FDB38N30U [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，300 V，38A，120 mΩ，D2PAK;
| 型号： | FDB38N30U |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，300 V，38A，120 mΩ，D2PAK |
| 文件： | 总10页 (文件大小：662K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
FDB38N30U
N-Channel UniFET Ultra FRFET MOSFET
300 V, 38 A, 120 mΩ
TM
TM
Features
Description
•
•
•
•
•
RDS(on) = 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A
Low Gate Charge (Typ. 56 nC)
Low Crss (Typ. 55 pF)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
100% Avalanche Tested
RoHS Compliant
Applications
•
•
•
Uninterruptible Power Supply
LCD/LED/PDP TV
AC-DC Power Supply
D
D
G
G
S
D2-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDB38N30U
Unit
V
Drain to Source Voltage
Gate to Source Voltage
300
±30
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- P u l s e d
38
ID
D r a in C u r r e n t
A
22.8
152
IDM
D r a i n C u r r e n t
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
722
38
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
31.3
20
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
313
PD
Power Dissipation
2.5
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
Thermal Characteristics
Symbol
Parameter
FDB38N30U
0.4
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
oC/W
62.5
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
D2-PAK
Packing Method
Reel Size
Tape Width
Quantity
FDB38N30U
FDB38N30U
Tape and Reel
330 mm
24 mm
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TJ = 25oC
D = 250 μA, Referenced to 25oC
DS = 300 V, VGS = 0 V
300
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.33
V/oC
V
-
-
-
-
-
-
25
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 240 V, TC = 125oC
250
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 19 A
VDS = 20 V, ID = 19 A
3.0
-
5.0
0.120
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.103
30
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
2510
470
55
3340
625
85
73
-
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
56
V
V
DS = 240 V, ID = 38 A
GS = 10 V
14
(Note 4)
Qgd
24
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
33
80
76
ns
ns
ns
ns
VDD = 150 V, ID = 38 A,
GS = 10 V, RG = 25 Ω
170
276
134
V
133
62
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
38
152
1.4
-
A
A
ISM
VSD
trr
-
-
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 38 A
V
60
ns
μC
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
0.097
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 1 mH, I = 38 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3:
I
≤ 38 A, di/dt ≤ 200 A/μs, V ≤ BV , starting T = 25°C.
DSS J
SD
DD
4: Essentially Independent of Operating Temperature Typical Characteristics.
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
200
VGS = 15.0V
*Notes:
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1. VDS = 20V
100
2. 250μs Pulse Test
10
1
150oC
25oC
10
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1
0.1
1
1
10
20
2
3
4
5
6
7
8
9
10
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
0.26
0.24
200
100
150oC
0.20
0.16
0.12
0.08
25oC
10
VGS = 10V
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
1
0.0
0
20
40
60
80
100
0.4
0.8
1.2
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
Ciss
VDS = 60V
DS = 150V
DS = 240V
8
V
V
1000
6
4
2
0
Coss
*Note:
1. VGS = 0V
100
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 38A
40 50 60
10
0.1
1
10
30
0
10
20
30
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
300
1.2
1.1
1.0
30μs
100
100μs
1ms
10
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
3. Single Pulse
0.1
0.8
-80
1
10
100
500
-40
0
40
80
120
160
TJ, Junction Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
Figure 10. Unclamped Inductive
Switching Capability
vs. Case Temperature
40
100
VGS = 10V
30
20
10
0
TJ = 25 oC
10
TJ = 125 o
C
RθJC = 0.4oC/W
50
1
25
75
100
125
150
0.001
0.01
0.1
1
10
100
TC, Case Temperature [oC]
tAV, TIME IN AVALANCHE (ms)
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
1E-3
*Notes:
1. ZθJC(t) = 0.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
10-5
10-4
10-3
10-2
10-1
1
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
4
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
6
Mechanical Dimensions
2
Figure 16. TO263 (D PAK), Molded, 2-Lead, Surface Mount
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
7
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Rev. I66
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©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C1
8
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