FDA24N40F [ONSEMI]
功率 MOSFET,N 沟道,UniFETTM,FRFET®,400V,23A,190mΩ,TO-3P;型号: | FDA24N40F |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,UniFETTM,FRFET®,400V,23A,190mΩ,TO-3P 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:1522K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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May 2014
FDA24N40F
N-Channel UniFET FRFET MOSFET
400 V, 23 A, 190 mΩ
TM
®
Features
Description
•
•
•
•
•
RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A
Low Gate Charge (Typ. 46 nC)
Low Crss (Typ. 25 pF)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
100% Avalanche Tested
RoHS Compliant
Applications
•
Uninterruptible Power Supply
•
AC-DC Power Supply
D
G
G
D
TO-3PN
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDA24N40F
400
Unit
V
Drain to Source Voltage
Gate to Source Voltage
±30
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
23
ID
Drain Current
A
13.8
92
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
1190
23
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
23.5
4.5
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
235
PD
Power Dissipation
1.8
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
Thermal Characteristics
Symbol
Parameter
FDA24N40F
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.53
40
oC/W
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDA24N40F
TO-3PN
Tube
N/A
N/A
30 units
FDA24N40F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TJ = 25oC
D = 250 μA, Referenced to 25oC
DS = 400 V, VGS = 0 V
400
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.5
V/oC
V
-
-
-
-
-
-
10
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 320 V, TC = 125oC
100
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 11.5 A
VDS = 20 V, ID = 11.5 A
3.0
-
5.0
0.19
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.15
29
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
2280
370
25
3030
490
38
60
-
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
46
V
V
DS = 320 V, ID = 23 A,
GS = 10 V
13
(Note 4)
Qgd
18
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
40
92
90
ns
ns
ns
ns
195
250
160
VDS = 200 V, ID = 23 A,
GS = 10 V, RG = 25 Ω
V
120
75
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
23
92
1.5
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 23 A
-
V
110
0.3
ns
μC
V
GS = 0 V, ISD = 23 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
o
2: L = 4.5 mH, I = 23 A, V = 50 V, R = 25 Ω, starting T = 25 C.
AS
DD
G
J
3:
I
≤ 23 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4: Essentially independent of operating temperature typical characteristics.
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©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
70
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
150oC
10
25oC
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.1
0.02
1
0.1
1
10
4
5
6
7
8
15
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
0.36
0.32
0.28
0.24
0.20
0.16
0.12
200
100
150oC
25oC
VGS = 10V
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
2. 250μs Pulse Test
1
0.0
0
20
40
60
80
0.4
0.8
1.2
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
VDS = 200V
VDS = 320V
= C + C
ds gd
= C
gd
oss
rss
Coss
4000
3000
2000
1000
0
8
*Note:
1. VGS = 0V
2. f = 1MHz
6
4
2
Ciss
Crss
*Note: ID = 23A
0
30
0.1
1
10
0
10
20
30
40
50
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. Maximum Safe Operating Area
vs. Temperature
1.2
200
100
30μs
100μs
1ms
1.1
1.0
10
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.9
0.1
*Notes:
1. VGS = 0V
2. ID = 250μA
3. Single Pulse
100
VDS, Drain-Source Voltage [V]
0.8
-100
0.01
-50
0
50
100
150
200
1
10
800
TJ, Junction Temperature [oC]
Figure 9. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
1E-3
*Notes:
1. ZθJC(t) = 0.53oC/W Max.
2. Duty Factor, D= t1/t2
Single pulse
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
101
102
t , Rectangular Pulse Duration [sec]
1
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©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
4
I
= const.
G
Figure 11. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 12. Resistive Switching Test Circuit & Waveforms
VGS
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
6
Mechanical Dimensions
Figure 15. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
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©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
7
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AccuPower™
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F-PFS™
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®*
®
®
®
tm
®
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QS™
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™
®
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®
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®
Green FPS™ e-Series™
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GTO™
®
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Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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®
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®
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®
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I68
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©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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