FDC021N30 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，6.1A，26 mΩ;
| 型号： | FDC021N30 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，6.1A，26 mΩ |
| 文件： | 总10页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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June 2016
FDC021N30
N-Channel PowerTrench® MOSFET
30 V, 6.1 A, 26 mΩ
Features
General Description
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
This N-Channel PowerTrench MOSFET is produced using
Fairchild’s advanced PowerTrench® process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.3 A
High Performance Trench Technology for Extremely Low
rDS(on)
Applications
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
Load Switch
Fast Switching Speed
RoHS Compliant
Battery Protection
Power Management
D
D
D
D
S
G
MOSFET Maximum Ratings TA= 25°C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
(Note 3)
(Note 1a)
(Note 4)
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
TA = 25°C
6.1
ID
A
62
( Note 1a)
(Note 1b)
1.6
PD
W
0.7
TJ, TSTG
-55 to + 150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
°C/W
°C/W
175
Package Marking and Ordering Information
Device Marking
Device
Package
SSOT-6TM
Reel Size
7 ’’
Tape Width
8 mm
Quantity
21N
FDC021N30
3000 units
1
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25°C
16
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
1
μA
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
1.8
-5
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25°C
VGS = 10 V, ID = 6.1 A
GS = 4.5 V, ID = 5.3 A
mV/°C
19
23
26
33
V
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10 V, ID = 6.1 A,
TJ = 125°C
26
30
37
gFS
VDS = 5 V, ID = 6.1 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
510
170
22
710
240
30
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
1.3
2.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
12
10
ns
ns
2
VDD = 15 V, ID = 6.1 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
13
2
24
ns
10
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
7.7
3.7
1.4
1.1
10.8
5.2
nC
nC
nC
nC
VDD = 15 V,
ID=6.1A
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 6.1 A
(Note 2)
0.8
14
3
1.2
25
10
V
ns
nC
IF = 6.1 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
a. 78 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
2
Typical Characteristics TJ = 25 °C unless otherwise noted.
35
8
6
4
2
0
VGS = 10 V
PULSE DURATION = 80 μs
VGS = 4.5 V
VGS = 4 V
30
25
20
15
10
5
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 3.5 V
VGS = 3.5 V
VGS = 4 V
VGS = 3 V
PULSE DURATION = 80 μs
VGS = 10 V
28
VGS = 4.5 V
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
7
14
21
35
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.5
150
ID = 6.1 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
ID = 6.1 A
100
50
0
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
35
40
VGS = 0 V
PULSE DURATION = 80 μs
10
DUTY CYCLE = 0.5% MAX
28
VDS = 5 V
TJ = 150 o
C
1
21
TJ = 25 o
C
TJ = 150 o
C
0.1
14
7
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
0
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
1000
100
10
ID = 6.1 A
8
Ciss
VDD = 15 V
6
Coss
VDD = 10 V
VDD = 20 V
4
2
0
f = 1 MHz
GS = 0 V
V
Crss
0
2
4
6
8
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
5
4
3
2
1
0
20
10
VGS = 10 V
TJ = 25 o
C
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
RθJA = 175 oC/W
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continous Drain Current
vs. Ambient Temperature
10000
100
10
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
RθJA = 175 oC/W
10 μs
1000
T
A = 25 oC
100
10
1
100 μs
1
1 ms
10 ms
100 ms
1 s
SINGLE PULSE
0.1
0.01
T
J = MAX RATED
θJA = 175 oC/W
A = 25 o
R
10 s
DC
CURVE BENT TO
MEASURED DATA
T
C
0.1
10-5 10-4 10-3 10-2 10-1
1
10
100 1000
0.01
0.1
1
10
100200
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
0.001
0.0001
θJA
θJA
SINGLE PULSE
o
R
= 175 C/W
θJA
Peak T = P
x Z (t) + T
J
DM
θJA A
Duty Cycle, D = t / t
1
2
10-5
10-4
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
5
Dimensional Outline and Pad Layout
SYMM
C
L
0.95
0.95
3.00
A
2.80
1.00 MIN
6
4
B
3.00
2.60
2.60
1.70
1.50
1
3
0.50
0.30
0.95
0.70 MIN
M
0.20
A B
1.90
LAND PATTERN RECOMMENDATION
(0.30)
1.10 MAX
SEE DETAIL A
1.00
0.70
C
0.10
0.10
0.00
0.20
0.08
C
GAGE PLANE
0.25
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE C, DATED JANUARY 2000.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M - 2009.
D) DRAWING FILE NAME: MKT-MA06AREV5
0.55
0.35
SEATING PLANE
0.60 REF
DETAIL A
SCALE: 50X
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, spe-
cifically the warranty therein, which covers Fairchild products.
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™
F-PFS™
FRFET
OPTOPLANAR
®*
®
AttitudeEngine™
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
tm
Awinda
®
TinyBoost
TinyBuck
®
AX-CAP *
Power Supply WebDesigner™
®
®
BitSiC™
PowerTrench
TinyCalc™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
PowerXS™
®
TinyLogic
Programmable Active Droop™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
QFET
QS™
Quiet Series™
Current Transfer Logic™
Marking Small Speakers Sound Louder RapidConfigure™
TranSiC™
®
DEUXPEED
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
™
TriFault Detect™
TRUECURRENT *
Dual Cool™
®
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
μSerDes™
EfficentMax™
ESBC™
MicroPak™
SmartMax™
MicroPak2™
MillerDrive™
MotionMax™
SMART START™
®
®
Solutions for Your Success™
UHC
®
®
SPM
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild
®
®
MotionGrid
STEALTH™
Fairchild Semiconductor
FACT Quiet Series™
®
®
MTi
SuperFET
®
®
MTx
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FACT
®
MVN
FastvCore™
FETBench™
FPS™
®
mWSaver
®
OptoHiT™
OPTOLOGIC
SupreMOS
Xsens™
®
®
SyncFET™
仙童
Sync-Lock™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I77
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7
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
SYMM
C
L
0.95
0.95
C
3.00
2.80
A
1.00 MIN
6
4
B
3.00
2.60
2.60
1.70
1.50
C
1
3
0.50
0.30
0.95
0.70 MIN
M
0.20
A B
1.90
LAND PATTERN RECOMMENDATION
SEE DETAIL A
(0.30)
1.10 MAX
H
1.00
0.70
C
0.10
0.20
0.08
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
C
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
GAGE PLANE
0.25
8°
0°
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING FILE NAME: MKT-MA06AREVF
0.55
0.35
SEATING PLANE
0.60 REF
DETAIL A
SCALE: 50X
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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