FDB12N50FTM-WS [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，11.5 A，700 mΩ，D2PAK;
| 型号： | FDB12N50FTM-WS |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，11.5 A，700 mΩ，D2PAK |
| 文件： | 总9页 (文件大小：841K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB12N50F
TM
®
N-Channel UniFET FRFET MOSFET
500 V, 11.5 A, 700 m
Description
Features
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
•
•
•
•
•
•
RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A
Low Gate Charge (Typ. 21 nC)
Low Crss (Typ. 11 pF)
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
100% Avalanche Tested
Improve dv/dt Capability
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
RoHS Compliant
Applications
•
•
•
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
G
D2-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
Parameter
FDB12N50FTM-WS
Unit
V
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pu ls ed
11.5
6.9
ID
D r a in C u r r e n t
A
IDM
Dr ain Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
456
11.5
16.5
20
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
165
PD
Power Dissipation
1.33
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
FQB12N50FTM_WS
Unit
RJC
0.75
62.5
40
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
oC/W
RJA
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FDB12N50F/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB12N50F
FDB12N50FTM_WS
D2-PAK
330mm
24mm
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TJ = 25oC
500
-
-
-
-
V
BVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25oC
0.5
V/oC
/
TJ
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
10
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
VDS = 400V, TC = 125oC
100
IGSS
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 6A
VDS = 40V, ID = 6A
3.0
-
5.0
0.7
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.59
12
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
1050
135
11
1395
180
17
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
21
30
V
DS = 400V, ID = 11.5A
6
-
VGS = 10V
Qgd
Gate to Drain “Miller” Charge
-
9
-
nC
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
21
45
50
35
50
100
110
80
ns
ns
ns
ns
VDD = 250V, ID = 11.5A
RG = 25
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
11.5
46
1.5
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 11.5A
-
V
134
0.37
ns
C
V
GS = 0V, ISD = 11.5A
dIF/dt = 100A/s
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, I = 11.5A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 11.5A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
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2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
30
VGS = 10.0 V
8.0 V
7.0 V
10
6.5 V
6.0 V
5.5 V
10
1
150oC
25oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
* Notes :
1. VDS = 20V
0.1
2. 250s Pulse Test
0.05
0.1
1
20
1
10
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.9
100
0.8
150oC
25oC
0.7
10
VGS = 10V
VGS = 20V
0.6
Notes:
1. VGS = 0V
* Note : TJ = 25oC
12
ID, Drain Current [A]
2. 250s Pulse Test
0.5
1
0.0
0
6
18
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
2000
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
VDS = 250V
= C + C
ds gd
Coss
oss
rss
= C
gd
VDS = 400V
8
6
4
2
0
1500
1000
500
0
* Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Crss
* Note : ID = 11.5A
16 20 24
0
4
8
12
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
100
1.2
1.1
1.0
20s
100s
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
0.9
1. TC = 25oC
2. TJ = 150oC
* Notes :
1. VGS = 0V
2. ID = 250A
3. Single Pulse
0.01
0.8
-100
1
10
100
1000
-50
0
50
100
150
200
o
VDS, Drain-Source Voltage [V]
TJ, Junction Temperature [ C]
Figure 9. Maximum Drain Current
vs. Case Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
Figure 10. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
0.05
PDM
0.02
t1
0.01
t2
0.01
*Notes:
Single pulse
1. ZJC(t) = 0.75oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
1
10
t1, Square Wave Pulse Duration [sec]
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4
Figure 11. Gate Charge Test Circuit & Waveform
I
= const.
G
Figure 12. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
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5
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 15. 2LD,TO263, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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