C
C
= C
+ C (C = shorted)
gs gd ds
iss
Crss
1
= C
+ C
oss
rss
ds
gd
gd
= C
0.1
0.1
0
5
10
15
20
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain−Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCPF360N65S3R0L
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3.0
1.2
1.1
1.0
0.9
0.8
*Notes:
1. V = 10V
*Notes:
1. V = 0V
GS
GS
2.5
2.0
1.5
1.0
0.5
0.0
2. ID= 5A
2. ID= 10mA
−50
0
50
100
150
−50
0
50
100
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
12
10
8
100
10
30ms
100ms
1ms
10ms
6
1
Operation in This Area
is Limited by R
DC
DS(on)
4
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.1
0.01
2
0
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain−Source Voltage [V]
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
5
4
3
2
1
0
0
130
260
390
520
650
VDS, Drain to Source Voltage [V]
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCPF360N65S3R0L
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
0.1
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
R
= 4.56 C/W
qJC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
J
DM
qJC C
SINGLE PULSE
10−4
1
2
0.001
10−5
10−3
10−2
10−1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
FCPF360N65S3R0L
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCPF360N65S3R0L
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
Sdv/dt controlled by R G
SI SD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
( Driver )
D =
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recoverydv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK 3LD
CASE 340BF
ISSUE O
DATE 31 AUG 2016
10.30
A
9.80
2.90
2.50
3.40
3.00
6.60
6.20
3.00
2.60
1 X 45°
19.00
B
15.70
17.70
B
15.00
3.30
2.70
B
3
1
2.70
2.30
2.14
1.20
0.90
(2X)
10.70
10.30
0.60
0.40
B
0.90
(3X)
0.50
1.20
M
A
1.00
0.50
NOTES:
2.74
(2X)
2.34
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.60
4.30
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13839G
TO−220 FULLPAK 3LD
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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